ILS 404 CB
Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
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MIL-S-19500/120C
MIL-S-19500/120B
2N706
MIL-S-19500
ILS 404 CB
2n706 transistor
transistor array K1 marking
3001 8AT
transistor 2n706
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01F HIGH SPEED SWITCHING APPLICATIONS U nit in mm • Sm all Package • Low on Resistance Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V) • Low Gate Threshold Voltage
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SSM3K01F
10nISV
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TIP 40c transistor
Abstract: photo transistor terminal transistor TIP 320 PCB PHOTO SENSOR PHOTO SENSOR of application PHOTO TRANSISTOR AHF21 AHF22 AHF23 hydrogen diode
Text: AHF2 AHF2 TIP SWITCHES SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm • The contact type is equivalent to normally closed contacts, which satisfies
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) EQUIVALENT CIRCUIT 6 5 R1 4 R2
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UD12K
DTA144E
DTC144E
OT-363
UD12KL
UD12K-AL6-R
UD12KL-AL6-R
OT-363
QW-R218-005
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) 1 EQUIVALENT CIRCUIT 3 2 R1
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DTA114E
DTC114E
OT-363
OT-363
QW-R218-004
120mW
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS 3 FEATURES 1 2 EQUIVALENT CIRCUIT B SOT-23 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
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DTC143T
OT-23
OT-323
OT-523
DTC143TL
DTC143T-AE3-R
DTC143TL-AE3-R
DTC143T-AL3-R
DTC143TL-AL3-R
DTC143T-AN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DTB143E PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR BUILT-IN RESISTORS 3 2 FEATURES EQUIVALENT CIRCUIT 2 1 SOT-323 1 2 SOT-723 TO-263 1 TO-92 OUT R1 3 1 SOT-23 * Built-in bias resistors that implies easy ON/OFF applications.
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DTB143E
OT-323
OT-723
O-263)
OT-23
DTB143EL-AE3-R
DTB143EG-AE3-R
DTB143EL-AL3-R
DTB143EG-AL3-R
DTB143EL-AQ3-R
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2SC2712 equivalent
Abstract: Equivalent 2SC3074 2SC2873 equivalent Transistor 78 L 05 2SC2712
Text: 7. Maximum Ratings & Electrical Characteristics 7. Maximum Ratings & Electrical Characteristics 7.1 Maximum Ratings Maximum ratings are equal to those of conventional packages or equivalent with the exception of power dissipation and safe operating area. L ead Type
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O-92/M
O-92MOD
O-92M
O-220
2SC3074
2SA1244.
2SC2712 equivalent
Equivalent 2SC3074
2SC2873 equivalent
Transistor 78 L 05
2SC2712
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values
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RN2112FS
RN2113FS
RN2112FS,
RN1112FS,
RN1113FS
RN1112FS
RN1113FS
RN2113FS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DTA143E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS BUILT- IN BIAS RESISTORS 3 3 2 1 2 SOT-523 OUT 1 SOT-323 3 EQUIVALENT CIRCUIT R1 2 SOT-23 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
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DTA143E
OT-523
OT-323
OT-23
OT-723
DTA143EL-AE3-R
DTA143EG-AE3-R
DTA143EL-AL3-R
DTA143EG-AL3-R
DTA143EL-AN3-R
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY 20V LOW SATURATION TRANSISTORS Features Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A • RSAT = 47mΩ for a low equivalent On-Resistance
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ZXTC6718MC
150mV
-220mV
DS31927
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2n5401 equivalent
Abstract: transistor equivalent of 2N5401 transistor equivalent for 2N5401
Text: SENSITRON SEMICONDUCTOR SHD431008 TECHNICAL DATA DATA SHEET 2040,REV. - SMALL SIGNAL TRANSISTOR - PNP Electrically Equivalent to 2N5401 DESCRIPTION: A SINGLE PNP SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).
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SHD431008
2N5401)
2n5401 equivalent
transistor equivalent of 2N5401
transistor equivalent for 2N5401
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transistor equivalent 2n5551
Abstract: transistor 2n5551 equivalent SHD431108 2N5551 equivalent 2039 transistor
Text: SENSITRON SEMICONDUCTOR SHD431108 TECHNICAL DATA DATA SHEET 2039, REV - SMALL SIGNAL TRANSISTOR - NPN Electrically Equivalent to 2N5551 DESCRIPTION: A SINGLE NPN SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).
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SHD431108
2N5551)
transistor equivalent 2n5551
transistor 2n5551 equivalent
SHD431108
2N5551 equivalent
2039 transistor
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RN4982FS
Abstract: No abstract text available
Text: RN4982FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4982FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4982FS
RN4982FS
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RN4992FS
Abstract: No abstract text available
Text: RN4992FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4992FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4992FS
RN4992FS
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RN4990FS
Abstract: No abstract text available
Text: RN4990FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4990FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4990FS
RN4990FS
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RN4989FS
Abstract: No abstract text available
Text: RN4989FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4989FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4989FS
RN4989FS
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ULN2003 ac
Abstract: ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration
Text: MARCH 1982 ANALO G DIVISION ULN2001/03/04 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEMATICS PIN CONFIGURATION These high-voltage, h ig h -cu rre n t D arling ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on
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ULN2001/03/04
600mA
ULN-2001
ULN2003 ac
ULN2001
uln 2004
ULN2003N
ULN2003 PIN configuration
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UZF851
Abstract: UZR10 UZF852 Iron Circuit Diagram UZR53 UZZ72
Text: 0.6.8 16:08 Page 25 AMPLIFIER-SEPARATED PROXIMITY SENSORS UZR Series THE HIGHEST ACCURACY FOR YOUR SENSING APPLICATIONS Slim & Microscopic Reliable Accurate The amplifier is just 10mm .394inch wide, the smallest beyond anyone else. The style of it is equivalent to UZF1,
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394inch
UZR50
110inch
UZR51,
UZR52,
UZR53,
torquQ813
UZQ814
843ft
UZQ811
UZF851
UZR10
UZF852
Iron Circuit Diagram
UZR53
UZZ72
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Untitled
Abstract: No abstract text available
Text: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.
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NJF6510
MIL-PRF-19500
NJF6510
MX2N3822.
MIL-PRF-19500
O-206AF)
T4-LDS-0260,
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free all transistor equivalent book
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTD113ZK / DTD113ZU / DTD113ZS •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent c ir cuit). 2) The bias resistors consist of thinfilm resistors with complete isola
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DTD113ZK
DTD113ZU
DTD113ZS
DTD113ZK
SC-59
free all transistor equivalent book
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Untitled
Abstract: No abstract text available
Text: KSR2002 KSR2002 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR1002 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit
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KSR2002
KSR1002
KSR2002TA
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Untitled
Abstract: No abstract text available
Text: KSR1002 KSR1002 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to KSR2002 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit
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KSR1002
KSR2002
KSR1002TA
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