Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ALPHA SPDT SWITCH Search Results

    ALPHA SPDT SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    5042/BEA Rochester Electronics LLC 5042 - Analog Switch, Spdt, 1-Channel, 75 Ohms - Dual marked (M38510/10503BEA) Visit Rochester Electronics LLC Buy

    ALPHA SPDT SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AP640R7-00

    Abstract: high power SPDT
    Text: 24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch AP640R7-00 0.113 • Broad Bandwidth ■ Low Loss, < 1.5 dB 2.078 Chip Outline Features 1.100 ■ High Isolation, > 28 dB 0.988 ■ Return Loss, < -12 dB ■ Fast Switching Speed, < 4 ns 0.398 Alpha’s high power, single pole, double throw PIN diode


    Original     		PDF AP640R7-00 12/02A AP640R7-00 high power SPDT

    HMC849LP4C

    Abstract: HMC849LP4CE hmc849
    Text: HMC849LP4CE v02.0410 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC849LP4CE HMC849LP4CE HMC849LP4C hmc849

    HMC849LP4CE

    Abstract: hmc849
    Text: HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC849LP4CE HMC849LP4CE hmc849

    Untitled

    Abstract: No abstract text available
    Text: HMC849LP4CE v03.0311 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features the hMc849LP4ce is ideal for: high isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC849LP4CE HMC849LP4CE

    HMC849LP4CE

    Abstract: No abstract text available
    Text: HMC849LP4CE v03.0311 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC849LP4CE HMC849LP4CE

    HMC849LP4CE

    Abstract: hmc849 HMC849LP H849 HMC849LP4C ALPHA spdt Switch HMC849LP4
    Text: HMC849LP4CE v02.0410 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC849LP4CE HMC849LP4CE hmc849 HMC849LP H849 HMC849LP4C ALPHA spdt Switch HMC849LP4

    schematic diagram phone path

    Abstract: H547 ALPHA spdt Switch
    Text: HMC547LC3 v00.0811 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 28.0 GHz Typical Applications Features The HMC547LC3 is ideal for: High Isolation: 45 dB @ 10 GHz 40 dB @ 20 GHz • Fiber Optics & Broadband Telecom Low Insertion Loss: 1.6 dB @ 10 GHz 1.9 dB @ 20 GHz


    Original     		PDF HMC547LC3 HMC547LC3 schematic diagram phone path H547 ALPHA spdt Switch

    Untitled

    Abstract: No abstract text available
    Text: HMC232LP4 / 232LP4E v04.0110 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12 GHz Typical Applications Features The HMC232LP4 E is ideal for: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz • Telecom Infrastructure Input P1dB: +27 dBm • Microwave Radio & VSAT Insertion Loss: 1.5 dB Typical @ 6 GHz


    Original     		PDF HMC232LP4 232LP4E 16mm2 HMC-DK005

    HMC190AMS8

    Abstract: HMC190A HMC190 H190A HMC239S8
    Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT Switch DC - 3 GHz Typical Applications Features The HMC190AMS8 E is ideal for: Low Insertion Loss: 0.4 dB • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input IP3: +50 dBm Positive Control: 0/+3V @ 3 µA


    Original     		PDF HMC190AMS8 190AMS8E HMC190A HMC190 H190A HMC239S8

    h232

    Abstract: HMC232LP4 ALPHA spdt Switch 232LP4E HMC232LP4E spdt switch dbm HMC-DK005
    Text: HMC232LP4 / 232LP4E v04.0110 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12 GHz Typical Applications Features The HMC232LP4 E is ideal for: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz • Telecom Infrastructure Input P1dB: +27 dBm • Microwave Radio & VSAT Insertion Loss: 1.5 dB Typical @ 6 GHz


    Original     		PDF HMC232LP4 232LP4E 16mm2 HMC-DK005 h232 ALPHA spdt Switch 232LP4E HMC232LP4E spdt switch dbm

    HMC547LP3E

    Abstract: HMC547LP3 20 GHz PIN diode GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
    Text: HMC547LP3 / 547LP3E v01.1007 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications Features The HMC547LP3 & HMC547LP3E is ideal for: High Isolation: >50 dB up to 5 GHz >45 dB up to 15 GHz • Basestation Infrastructure Low Insertion Loss: 1.6 dB @ 10 GHz


    Original     		PDF HMC547LP3 547LP3E HMC547LP3 HMC547LP3E 20 GHz PIN diode GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    HMC132G7

