IR3F diode
Abstract: No abstract text available
Text: Bulletin PD-20517 rev. H 07/04 15MQ040N SCHOTTKY RECTIFIER 3 Amp IF AV = 3 Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics IF DC 15MQ040N Units 3 A VRRM 40 V IFSM @ tp = 5 µs sine 330 A VF @ 2Apk, TJ=125°C 0.43 V TJ
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PD-20517
15MQ040N
15MQ040N
08-Mar-07
IR3F diode
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IR3F
Abstract: IR3F diode DIODE IR3f Diode SMA marking code PD MARKING IR3F ir3f pd 15MQ040N_SMA 15MQ040N AN-994 diode SMA marking 14
Text: Bulletin PD-20517 rev. H 07/04 15MQ040N SCHOTTKY RECTIFIER 3 Amp IF AV = 3 Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics IF DC 15MQ040N Units 3 A VRRM 40 V IFSM @ tp = 5 µs sine 330 A VF @ 2Apk, TJ=125°C 0.43 V TJ
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Original
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PD-20517
15MQ040N
15MQ040N
IR3F
IR3F diode
DIODE IR3f
Diode SMA marking code PD
MARKING IR3F
ir3f pd
15MQ040N_SMA
AN-994
diode SMA marking 14
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S74B
Abstract: NP5J TRANSISTOR MARKING YB 2SC3065 2SC306 LN 2003a
Text: SANYO SEMICONDUCTOR CORP 3S E D ? cic]7D7t DDGflflm 1 wa .T-Z9-27 NPN Epitaxial Planar Silicon Composite Transistor 2 029A Differential Amp Applications S74B Applications . Differential amp, current mirror. . Features . Excellent in thermal equilibrium differential amp.
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T-91-20
SC-43
S74B
NP5J
TRANSISTOR MARKING YB
2SC3065
2SC306
LN 2003a
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204292
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 2 L0C , 19 ALL RIGHTS RESERVED. DIST REVISIONS DF CO LTR L 2 /r . . // . DRAWN PER 0600-4098-95 DUN APVD 77 DBM 09-95 PARTS TO BE ASSEMBLED BY AMP INC. AMP, PART NUMBER AND DATE CODE
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2SA1237
Abstract: 9571 transistor Pc 9571
Text: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp
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e17G7b
T-91-20
SC-43
2SA1237
9571 transistor
Pc 9571
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yg 2025
Abstract: transistor bc 930 2SA929 2SA930 2SC1570
Text: SANYO SEMICONDUCTOR CORP 32E D • TTTTOTb OOOflöaO 4 B T -2 7 - / S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications The 2SA929, 930 are transistors for very low noise AF amp. They are especially suited for use in the first stage of equalizer amp. in high-grade stereo sets.
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T-27-15
2SA929,
2SC1570.
T-91-20
SC-43
yg 2025
transistor bc 930
2SA929
2SA930
2SC1570
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2SK332
Abstract: TRANSISTOR IFW 2027A 100S 956c
Text: — • * i . wi u u uuuu i J D fcfad T-27-27 Ì- * - ' - 3 k L, _r \ ‘r^VeV; ytrj* ' N -C h an n el Junction Silicon C om posite FET 2027A Differential Amp Applications 956C Features • Excellent in thermal equilibrium and especially suited fo r first-stage differential amp o f D C amp
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T-91-20
SC-43
2SK332
TRANSISTOR IFW
2027A
100S
956c
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2SK332
Abstract: Scans-00159775 DS-17 SANYO
Text: — '•' r~'J-, Ì-*- ' - • < 1 1 U 1u uuuuu I J p T-27-27 VflYaTV k L,_r 3 \ ‘r^VeV; ytrj* btffl ' N -C h an n e l Junction Silico n Com posite FE T 2027A Differential Amp Applications 956C Features • Excellent in thermal equilibrium and especially suited for first-stage differential amp of DC amp
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T-27-27
T-91-20
SC-43
2SK332
Scans-00159775
DS-17 SANYO
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stahl
Abstract: 204209-1 din 41618 3C87-5 3c87
Text: AM AMP “M”-Serie AMP “M ”-Series | | ] i i j I ! “ M”-Serie-Produkte haben ihre unLibertroffene Zuverlassigkeit und Preiswurdigkeit in kommerziellen und militarischen Anwendungen seit vielen Jahren bewiesen. “ M”Serie Steckverbinder werden in
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Untitled
Abstract: No abstract text available
Text: AM P AMP HD-20 AMP HD-20 HDM-20 Militar Steckverbinder HDM-20 Military Connectors Stiftstecker Male Connector i i | Technische Daten Technical Features ! Gehause: Stahl, verzinkt/gelb chromatiert \ Shell: j Steel, yellow chromed version Isolierkorper: Diallyl Phthalat
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HD-20
HDM-20
HDM-20
24308mm
M81969/1-02
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la 1201 sanyo
Abstract: IS-313D 2SB1273 QDQ4127 b1251 n1cj EIAJ CP 301 30H150
Text: SANYO SEMICONDUCTOR CORP la E t I 71=170?t QD04127 3 P T'-33-!c 2SB1273 PNP Epitaxial Planar Silicon Transistor 2010A Low Frequency Power Amp Applications 2332 Applications . Power amp Features . Wide ASO adoption of MBIT process) . Low saturation voltage
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2SB1273
QDQ4127
0dgb752
la 1201 sanyo
IS-313D
2SB1273
b1251
n1cj
EIAJ CP 301
30H150
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Untitled
Abstract: No abstract text available
Text: drawing MAoe in third angle projection thrs drawing is unpuslisheo. RELEASED FOR PUBLICATION COPVRIGHT 79 SV AMP INCORPORATEQ,HARRIS8URG.PA. ALL 7 ,19 5049 INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAT 6E COVERED 8V U. S. AND FOREIGN PATENTS AND/OR PATENTS PENDING.
