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    ALL K3667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADP2108UJZ-REDYKIT Analog Devices RedyKit 1.2,3.3 in bds all vol Visit Analog Devices Buy
    ADP2370CPZ-REDYKIT Analog Devices Redykit 1.8,3.3 on bds all vol Visit Analog Devices Buy
    ADP2504CPZ-REDYKIT Analog Devices RedyKit 2.8, 5.0 on bds all vo Visit Analog Devices Buy
    ADP7104RDZ-REDYKIT Analog Devices Redykit 1.8,3.3 on bds all vol Visit Analog Devices Buy
    ADP7104CPZ-REDYKIT Analog Devices Redykit 1.8,3.3 on bds all vol Visit Analog Devices Buy

    ALL K3667 Datasheets Context Search

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    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent