Untitled
Abstract: No abstract text available
Text: Direct Copper Bonded DCB Ceramic Substrates Uncladed ceramic Aluminium Oxide Aluminium Nitride Al2O3 AlN Purity ≥ 96 % ≥ 97 % Dielectric strength 10 kV/mm ~14 kV/mm Electrical resistivity >10 Ωcm >1014 Ωcm Thermal conductivity 24-28 W/mK ≥ 150 W/mK
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Dielectric Constant Silicon Nitride
Abstract: thermal conductivity thermal conductivity maruwa AN170 ceramic thermal conductivity AN-200 AN-230
Text: MARUWA GENERAL CATALOG ALUMINIUM NITRIDE PRODUCTS [ AlN ] The Aluminium Nitride product is a new material having such characteristics as superior thermal conductivity, high electric insulation, and coefficient of thermal expansion similar to that of silicon Si and is drawing attention as a next-generation
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0015mm/mm
AN-170
AN-200
AN-230
400fC)
Dielectric Constant Silicon Nitride
thermal conductivity
thermal conductivity maruwa
AN170
ceramic thermal conductivity
AN-200
AN-230
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GUVB-S11SD
Abstract: No abstract text available
Text: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring
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GUVB-S11SD
GUVB-S11SD
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GUVC-T10GD
Abstract: No abstract text available
Text: GUVC-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings
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GUVC-T10GD
GUVC-T10GD
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CJ 24
Abstract: GUVB-T10GD Aluminium gallium nitride PHR-2
Text: UV-B Photodetector GUVB-T10GD Features Aluminium Gallium Nitride based material Schottky-type photodiode No cut-off filters needed Intrinsic visible blindness High responsivity Low dark current Designed to operate in photovoltaic mode Hermetic package sealed with quartz window
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GUVB-T10GD
076mm
CJ 24
GUVB-T10GD
Aluminium gallium nitride
PHR-2
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Untitled
Abstract: No abstract text available
Text: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838xNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W
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CHF8838xNF
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838CNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W
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CHF8838CNF
2002/95/EC
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CHF8838CNF
Abstract: 8838
Text: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838CNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W
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CHF8838CNF
SR0502
2002/95/EC
8838
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Untitled
Abstract: No abstract text available
Text: TaNSil Wire Bondable Silicon Chip Resistors Welwyn Components WBC Series • Ultra-stable TaNSil® resistors on silicon • MIL screening available • High resistor density • Highly reliable aluminium bond pads Gold bond pads available • Discrete or tapped schematics
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R0202
T0303
R0202/
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Untitled
Abstract: No abstract text available
Text: TaNSil Wire Bondable W NE Silicon Chip Resistors WBC SERIES ● Ultra-stable TaNSil® resistors on silicon ● MIL screening available ● High resistor density ● Highly reliable aluminium bond pads Gold bond pads available ● Discrete or tapped schematics
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R0202
extremely00k
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BP 2818
Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the
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EC4711
EC4711
21dBm
23Ghz
18dBm
30GHz
DSEC47117003
BP 2818
transistor K D 2499
UM 7222 G
transistor GaAs FET s parameters
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inverter welding machine circuit board
Abstract: washing machine electric circuit control circuit of induction cooker Electric Welding Machine thyristor Microwave Oven Inverter Control IC washing machine electric circuit drawing Dielectric Constant Silicon Nitride induction cooker circuit sheet metal press bending machine induction cooker circuit with IGBT
Text: 窒化アルミニウム製品〔ARN〕 ALUMINIUM NITRIDE PRODUCTS 回路部品 CIRCUIT CERAMICS 窒化アルミニウム製品は優れた熱伝導性、高い電気絶縁性、およ びシリコン（Si）に近い熱膨張率の特性を持ち、高熱伝導性材料と
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diele100M
inverter welding machine circuit board
washing machine electric circuit
control circuit of induction cooker
Electric Welding Machine thyristor
Microwave Oven Inverter Control IC
washing machine electric circuit drawing
Dielectric Constant Silicon Nitride
induction cooker circuit
sheet metal press bending machine
induction cooker circuit with IGBT
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Untitled
