Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ALL TRANSISTOR BOOK Search Results

    ALL TRANSISTOR BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ALL TRANSISTOR BOOK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC3554

    Abstract: data transistor nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SC3554 D17970EJ3V0DS00 TC-1644A) D17970EJ3V0DS 2SC3554 data transistor nec PDF

    2SD1950

    Abstract: C1987 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SD1950 D17976EJ3V0DS00 TC-1894A) D17976EJ3V0DS 2SD1950 C1987 NEC Systems PDF

    2sc3618 application

    Abstract: NEC diode nec transistor 2SC3618
    Text: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SC3618 D17971EJ3V0DS00 TC-1641A) D17971EJ3V0DS 2sc3618 application NEC diode nec transistor 2SC3618 PDF

    TC1628

    Abstract: D1793 2SB1114 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SB1114 D17936EJ3V0DS00 TC-1628A) D17936EJ3V0DS TC1628 D1793 2SB1114 NEC Systems PDF

    2SD1614

    Abstract: NEC silicon epitaxial power transistor NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SD1614 D17973EJ3V0DS00 TC-1649A) D17973EJ3V0DS 2SD1614 NEC silicon epitaxial power transistor NEC Systems PDF

    1115a

    Abstract: D1794 2SB1115 1115A ics NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SB1115, 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SB1115, D17940EJ3V0DS00 TC-1624A) 2SB1115 D17940EJ3V0DS 1115a D1794 1115A ics NEC Systems PDF

    2SD1006

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SD1006, D17972EJ4V0DS00 TC-1369B) D17972EJ4V0DS 2SD1006 PDF

    nec speed grade

    Abstract: nec transistor 2SA1463
    Text: DATA SHEET SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SA1463 D17935EJ3V0DS00 TC-1889A) D17935EJ3V0DS nec speed grade nec transistor 2SA1463 PDF

    2SC3617

    Abstract: TC1640 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD <R> <R> <R> <R> <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


    Original
    2SC3617 D17913EJ3V0DS00 TC-1640A) 2SC3617 TC1640 NEC Systems PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units


    Original
    DS2003 SNLS394J DS2003 PDF

    SNLS394J

    Abstract: No abstract text available
    Text: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units


    Original
    DS2003 SNLS394J DS2003 SNLS394J PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units


    Original
    DS2003 SNLS394J DS2003 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units


    Original
    DS2003 SNLS394J DS2003 PDF

    5024X

    Abstract: TPS65100
    Text: TPS65100 www.ti.com SLVS496 – SEPTEMBER 2003 FEATURES DESCRIPTION • • • • The TPS65100 offers a very compact and small power supply solution to provide all three voltages required by thin film transistor TFT LCD display. Additionally the device has an integrated VCOM buffer to drive the LCD


    Original
    TPS65100 SLVS496 TSSOP-24 QFN-24 TPS65100 5024X PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original
    X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2802 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are


    Original
    PA2802 PDF

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original
    X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 PDF

    opto d213

    Abstract: d213 opto MOCD213 T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface


    OCR Scan
    MOCD213 opto d213 d213 opto MOCD213 T PDF

    D217 OPTO

    Abstract: MOCD217 opto D217
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline O ptoisolators MOCD217 Transistor Output Low Input Current [CTR* 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


    OCR Scan
    MOCD217 RS481A MOCD217 TA-25 D217 OPTO opto D217 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan
    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    all transistor book

    Abstract: powerex igbt powerex diode
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 P o W G rG X Power Transistor Module Reference Guide Sixth Edition August, 1998 Table of Contents Copyright 1993 by Powerex, Inc. All rights reserved. Introduction/Quality Policy. 2


    OCR Scan
    PDF

    MOC211

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC211 MOC212 M OC213 Sm all Outline O ptoisolators [CTR - 2 0 % Min] Transistor Output {CTR = 6 0 % Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,


    OCR Scan
    RS481A E54915 MOC212 MOC213 MOC211 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.


    OCR Scan
    2SC3582 2SC3582 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA805T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • S m all Feed-back C apacitance


    OCR Scan
    uPA805T 2SC4958) IPA805T iPA805T-T1 PDF