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DF-0770
7T853
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2005A
Abstract: 2SA124 2SA1240 PNP transistor TO-92 BC ha13
Text: SANYO SEMICONDUCTOR CORP 32E D • 7^^70713 0 D □ flñ'3D 7 Hi T -M -H 2029A P N P Epitaxial Planar S ilico n T ransistor Differential Amp Applications 917C Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium and suited
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00Dflfl-30
T-91-20
SC-43
2005A
2SA124
2SA1240
PNP transistor TO-92 BC
ha13
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917c
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 32E D • 7^^70713 0 D □ flñ'3D 7 Hi T -M -H 2029A P N P Epitaxial Planar S ilico n T ransistor Differential Amp Applications 917C Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium and suited
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SC-43
-t--------15
917c
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transistor M 9741
Abstract: G40pC TA 2025 B 2SC3065 0GS71b S74B
Text: S AN Y O SEMICONDUCTOR CORP 3SE D TW QTb DDGflflm ^ , 1 a T -2 ?'2 7 N P N Epitaxial Planar S ilico n C o m p o site Transistor 2029A Differential Amp Applications S74B Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium
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T-29-27
T-91-20
SC-43
transistor M 9741
G40pC
TA 2025 B
2SC3065
0GS71b
S74B
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9571 transistor
Abstract: 2SA1237 u 5601 0gs71b
Text: SANYO SEMICONDUCTOR CORP 35E D 7^707^ OOCHläH 7 B T-21-27 PNP Epitaxial Planar S ilicon C om posite Transistor Differential Am p Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp
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7ie17G7b
T-91-20
SC-43
9571 transistor
2SA1237
u 5601
0gs71b
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Untitled
Abstract: No abstract text available
Text: AM P Military Qualified Electronics SMA Receptacles MIL-C-83517 — Panel Mount MIL-C-83517/1 Outline 2 Outline 1 Military Part No. AMP Part No. M/A-COM1 Part No. Ref. Only Outline Dimension A Military Part No. AMP Part No. M/A-COM’ Part No. (Ref. Only)
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MIL-C-83517
MIL-C-83517/1
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d331 npn transistor
Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Text: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ
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2SD330,
2SB514,
Q004T05
2SB514
DissipatioBH81
0DGB752
d331 npn transistor
D331 transistor
la 1201 sanyo
D331 PNP
D330 NPN transistor
transistor d331
d331
D331 NPN
TRANSISTOR B514
D330 transistor
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sj 2025
Abstract: 2SK333 2I k 2026 rifa
Text: SANYO SEMICONDUCTOR 3SE CORP D T W Q T b OOOßflöfi S T -2 7 -2 -7 Iffl N-Channel Junction Silicon Com posite FET .2 0 2 7 A Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range
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2027a
-10or
T-91-20
SC-43
sj 2025
2SK333
2I k
2026 rifa
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AO 4503
Abstract: 3S87
Text: 7 DRAWING MAOE in third angle projection this drawing is UNPUBLISHED. RELEASED | 1 4 6 5049 LOC DJST DP AO P F ZONE LTR FOR PUBLICATION ,19 COPYRIGHT 19 ev AMP JNCORPORATED,HARRISflURG,PA. ALL INTERNATIONAL RIGHTS RESERVED, AMP PRODUCTS NAY SE COVERED BY U. S. AND FOREIGN PATENTS AND/OR PATENTS PENDING.
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DF-0770
77TOS
3-S-87
AO 4503
3S87
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Untitled
Abstract: No abstract text available
Text: r 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 AMP 4805 REV 10/93 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL RJ6HTS RESERVED. , 19 4 2 LOC DIST REVISIONS DF CO LTR DESCRIPTION DATE 09-95 DRAWN PER 0600-4098-95 L DUN APVD 77 DBM THE T I P OF THE CONTACT POSTS WILL FALL WITHIN
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P05TJ
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2SC930
Abstract: transistor 2sC930 sj 2025 for amplifiers b1181 VLN 2003a 2SC930 D TRANSISTOR b1181 JIS B1181 NF Amp NPN Silicon transistor TO-3 sj 2025
Text: SANYO SEMICONDUCTOR CORP 12E D I 7 TT 7 0 7 Li""0004141 fl ^ * 2SC930 T - V - 1 7 2033 NPN. Epitaxial Planar Silicon Transistor 2003A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier
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2SC930
7cH707Li~
T-U-17
2SC930
2SC930SPA
2SC930NP
B1181
B1252
transistor 2sC930
sj 2025 for amplifiers
VLN 2003a
2SC930 D
TRANSISTOR b1181
JIS B1181
NF Amp NPN Silicon transistor TO-3
sj 2025
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d331
Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Text: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.
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2SB514,
2SD330,
2SB514
IS-20MA
IS-313
IS-313A
d331
2Sd331
sanyo b514
B514
d331 tr
sanyo D330
D331 PNP
2SB515D
D331 NPN
gat6
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D331 transistor
Abstract: d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP
Text: SANYO SEMICONDUCTOR CORP " îâ Ë _ D- | _ 7 en 7 G 7 t 2SD330, 331 0004^05 r - 3 3 - 0 ? 201OA 2SB514, 515 N P N / pnp Triple Diffused Planar Silicon Transistors 2012 Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ
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OCR Scan
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PDF
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2SD330,
2SB514,
r-33-0?
2SB514
B1181
B1252
D331 transistor
d331 npn transistor
D330 NPN transistor
D331 PNP
transistor D331
TRANSISTOR B514
D331 NPN
d330 transistor
D331
transistor D331 PNP
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