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    Untitled

    Abstract: No abstract text available
    Text: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2.9 W • RDS(on) * Qg industry benchmark


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    PDF DocID023668

    Untitled

    Abstract: No abstract text available
    Text: STL17N3LLH6 N-channel 30 V, 0.0038 Ω typ., 17 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS on max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb.


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    PDF STL17N3LLH6 DocID15535

    Untitled

    Abstract: No abstract text available
    Text: STL18N3LLH7 N-channel 30 V, 0.0034 Ω typ., 18 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - target specification Features Order code VDS RDS on max ID STL18N3LLH7 30 V 0.0045 Ω 18 A • Very low on-resistance


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    PDF STL18N3LLH7 AM15810v1 DocID025088

    Untitled

    Abstract: No abstract text available
    Text: STL11N3LLH6 N-channel 30 V, 0.006 Ω typ., 11 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS on max. ID STL11N3LLH6 30 V 0.0075 Ω 11 A (1) 1. The value is rated according Rthj-pcb.


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    PDF STL11N3LLH6 DocID17755

    Untitled

    Abstract: No abstract text available
    Text: STL4N10F7 N-channel 100 V, 0.068 Ω typ., 4 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - preliminary data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.08 Ω 4 A (1) 1. The value is rated according Rthj-pcb.


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    PDF STL4N10F7 DocID023898

    Untitled

    Abstract: No abstract text available
    Text: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode


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    PDF STL4N10F7 DocID023898

    Untitled

    Abstract: No abstract text available
    Text: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A (1) 1. The value is rated according Rthj-pcb.


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    PDF STL4N10F7 DocID023898

    Untitled

    Abstract: No abstract text available
    Text: STL7N10F7 N-channel 100 V, 0.027 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL7N10F7 100 V 0.035 Ω 7A • N-channel enhancement mode 3 • Lower RDS(on) x area vs previous generation


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    PDF STL7N10F7 DocID025972

    Untitled

    Abstract: No abstract text available
    Text: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode


    Original
    PDF STL4N10F7 DocID023898