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    AMD DESIGN RETENTION MECHANISM Search Results

    AMD DESIGN RETENTION MECHANISM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    AMD DESIGN RETENTION MECHANISM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA/JEDEC JESD22-A110-B

    Abstract: JESD22-A117 JESD22 JESD22a117
    Text: Reliability Study AMD MirrorBit RELIABILITY STUDY White Paper OVERVIEW The MirrorBit™ cell is a breakthrough in NOR Flash memory cell architecture that enables a Flash memory product to hold twice as much data as standard Flash, without compromising device endurance, performance


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    PDF 5M-11/02-0 6203A EIA/JEDEC JESD22-A110-B JESD22-A117 JESD22 JESD22a117

    EIA 364-60

    Abstract: EIA-364-60 EIA-364-32 Socket-F Tyco AMD thermal design retention mechanism LGA1207 EIA-364-20 EIA-364-21 LF-LGA1207 LGA socket
    Text: lever actuated Land Grid Array LGA 1207 position socket LGA1207 and LF-LGA1207 1. SCOPE 1.1. Content Product specification 108-78375 24 AUG 2006 Rev.A This specification covers performance, tests and quality requirements for the Tyco Electronics lever actuated Land Grid Array (LGA) socket F 1207.


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    PDF LGA1207 LF-LGA1207 EIA 364-60 EIA-364-60 EIA-364-32 Socket-F Tyco AMD thermal design retention mechanism EIA-364-20 EIA-364-21 LF-LGA1207 LGA socket

    socket 940 pin package

    Abstract: AMD top marking socket 940 AMD 940 Pin Package amd socket 940 pin grid array socket 940 pin AMD socket s1 amd 940 2576-6 UPGA
    Text: AMD Socket 940 Design Specification Publication # 25766 Revision: 3.03 Issue Date: September 2003 2002, 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    AMD Socket S1 PIN LAYOUT

    Abstract: amd athlon PIN LAYOUT voltage ground socket 940 pin package amd socket 940 PIN LAYOUT 940 SOCKET PIN LAYOUT AMD socket s1 amd FX PIN LAYOUT amd athlon PIN LAYOUT socket 940 socket s1
    Text: AMD Socket 940 Qualification Plan Publication # 30353 Revision: 3.04 Issue Date: September 2003 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    Socket 754

    Abstract: AMD athlon socket 754 AMD socket s1 amd athlon 64 socket 754 AMD Socket 754 socket s1 Advanced Micro Devices EIA 364-60 EIA-364-103 socket S1 AMD Socket S1 PIN LAYOUT
    Text: Socket 754 Design and Qualification Requirements Publication # 24850 Rev: 3.07 Issue Date: August 2003 2001–2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    PDF EIA-364-23 Alloy-194 Alloy-194­ EIA-364-70 EIA-364-20 Socket 754 AMD athlon socket 754 AMD socket s1 amd athlon 64 socket 754 AMD Socket 754 socket s1 Advanced Micro Devices EIA 364-60 EIA-364-103 socket S1 AMD Socket S1 PIN LAYOUT

    amd socket 1207

    Abstract: amd socket F 49Z0000028 Socket F 91B0000007 AMD thermal design retention mechanism
    Text: Socket F 1207 Design Specification Publication # 31700 Revision: 1.04 Issue Date: July 2010 2004—2010 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. (“AMD”) products. AMD makes no representations or


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    PDF 91B0000007) amd socket 1207 amd socket F 49Z0000028 Socket F 91B0000007 AMD thermal design retention mechanism

    amd am3 pin out

    Abstract: 938-pin socket AM3 AM3 Processor Functional 938-pin functional socket am3 mounting amd am3 pin amd socket am3 91B0000090 socket am3 retention
    Text: Socket AM3 Design Specification Publication # 40523 Revision: 1.06 Issue Date: April 2010 Advanced Micro Devices 2006—2010 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    PDF 91B0000090) amd am3 pin out 938-pin socket AM3 AM3 Processor Functional 938-pin functional socket am3 mounting amd am3 pin amd socket am3 91B0000090 socket am3 retention

    socket am2

    Abstract: am2 socket pin out Socket AM2 Design Specification socket 940 am2 pin AM2 Processor Functional am2 specification socket am2 pins AM2 socket AMd functional am2 socket AM2 retention
    Text: Socket AM2 Design Specification Publication # 31875 Revision: 3.00 Issue Date: May 2008 Advanced Micro Devices 2004–2008 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    AM29F010B-120

