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    ALL MOSFET LIST Search Results

    ALL MOSFET LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ALL MOSFET LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS ON , fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the


    Original     		PDF UF1010A UF1010A O-220 UF1010AL-TA3-T UF1010AG-TA3-T QW-R502-582

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


    Original     		PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    UF1010EL

    Abstract: UF1010EL-TA3-T UF1010E UF1010EL TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all HEFET power MOSFET devices’ features,


    Original     		PDF UF1010E UF1010E UF1010EL UF1010EG UF1010E-TA3-T UF1010EL-TA3-T QW-R502-306 UF1010EL UF1010EL-TA3-T UF1010EL TO-220

    UF1010EL

    Abstract: UF1010EL-TA3-T uf1010e
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T O-220 O-220F1 QW-R502-306 UF1010EL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T UF1010EL-TF2-T UF1010EG-TF2-T QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET  1 DESCRIPTION 1 TO-220 Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E O-220 UF1010E O-220F2 O-263 O-220F1 UF1010EL-at QW-R502-306

    rg45

    Abstract: UF3205G-TQ2-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T UF3205L-TQ2-T UF3205G-TQ2-T UF3205L-TQ2-R UF3205G-TQ2-R O-220 rg45

    uf3205

    Abstract: 304 MOSFET UF3205L uf3205l-ta3-t
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T MBR20150CL-TQ2-T MBR20150CG-TQ2-T MBR20150CL-TQ2-R MBR20150ues QW-R502-304 304 MOSFET UF3205L

    UF3205L

    Abstract: mosfet vds25v ID 62A UF3205
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T QW-R502-304 UF3205L mosfet vds25v ID 62A

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECFICATION PE4120DIE Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4120 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range. This quad array operates with differential signals at all ports RF, LO,


    Original     		PDF PE4120DIE PE4120

    IC 2 5/TDA 7329

    Abstract: and/TDA 7329
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2 IC 2 5/TDA 7329 and/TDA 7329

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    AN2344

    Abstract: STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w
    Text: AN2344 Application Note Power MOSFET avalanche characteristics and ratings Introduction Back in the mid-80s, power MOSFET manufacturers started to claim a new outstanding feature: Avalanche Ruggedness. Suddenly, new families of devices evolved, all with this “new” feature. The implementation


    Original     		PDF AN2344 mid-80s, AN2344 STW9NK80Z STP11NM60FP STP9NK80Z Avalanche Transistor Circuits for Generating high power bjt 150w

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECFICATION PE4120DIE Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4120 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range. This quad array operates with differential signals at all ports RF, LO,


    Original     		PDF PE4120DIE PE4120

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT3205 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial


    Original     		PDF UTT3205 UTT3205 O-220 146nC QW-R502-510

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT3205 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial


    Original     		PDF UTT3205 UTT3205 146nC O-220 QW-R502-510

    UF3205L

    Abstract: 110A 55V
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T UF3205L-TQ2-T UF3205G-TQ2-T UF3205L-TQ2-R UF32ues QW-R502-304 UF3205L 110A 55V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT3205 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial


    Original     		PDF UTT3205 UTT3205 146nC UTT3205L-TA3-T

    schematic diagram 48V 500W Controller

    Abstract: LM5045
    Text: LM5045 LM5045 Full-Bridge PWM Controller with Integrated MOSFET Drivers Literature Number: SNVS699E LM5045 Full-Bridge PWM Controller with Integrated MOSFET Drivers General Description Features The LM5045 PWM controller contains all of the features necessary to implement Full-Bridge topology power converters


    Original     		PDF LM5045 LM5045 SNVS699E schematic diagram 48V 500W Controller

    C549B

    Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS


    OCR Scan     		PDF 5KA43A 5KE440CA 1N746 1N759 1N957 UF4001 UF4007 UF5400 UF5408 UG06A C549B C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10