ALG TRANSISTOR Search Results

ALG TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

ALG TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
he 8050 cd transistor Abstract: No abstract text available Text: à à HT82012 HOLTE AD PCM Synthesizer for External Serial ROM Features • • • • • • • • • • O p e ra tin g voltage: 2.4V~5.0V D irect in te rfa ce w ith th e H O L T E K se ria l ROM 12-bit ay aly sis a n d 3-bit/4-bit AD PCM coding alg o rith m	OCR Scan	12-bit HT82012 KEY15) LM386 KEY15 HT23C512/HT23C010) 512Kbx4/1Mbx4 he 8050 cd transistor	PDF
CMOS LSI two sound generator Abstract: 8656B Text: HOLTEK HT8656 Talking Back Features • • • • • O p e ra tin g v o lta g e : 4 .5 V ~ 5 .5 V A D M alg o rith m D R A M selection : - 64K - 25 6 K S a m p lin g ra te selection : - 32 K b - 16K b A uto sto p re co rd in g - 0.5 secon d s silen ce is d etected	OCR Scan	HT8656 LM386 HT8656 64K/256K CMOS LSI two sound generator 8656B	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
ALY TRANSISTOR Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23	Original	KTC3875 KTA1504. OT-23 BL/SSSTC056 ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING	PDF
LF2407 Abstract: program of GSM with ccs c compiler C28x C6711 DSP kit C5416 lc2402 TMS320TM 3G equipments dsl 500b st er C548 Text: DSP is the E N G I N E for the I N T E R N E T A G E …and much more! We’re Extending Our DSP Lead DSP Market Share 60 50 40.5 44.8 43.2 44.1 44.7 47 48.0 TI #1 % SHARE 40 30 Lucent TI gained DSP market share in 1999 for 6th year in a row 20 Motorola 10	Original	C2000TM C5000TM C6000TM TMS320 1960s 1970s 1980s 1990s 2000s LF2407 program of GSM with ccs c compiler C28x C6711 DSP kit C5416 lc2402 TMS320TM 3G equipments dsl 500b st er C548	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage	Original	OT-23 KTC3875 OT-23	PDF
2SC3875 Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises Text: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage	Original	2SC3875 OT-23 150mW 100mA, 100MHz 2SC3875-G 2SC3875-Y 2SC3875-GR 2SC3875 ALY TRANSISTOR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr Elite Enterprises	PDF
ALY TRANSISTOR Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 KTC3875 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range	Original	OT-23 KTC3875 OT-23	PDF
aly smd Abstract: transistor smd ALG Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity	Original	KTC3875 OT-23 100mA, aly smd transistor smd ALG	PDF
ALY TRANSISTOR Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	KTC3875 OT-23 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR	PDF
transistor smd ALG Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10 Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity	Original	KTC3875 OT-23 100mA, transistor smd ALG ALY SMD smd transistor marking KTC3875 transistor smd aly 10	PDF
Marking ALY Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)	Original	OT-23 KTC3875 OT-23 KTA1504 100mA, Marking ALY	PDF

KTC3875 Abstract: marking ALG transistor ALY ALY 23 sot-23 MARKING ALG Text: KTC3875 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 50 60	Original	KTC3875 OT-23 KTC3875 OT-23 marking ALG transistor ALY ALY 23 sot-23 MARKING ALG	PDF
KTC3875 Abstract: ALG Transistor MARKING Text: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE	Original	KTC3875 OT-23 KTA1504 KTC3875-Y KTC3875-GR 100mA, 22-Feb-2013 KTC3875 ALG Transistor MARKING	PDF
K 2645 transistor Abstract: transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply featu res: • in triple diffusion technique • Short switching time	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 K 2645 transistor transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927	PDF
Untitled Abstract: No abstract text available Text: 32E ÔE3b320 T> DG17207 b m S I P PZTA 42; P Z TA 43 NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SEM ICONDS T - - 5 3 -3 -1 • High breakdown voltage • Low collector -emitter saturation voltage • Complementary types: PZTA 92/93 PNP Marking	OCR Scan	E3b320 DG17207 12-mm Q62702- Z2035 OT-223 Q62702-Z2036 0Q1721Q T-33-29	PDF
BFW17A Abstract: bfw17a philips semiconductor Text: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.	OCR Scan	bbS3T31 Q3S133 BFW17A MEA366 MEM17 BFW17A bfw17a philips semiconductor	PDF
transistor BFT 95 Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !	OCR Scan	000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor	PDF
ALG TRANSISTOR Abstract: transistor PNP ALG transistor BC 368 Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage	OCR Scan	15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368	PDF
transistor 6bt Abstract: DC/transistor 6bt Text: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack	OCR Scan	BU2508AF 00583SD OT199; transistor 6bt DC/transistor 6bt	PDF
K 2645 transistor Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645	PDF
MFC4000 Abstract: Mfc4000p TRANSFORMAR Text: ,/ 4 - w a t t a u d i o AMPLIFIER ^ CONSUM ER PRODUCTS MFC4000P A monolithic silicon davlce dMignad fo r th e o utput stage o f b a tte r y p o w rad p o rtab li radios. • 260 mW of Audio Output Power	OCR Scan	MFC4000P 4000P MFC4000 Mfc4000p TRANSFORMAR	PDF

ALG TRANSISTOR Search Results

ALG TRANSISTOR Result Highlights (5)

ALG TRANSISTOR Datasheets Context Search

he 8050 cd transistor

CMOS LSI two sound generator

y51 h 120c

2N2222A 338

ALY TRANSISTOR

LF2407

Untitled

2SC3875

ALY TRANSISTOR

Untitled

aly smd

ALY TRANSISTOR

transistor smd ALG

Marking ALY

KTC3875

KTC3875

K 2645 transistor

Untitled

BFW17A

transistor BFT 95

ALG TRANSISTOR

transistor 6bt

K 2645 transistor

MFC4000