Abstract: No abstract text available
Text: TER Series Cable Load Assemblies Description: Features: Aeroflex offers a wide selection of "Cable Load Assemblies," made with a choice of either Beryllium Oxide BeO or Aluminum Nitride (AIN) resistive elements. These Cable Load Assemblies feature semi-flexible cables in sizes of 0.080 and 0.141 diameters with SMA style connectors as standard. Other cable
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AEROFLEX cable load
Abstract: nitride Aeroflex Microelectronic Solutions CAP ELE AEROFLEX TER AEROFLEX load
Text: TER Series Cable Load Assemblies Description: Features: Aeroflex offers a wide selection of "Cable Load Assemblies," made with a choice of either Beryllium Oxide BeO or Aluminum Nitride (AIN) resistive elements. These Cable Load Assemblies feature semi-flexible cables in sizes of 0.080 and 0.141 diameters with SMA style connectors as standard. Other cable
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Untitled
Abstract: No abstract text available
Text: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size TYPICAL PERFORMANCE These tantalum chips combine excellent stability with great power handling
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06-Apr-00
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TCR1005
Abstract: tantalum nitride
Text: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self - passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost TYPICAL PERFORMANCE ◆ ABS TRACKING TCR 100
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27-Apr-01
TCR1005
tantalum nitride
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BP Solar
Abstract: photovoltaic module solar cells circuit diagram
Text: SX 3200 200 watt photovoltaic module High-efficiency photovoltaic module using silicon nitride multicrystalline silicon cells Performance Rated power Pmax Power tolerance Nominal voltage Limited Warranty 1 200W ±9% 16V 25 years Configuration B Bronze frame with output cables and polarized Multicontact
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50psf)
113psf)
52mph)
BP Solar
photovoltaic module
solar cells circuit diagram
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Untitled
Abstract: No abstract text available
Text: P R E C I S I O N T H I N F I L M T E C H N O L O G Dual Value, Chip Resistor TA 33T Series, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size
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Untitled
Abstract: No abstract text available
Text: TM CALIFORNIA MICRO DEVICES Thin Film Resistor Series California Micro Devices offers the proven reliability of Tantalum Nitride in a high meg ohm resistor chip. Series TM high meg ohm resistor chips are available in values from 1 meg ohms to 20.0 meg ohms and tolerances to
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100Vdc
C1330800
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Untitled
Abstract: No abstract text available
Text: Direct Copper Bonded DCB Ceramic Substrates Uncladed ceramic Aluminium Oxide AI,Oa Aluminium Nitride AIN Purity > 96 % > 97 % Dielectric strength 10 kV/mm -1 4 kV/mm Electrical resistivity > 1 0 14 £3cm > 1 0 1“ ii:m Thermal conductivity 24-28 W/mK > 150 W/mK
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Untitled
Abstract: No abstract text available
Text: DCB Module Technology Based on new technologies IXYS is using a patented method which allows bonding of thick copper circuit-board conductors directly on both sides to ceramic aluminium oxide Al20 3 or aluminium nitride (AIN) materials. This DCB (Direct-Copper-Bonding) technology is the basis for
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thyristor phase control rectifier
Abstract: No abstract text available
Text: Chips, Direct Copper Bonding DCB and Direct Aluminium Bonding (DAB) Ceramic Substrates Power Semiconductor Chips IXYS has a wide range of chips for many electronic circuits. IGBT Chips Vc.3 vCE(Mt) •c G series, Low VCE(Bat) type G series, High Speed type
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Untitled
Abstract: No abstract text available
Text: MfcVï TaNSil W ire Bondable Silicon Chip Resistors Welwyn WBC SERIES • U ltra-stab le TaNSil® resistors on silicon • MIL screening available • High resistor density • Highly reliable aluminium bond pads Gold bond pads available • Discrete or tapped schematics
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R0202
T0303
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labels
Abstract: non inductive, thick film E5400
Text: COAXIAL TERMINATIONS TECHNICAL INFORMATION I LIST OF APPLICABLE DOCUMENTS : List of related documents covering the general mechanical and climatic tests applicable to the devices described in this catalog. AIR 7304 CEI 169.13 DIN 47295 GAM EG 13 NFC 207xx
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207xx
R404210119
R404692000
R404693000
labels
non inductive, thick film
E5400
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