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    ALPHA 1000 FET Search Results

    ALPHA 1000 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ST1000GXH35 Toshiba Electronic Devices & Storage Corporation IEGT, 4500 V, 1000 A, 2-120B1S Visit Toshiba Electronic Devices & Storage Corporation
    SF-NLMAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    SF-NLNAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLNAMB0001-0001 QSFP-DD 400G Loopback Adapter Module for QSFP-DD Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    10005639-11109LF Amphenol Communications Solutions Vertical Through-Hole 240 Position DDR2 DIMM Connector, 1.00mm pitch Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions

    ALPHA 1000 FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 PDF

    AOL1702

    Abstract: SRFE
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOL1702 AOL1702 SRFE PDF

    AOD490

    Abstract: SRFE transistor free B60100
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOD490 AOD490 O-252 SRFE transistor free B60100 PDF

    AON6704L

    Abstract: No abstract text available
    Text: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AON6704L AON6704L CoAON6704L PDF

    aol1412

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us PDF

    AO4706

    Abstract: 24v 5a smps dt1000
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		AO4706 AO4706/L AO4706 AO4706L -AO4706L 24v 5a smps dt1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOD490 AOD490 O-252 000A/us PDF

    AO4926

    Abstract: No abstract text available
    Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS V = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ


    Original     		AO4926 AO4926 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 VDS V = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two


    Original     		AO4926 AO4926L PDF

    AOL1702

    Abstract: No abstract text available
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOL1702 AOL1702 AOL1702L 000A/us 0E-06 PDF

    AOD4110

    Abstract: SRFE AOD490
    Text: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOD4110 AOD4110 O-252 SRFE AOD490 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and


    Original     		AO4716 AO4716 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in


    Original     		AO4726 AO4726 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor 1234566576 General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOD492 AOD492 859AB PDF

    682 FET datasheet

    Abstract: AOD492 T 4512 H diode diode T 4512 H
    Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOD492 AOD492 O-252 682 FET datasheet T 4512 H diode diode T 4512 H PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 AOL1412L 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 00A/us PDF

    AON7704

    Abstract: No abstract text available
    Text: AON7704 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON7704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AON7704 AON7704 PDF

    AON7702

    Abstract: No abstract text available
    Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AON7702 AON7702 VoltageON7702 PDF

    AON7702

    Abstract: No abstract text available
    Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AON7702 AON7702 GON7702 PDF

    AOD4112

    Abstract: No abstract text available
    Text: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		AOD4112 AOD4112 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		AO4706 AO4706/L AO4706 AO4706L -AO4706L PDF