AOL1422
Abstract: LTD15PD
Text: AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1422 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is ESD protected and it is suitable for use in load switching and general
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AOL1422
AOL1422
LTD15PD
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AOL1446
Abstract: No abstract text available
Text: AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
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AOL1446
AOL1446
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AOL1426
Abstract: No abstract text available
Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
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AOL1426
AOL1426
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AOL1418
Abstract: No abstract text available
Text: AOL1418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1418 uses advanced trench technology to provide excellent R DS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
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AOL1418
AOL1418
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AOL1420
Abstract: No abstract text available
Text: AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.
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AOL1420
AOL1420
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aol1412
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
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AOL1702
Abstract: SRFE
Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1702
AOL1702
SRFE
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AOL1708
Abstract: SRFE Single N-channel Trench MOSFET 30V, 100.0A
Text: AOL1708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use
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AOL1708
AOL1708
SRFE
Single N-channel Trench MOSFET 30V, 100.0A
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IG 2200 19 00001
Abstract: AOL1413
Text: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is
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AOL1413
AOL1413
IG 2200 19 00001
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AOL1424
Abstract: No abstract text available
Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD
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AOL1424
AOL1424
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T 4512 H diode
Abstract: AOL1700 SRFE
Text: AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side
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AOL1700
AOL1700
T 4512 H diode
SRFE
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AOL1712
Abstract: No abstract text available
Text: AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side
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AOL1712
AOL1712
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Untitled
Abstract: No abstract text available
Text: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power
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AOL1436
AOL1436
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Untitled
Abstract: No abstract text available
Text: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
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AOL1414
AOL1414
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
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aol1432
Abstract: No abstract text available
Text: AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
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AOL1432
AOL1432
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Untitled
Abstract: No abstract text available
Text: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD
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AOL1424
AOL1424
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Untitled
Abstract: No abstract text available
Text: AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is
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AOL1401
AOL1401
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AOL1408
Abstract: No abstract text available
Text: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power
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AOL1408
AOL1408
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AOL1436
Abstract: No abstract text available
Text: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power
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AOL1436
AOL1436
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AOL1444
Abstract: No abstract text available
Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power
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AOL1444
AOL1444
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Untitled
Abstract: No abstract text available
Text: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
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AOL1414
AOL1414
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AOL1440
Abstract: No abstract text available
Text: AOL1440 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AOL1440 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a low side switch in CPU core power
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AOL1440
AOL1440
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AOL1413
Abstract: Transistor EAR - 3
Text: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is
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AOL1413
AOL1413
CurrenL1413
Transistor EAR - 3
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