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Abstract: No abstract text available
Text: The module without a baseplate: A reliable and cost-effective solution Patrick Baginski, Field Application Engineer, Vincotech GmbH Abstract Power modules serve a wide and diverse range of purposes. For some applications, power density is a key factor. For others, efficiency or price may
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Abstract: No abstract text available
Text: KNC new ceramics features • Available in custom shapes and sizes • Original 3D forming process can combine hole, step, convex and concave, chase and thread shapes • Two types of material available • Features heat resistance, chemical resistance, anti-wear and insulation
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300gf
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KOA Speer Electronics
Abstract: Vickers Al2O3 heat transfer coefficient
Text: ,/$ OFXDFSBNJDT /&8 GFBUVSFT s Available in custom shapes and sizes s Original 3D forming process can combine hole, step, convex and concave, chase and thread shapes s Two types of material available s Features heat resistance, chemical resistance, anti-wear and insulation
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300gf
10-6/K)
KOA Speer Electronics
Vickers
Al2O3 heat transfer coefficient
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Al2O3 heat transfer coefficient
Abstract: 2512 resistor
Text: Understanding The Basic Thermal Properties Of SMT Devices By Scott B Durgin Principal Engineer International Manufacturing Services, Inc. IMS Introduction Ensuring optimal RF performance (that is, mechanical, thermal and electrical performance) of a surface-mount technology (SMT) ceramic device requires the careful
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Abstract: No abstract text available
Text: SKiM301TMLI12E4B Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 279 A Ts = 70 °C 213 A Ts = 25 °C 311 A Ts = 70 °C 252 A 300 A 900 A -20 . 20 V 10 µs -40 . 175 °C Values
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SKiM301TMLI12E4B
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SKim 304 GD
Abstract: semikron automotive inverter SKIM wind inverter SKIM 63 K4096 SKiM406GD066HD SKIM4 SKiM63
Text: SKiM406GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 383 A Ts = 70 °C 304 A 400 A ICnom ICRM ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Ts = 25 °C 320 A Ts = 70 °C 249 A 300 A VGES
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SKiM406GD066HD
SKim 304 GD
semikron automotive inverter
SKIM
wind inverter
SKIM 63
K4096
SKiM406GD066HD
SKIM4
SKiM63
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SKIM459GD12E4
Abstract: No abstract text available
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C 438 A Ts = 70 °C 347 A 450 A VGES
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SKiM459GD12E4
SKIM459GD12E4
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Abstract: No abstract text available
Text: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 899 A Ts = 70 °C 715 A 900 A ICnom ICRM ICRM = 2xICnom 1800 A -20 . 20 V 6 µs -40 . 175 °C Ts = 25 °C 670 A Ts = 70 °C 521 A 900 A VGES
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SKiM909GD066HD
KiM909GD066HD
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semikron automotive inverter
Abstract: k4096 SKiM63 semikron skim Al2O3 heat transfer coefficient C342A
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 587 A Ts = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Ts = 25 °C 441 A Ts = 70 °C 342 A 400 A VGES
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SKiM606GD066HD
semikron automotive inverter
k4096
SKiM63
semikron skim
Al2O3 heat transfer coefficient
C342A
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C521A
Abstract: K4096 semikron automotive inverter SKiM909GD066HD semikron skim temperature sensor ic SKiM93
Text: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 899 A Ts = 70 °C 715 A 900 A ICnom ICRM ICRM = 2xICnom 1800 A -20 . 20 V 6 µs -40 . 175 °C Ts = 25 °C 670 A Ts = 70 °C 521 A 600 A VGES
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SKiM909GD066HD
C521A
K4096
semikron automotive inverter
SKiM909GD066HD
semikron skim
temperature sensor ic
SKiM93
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SKIM
Abstract: SKIM45 SKiM93 wind inverter SKiM459GD12E4 Al2O3 heat transfer coefficient c347a
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C 438 A Ts = 70 °C 347 A 450 A VGES
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SKiM459GD12E4
SKIM
SKIM45
SKiM93
wind inverter
SKiM459GD12E4
Al2O3 heat transfer coefficient
c347a
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Untitled
Abstract: No abstract text available
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 587 A Ts = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Ts = 25 °C 441 A Ts = 70 °C 342 A 600 A VGES
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KiM606GD066HD
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semikron automotive inverter
