af201
Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211
Text: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed
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Am3550
Am3550
wf010980
wfr02682
7321A
07322a
af201
AOX2051
Am319
AF211
AF212
AF203
AF216
AM2024
ls 11s
AM211
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am 332
Abstract: AM2001 Ax292
Text: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology
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Am3500
TC002800
WF010980
7322A
am 332
AM2001
Ax292
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af201
Abstract: F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter
Text: Am3550 Mixeçt ÉCL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed = 0.7 ns (Medium)
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Am3550
7321A
7322A
af201
F2018
AM211
am 332
F2017
SEM 2005 16 PINS inverter
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am2022
Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290
Text: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates
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Am3525
Am3525
TC002800
WF010980
7321A
D7322A
am2022
am22
full adder circuit using xor and nand gates
AM2031
AM2024
AM2051
t950
half adder circuit using nor and nand gates
ax253
AM290
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AM2001
Abstract: AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253
Text: Am 3500 Mask-Programmable ECL G ate Array PRELIM IN ARY > 3 DISTINCTIVE CHARACTERISTICS • • Up to 4988 equivalent gates - 576 internal cells - Up to 134 l/O s H igh-perform ance, low -pow er ECL gates - W orst case Tpcj = 0.6 ns Hi-Speed = 0.7 ns (Medium)
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Am3500
Am3500
TC002800
WF010980
7321A
7322A
AM2001
AM223
full adder circuit using nor gates
AM2005
AX202
AM2031
AM319
abx2002
full adder circuit using xor and nand gates
ax253
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AM3526
Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s
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1T-42-11-13
WF001164
00ECH7Ã
T-42-11-13
AM3526
2-bit half adder
AM312
AM290
AM2019
AM2001
002074
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AM2019
Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261
Text: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns
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Am3525
TC002800
7321A
7322A
AM2019
2-bit half adder layout
AX253
AX201
AM2001
AX261
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AOX2053
Abstract: No abstract text available
Text: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells
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Am3550
WFR02682
AOX2053
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