    Abstract: AM29F010B-90 AMD ORDERING AM29F010B PACKAGE
    Text: Am29F010B Known Good Die Data Sheet Am29F010B Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been


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    PDF Am29F010B AM29F010B-120 AM29F010B-90 AMD ORDERING AM29F010B PACKAGE

    AMD ORDERING AM29F010B PACKAGE

    Abstract: AM29F010B-120 AM29F010B-90
    Text: Am29F010B Known Good Die Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29F010B AMD ORDERING AM29F010B PACKAGE AM29F010B-120 AM29F010B-90

    AM29F010B-120

    Abstract: AM29F010B-90 AMD ORDERING AM29F010B PACKAGE
    Text: Am29F010B Known Good Die Data Sheet Retired Product Am29F010B Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.


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    PDF Am29F010B AM29F010B-120 AM29F010B-90 AMD ORDERING AM29F010B PACKAGE

    INCOMING Plate INSPECTION

    Abstract: AM29F010B-120 AM29F010B-90 AM29F010
    Text: Am29F010B KGD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29F010B INCOMING Plate INSPECTION AM29F010B-120 AM29F010B-90 AM29F010

    AM29F016D-120

    Abstract: No abstract text available
    Text: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement Am29F016D Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications


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    PDF Am29F016D 26244A5 AM29F016D-120

    AM29F016D-120

    Abstract: amd 2732 AMD 26244
    Text: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement (Retired Product) Am29F016D Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for


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    PDF Am29F016D 26244A4 AM29F016D-120 amd 2732 AMD 26244

    sample code read and write flash memory

    Abstract: AM28F010A
    Text: FINAL Am28F010A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time


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    PDF Am28F010A 32-Pin 00H/FFH. sample code read and write flash memory

    CERAMIC LEADLESS CHIP CARRIER LCC 124

    Abstract: AM28F512A
    Text: FINAL Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


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    PDF Am28F512A 32-Pin 00H/FFH. CERAMIC LEADLESS CHIP CARRIER LCC 124

    AMD Flash Memory

    Abstract: No abstract text available
    Text: Section 4 Advantages of AM D’s 12.0 V Flash Mem ory Fam ily AM D’s Flash Mem ories Create a Defacto Industry Standard AMD is the first company to address the issue of device compatibility. In the world of Flash memories today, no two device offerings can be used as 100% compatible alter­


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    PDF 32-pin 32-bit AMD Flash Memory

    Untitled

    Abstract: No abstract text available
    Text: CONDENSED AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 Mbytes of addressable Flash memory ■ 2.7 V to 3.6 V, single power supply operation — Write and read voltage: 3.0 V -10/+20% — No additional supply current required for VPP


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    PDF 60-pad 100h-10Bh.

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


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    PDF Am28F256 32-Pin AM28F256

    AM28F020

    Abstract: No abstract text available
    Text: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase


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    PDF Am28F020 32-pin

    TDA 2051

    Abstract: AM2864AE-255DC
    Text: a Am2864AE Adva“ £ 8192 x 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication


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    PDF Am2864AE 32-byte 10-year 536-bit wf025150 TDA 2051 AM2864AE-255DC

    AM9864

    Abstract: AM2864BE-300/BXA
    Text: a Am2864BE AdVMgo 8192 X 8-Bit Electrically Erasable PRO M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write


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    PDF Am2864BE 32-byte 10-year Am2B64BE 536-bit WF025202 WF025172 AM9864 AM2864BE-300/BXA

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


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    PDF Am28F020A 32-Pin 14jis.

    Untitled

    Abstract: No abstract text available
    Text: a PRELIM INARY Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns maximum access lime ■ CMOS low power consum ption


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    PDF Am28F512A