Untitled
Abstract: No abstract text available
Text: NEW The easy to use, affordable and high quality desktop scanner for whole slide imaging. * The NanoZoomer series as medical devices may be subject to government regulations where they are used. Hamamatsu makes no representation with regard to the conformity of these products to these regulations. Please consult your local sales representative for more information.
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B1201
SBIS0107E01
OCT/2014
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SE 7889
Abstract: peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW
Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%) 30 Top=25℃ RADIANT OUTPUT POWER (W)
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L8413
SE-171-41
LLD1007E01
SE 7889
peltier cooler
Peltier module
L8413
LLD1007E01
AL7 1BW
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600 um laser fiber medical
Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)
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L9399
L9399
600 um laser fiber medical
L929
Peltier element
836 DIODE
LLD1012E01
836 DIODE current
"Peltier element"
AL7 1BW
CW Laser
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peltier cooler
Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA
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L8413
SE-171-41
LLD1007E02
peltier cooler
Peltier module
58520
L8413
808nm
source photonics
LLD1007E02
817 diode
CW laser diode
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L8410
Abstract: L8412 LLD1009E01 E30W
Text: HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%)
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L8410,
L8412
L8410
L8412
LLD1009E01
E30W
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LD chip
Abstract: LLD1013E01
Text: CW LASER DIODES L9418 100 Relative Radiant Output Power % Radiant Output Power Φe (W) ( Top(c) = 25 °C ) ( Top(c) = 25 °C ) 1.5 1.0 0.5 0.5 Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW) 60 FEATURES 40 Radiant output power (CW) : 1W Peak Emission Wavelength : 980 nm ± 3 nm
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L9418
980nm,
L9418
SE-171-41
LLD1013E01
LD chip
LLD1013E01
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L8446
Abstract: L8446-04 L8446-06 LLD1010E01 CW laser diode
Text: INFRARED CW LASER DIODE L8446 SERIES Figure1 Radiant Output Power vs. Forward Current Typ. (Tc=25˚c) (Tc=25˚c) PRELIMINARY DATA 100 RELATIVE RADIANT OUTPUT POWER (%) 1.0 0.5 High optical power of 1W under CW operation 80 60 FEATURES High optical power : 1W
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L8446
L8446-04
L8446,
SE-171-41
L8446-06
LLD1010E01
L8446-04
L8446-06
LLD1010E01
CW laser diode
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Ultrafast Photodetectors GMbh
Abstract: MSM photodetector photodetector G4176 G4176-01 G4176-02 G7096 G7096-01 G7096-02 VB10V
Text: ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES Figure 1: Optical Pulse Response ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=10V) (VB=10V) OUTPUT RADIANT SENSITIVITY (A/W)
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G7096
G7096)
G7096
G7096-01
G7096-02
1/4-36UNS-2B
Ultrafast Photodetectors GMbh
MSM photodetector
photodetector
G4176
G4176-01
G4176-02
G7096-01
G7096-02
VB10V
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L8412
Abstract: L8410 LLD1009E01
Text: HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%)
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L8410,
L8412
LLD1009E01
L8412
L8410
LLD1009E01
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SE 7889
Abstract: high power laser L8411 LLD1008E01
Text: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Low Duty Ratio Type Typ. Pulse Duration=200µs Frequency=50Hz 100 80 60 40 20 Pulse Duration=200µs Frequency=1KHz 60 FEATURES High optical power : 50 to 100W/bar in average
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L8411
00W/bar
SE-171-41
LLD1008E01
SE 7889
high power laser
L8411
LLD1008E01
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Ultrafast Photodetectors GMbh
Abstract: GaAs MSM MSM photodetector photodetector 850 nm G4176 G4176-01 G4176-02 LPRD1014E03 ultrafast photodetectors
Text: ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 1: Optical Pulse Response ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=7V) (VB=7V) 100 OUTPUT RADIANT SENSITIVITY (A/W)
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G4176
G4176)
G4176
G4176-01
G4176-02
G4176-SE
1/4-36UNS-2B
Ultrafast Photodetectors GMbh
GaAs MSM
MSM photodetector
photodetector 850 nm
G4176-01
G4176-02
LPRD1014E03
ultrafast
photodetectors
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L8411
Abstract: LLD1008E01
Text: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Figure 2: Radiant Output Power vs. Forward Current 100 120 Pulse Duration=200 s Frequency=1KHz RADIANT OUTPUT POWER W Pulse Duration=200μs Frequency=50Hz RADIANT OUTPUT POWER (W)