    Abstract: HMC347G8
    Text: HMC347G8 v02.0605 GaAs MMIC HERMETIC SMT SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC347G8 is ideal for: Isolation: 42 dB @ 2.5 GHz 30 dB @ 6.0 GHz • Telecom Infrastructure Insertion Loss: 2.0 dB @ 6.0 GHz • Microwave Radio & VSAT Non-Reflective Design


    Original     		PDF HMC347G8 HMC347G8 HMC132G7

    H190A

    Abstract: No abstract text available
    Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT SwITCh DC - 3 Ghz Typical Applications Features the hMc190AMS8 e is ideal for: Low insertion Loss: 0.4 dB • MMDS & wirelessLAN Ultra Small Package: MSOP8 • Portable wireless high input iP3: +50 dBm Positive control: 0/+3V @ 3 µA


    Original     		PDF HMC190AMS8 190AMS8E H190A

    H190A

    Abstract: HMC190AMS8E
    Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT SWITCH DC - 3 GHz Typical Applications Features The HMC190AMS8 E is ideal for: Low Insertion Loss: 0.4 dB • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input IP3: +50 dBm Positive Control: 0/+3V @ 3 A


    Original     		PDF HMC190AMS8 190AMS8E H190A HMC190AMS8E

    HMC132C8

    Abstract: HMC347C8
    Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8.0 GHz • Telecom Infrastructure Insertion Loss: 2.0 dB Typical • Microwave Radio & VSAT


    Original     		PDF HMC347C8 HMC347C8 HMC132C8

    GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    Abstract: HMC132C8 HMC347C8
    Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8 GHz • Telecom Infrastructure Insertion Loss: 2 dB Typical • Microwave Radio & VSAT Non-Reflective Design


    Original     		PDF HMC347C8 HMC347C8 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz HMC132C8

    Untitled

    Abstract: No abstract text available
    Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8 GHz • Telecom Infrastructure Insertion Loss: 2 dB Typical • Microwave Radio & VSAT Non-Relective Design


    Original     		PDF HMC347C8 HMC347C8

    Untitled

    Abstract: No abstract text available
    Text: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability


    OCR Scan     		PDF AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 AS004R2-11 AS006R2-10

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages


    OCR Scan     		PDF AS358-62 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 AT002N5-10

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Two Watt High Linearity Cellular SPDT Switch 0 Alpha AS103-59 Features • High Linearity 55 dBm IP3 @ 900 M Hz ■ Low Loss (0.35 dB @ 900 M Hz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control Voltages ■ Extremely Low Cost


    OCR Scan     		PDF AS103-59

    Untitled

    Abstract: No abstract text available
    Text: GaAs 1C Positive Control Non-Reflective SPDT Switch 0.5-2 GHz ES Alpha AS171-73 Features 9OT-6 • Positive Control Voltage 0.074 1.90 mm REF. r i P'N6^n n ■ Non-Reflective ■ Low DC Power Consumption 0.126 (3.20 mm) t - 0.087 (2.20 mm) f 0.071 (1.80 mm)


    OCR Scan     		PDF AS171-73 AS171-73 3/99A

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch Chip Alpha With Integral Driver DC-6 GHz AK006R2-00, AK006M2-00 Features • Integral Drive +5V, -5V ; CMOS and TTL Compatible ■ Low Power Consumption <20 mW ■ 20 Nanosec Switching Time ■ Chip Size 41 x 43 x 8 Mils ■ Non-Reflective or Reflective (Open)


    OCR Scan     		PDF AK006R2-00, AK006M2-00 AK006R2 AK006R2-00

    AS239-12

    Abstract: No abstract text available
    Text: ES Alpha GaAs 1C SPDT Reflective Switch DC-2.5 GHz A S 239-12 Features SOIC-8 • Low Insertion Loss 0.4 dB @ 1 GHz PIN 8 ■ High Isolation (35 dB @ 1 GHz) 0.050 (1.27 mm) BSC M ■ General Purpose Switching 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 IN D IC A TO R -


    OCR Scan     		PDF AS239-12 AS239-12 3/98A

    Untitled

    Abstract: No abstract text available
    Text: GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7-1.1 GHz ES Alpha AB100-90 Features BGA-MCM • High Isolation 90 dB @ 900 MHz 0.031 'A T C O R N E R A ‘AV CORNER n (0 .8 0 m m ) - ■ +5 V Control Voltages ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA)


    OCR Scan     		PDF AB100-90 AB100-90 3/99A