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L8411
00W/bar
SE-171-41
LLD1008E01
L8411
LLD1008E01
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transistor 1BW
Abstract: j 6910 Hamamatsu Hamamatsu Corporation 1bw transistor Hamamatsu Photonics H8025-126 1011E-01
Text: SENSOR HEAD FOR UV POWER METER H8025-126 SPECIFICATIONS Unit nm — mm °C Description/Value 126 Excimer lamp 6 0 to +45 Irradiance [100 nW/cm2 to 100 mW/cm2], Integrated optical power [1 nJ/cm2 to 12 J/cm2] auto range selection 55 W x 75 (D) × 18 (H) a cable is not included
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H8025-126
B0018EA
B0017EA
SE-171-41
1011E01
transistor 1BW
j 6910
Hamamatsu
Hamamatsu Corporation
1bw transistor
Hamamatsu Photonics
H8025-126
1011E-01
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Hamamatsu
Abstract: j 6910 AL7 1BW Hamamatsu Photonics H8025-222
Text: SENSOR HEAD FOR UV POWER METER H8025-222 SPECIFICATIONS Unit nm — mm °C Description/Value 222 Excimer lamp 6 0 to +45 Irradiance [100 nW/cm2 to 100 mW/cm2], Integrated optical power [1 nJ/cm2 to 12 J/cm2] auto range selection 55 W x 75 (D) × 18 (H) a cable is not included
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H8025-222
B0019EA
B0017EA
SE-171-41
1013E01
Hamamatsu
j 6910
AL7 1BW
Hamamatsu Photonics
H8025-222
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Hamamatsu
Abstract: telephone transistor 1BW S2461 S2461-01 SE-171
Text: SSD Si strip detector S2461 series DC-coupled single-sided Si strip detector for particle tracking Features Applications l Large area l Low noise l Low dark current, excellent about bias voltage tolerance l S2461-01: PWB mount type • Specifications Parameter
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S2461
S2461-01:
S2461
SE-171
KSPD1045E01
Hamamatsu
telephone
transistor 1BW
S2461-01
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transistor 1BW
Abstract: Hamamatsu 1bw equivalent 1bw semiconductor 1bw transistor EIA-604-10 L8958 L8958-11 C5983 LD connector SC
Text: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. l 1.3 µm FP Fabry-perot laser • Absolute maximum ratings (Ta=25 °C)
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L8958
L8958-11
SE-171
KLED1040E02
transistor 1BW
Hamamatsu
1bw equivalent
1bw semiconductor
1bw transistor
EIA-604-10
L8958-11
C5983
LD connector SC
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scintillator
Abstract: S8193 SE-171 ceramic scintillator
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms l Unlike CsI, has no deliquescence
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S8193
SE-171
KSPD1042E01
scintillator
S8193
ceramic scintillator
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scintillator
Abstract: S8193 SE-171 x-ray tube 026 950-S photodiode 011
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E01
scintillator
S8193
x-ray tube 026
950-S
photodiode 011
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Abstract: No abstract text available
Text: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. • Absolute maximum ratings Ta=25 °C Parameter
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L8958
L8958-11
SE-171
KLED1040E01
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. l 1.3 µm FP Fabry-perot laser • Absolute maximum ratings (Ta=25 °C)
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L8958
L8958-11
SE-171
KLED1040E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C
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S8559
SE-171
KSPD1051E01
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scintillator
Abstract: S8559 x-ray tube SE-171
Text: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C
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S8559
SE-171
KSPD1051E02
scintillator
S8559
x-ray tube
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photodiode 011
Abstract: KPIN1056E01 S8283 SE-171
Text: PHOTODIODE Si PIN photodiode S8283 Photodiode chips arranged on flexible PC board Features Applications l Photodiode using flexible cable l 3D wiring possible l Thin package: 1.5 mm thick Max. l Active area: 1.05 x 1.05 mm l Laser monitor, etc. • Absolute maximum ratings Ta=25 °C
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S8283
SE-171
KPIN1056E01
photodiode 011
KPIN1056E01
S8283
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Untitled
Abstract: No abstract text available
Text: Global Sales Offices U.S.A. Shindengen America, Inc. http://www.shindengen.com/ Head Office 161 Plaza La Vista, Camarillo, CA93010 U.S.A. Phone: +1-805-445-8420/800-634-3654 FAX: +1-805-445-8421 Chicago Office 2333 Waukegan Road. Suite 150 Bannockburn, IL60015 U.S.A.
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CA93010
IL60015
D-40479
575625X:
N1010,
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