Abstract: K4096 wind inverter k 4096 SKiM63 SKIM306GD12E4
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 365 A Ts = 70 °C 296 A 300 A ICnom ICRM ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C 285 A Ts = 70 °C 225 A 300 A VGES
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SKiM306GD12E4
semikron automotive inverter
K4096
wind inverter
k 4096
SKiM63
SKIM306GD12E4
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wind inverter
Abstract: C139A semikron automotive inverter diode 153 Al2O3 heat transfer coefficient SKiM93
Text: SKiM609GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM 93 Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C
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SKiM609GAR12E4
wind inverter
C139A
semikron automotive inverter
diode 153
Al2O3 heat transfer coefficient
SKiM93
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Untitled
Abstract: No abstract text available
Text: SKiM609GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C 139 A Ts = 70 °C 110 A 600 A
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SKiM609GAR12E4
iM609GAR12E4
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semikron automotive inverter
Abstract: ic 4050 semikron skim k 4096 diode 153
Text: SKiM609GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM 93 Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C
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SKiM609GAL12E4
semikron automotive inverter
ic 4050
semikron skim
k 4096
diode 153
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Infineon technology roadmap for IGBT
Abstract: 120 degree conduction mode of an inverter hybrid automobile inverter silicon carbide JFET 600V igbt dc to dc boost converter SiC IGBT High Power Modules Infineon technology roadmap for mosfet silicon carbide j-fet Hybrid Systems SiC JFET
Text: Semiconductors in Hybrid Drives Applications - A survey lecture Ingo Graf, Mark Nils Münzer* Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany *Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Tel.: +49- 0 2902-764-1141, Fax: +49-(0)2902-764-71141 e-mail: ingo.graf@infineon.com
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D-59581
D-85579
Infineon technology roadmap for IGBT
120 degree conduction mode of an inverter
hybrid automobile inverter
silicon carbide JFET
600V igbt dc to dc boost converter
SiC IGBT High Power Modules
Infineon technology roadmap for mosfet
silicon carbide j-fet
Hybrid Systems
SiC JFET
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variable resistor 10w
Abstract: Automotive Power Electronics
Text: Thick Film - Application Specific Thick Film Application Specific Capabilities ✁ ✁ ✁ ✁ ✁ Design without limits Todays engineers are pressed to design around a series of standard, off-theshelf products, limiting creativity in design and ultimately the capabilities and
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K612
Abstract: underfill FR4 epoxy dielectric constant 3.2 Dielectric Constant Silicon Nitride K810 FR4 substrate height and thickness ltcc chip fine line bga thermal cycling reliability
Text: Bourns Microelectronic Modules Packaging Solutions Device Mounting Technology Surface Mount Technology Surface mounting is still the most common and economical approach for many applications. Bourns® Microelectronic Module products offer the latest in surface mount technology:
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2M/MM0405
K612
underfill
FR4 epoxy dielectric constant 3.2
Dielectric Constant Silicon Nitride
K810
FR4 substrate height and thickness
ltcc chip
fine line bga thermal cycling reliability
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Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . PHP KEY BENEFITS • High purity ceramic substrate • Power rating to 2.5 W • Resistance range: 10 W to 30 kW • Resistor tolerance to ± 0.1 % • TCR to ± 25 ppm/°C • Flame resistant UL 94 V-0 • Lead Pb -free and lead terminations available
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2002/95/EC
02-May-11
VMN-PT0250-1105
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inverter welding machine circuit board
Abstract: LRGUT400F120C IGBT ZVT Full bridge MOSFET welding INVERTER ZVT Full bridge transformer IGBT WA960 ZVT full bridge pwm controller zvt boost converter ADVANCED POWER TECHNOLOGY EUROPE resonant converter for welding
Text: APT9904 By Geoff Dolan, Denis Grafham, and Jose Saiz 48kW RESONANT CONVERTER FOR X-RAY MACHINES USES HIGH SPEED POWER MODULES WITH INTEGRAL LIQUID COOLING Presented at PCIM Europe 1999, Nürnberg Germany 8kW RESONANT CONVERTER FOR X-RAY MACHINES USES HIGH
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APT9904
B-1330
F-33700
inverter welding machine circuit board
LRGUT400F120C
IGBT ZVT Full bridge
MOSFET welding INVERTER
ZVT Full bridge transformer IGBT
WA960
ZVT full bridge pwm controller
zvt boost converter
ADVANCED POWER TECHNOLOGY EUROPE
resonant converter for welding
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land pattern 2512
Abstract: FLIR 2512 package resistor 10R0 thermal imaging 2512 resistor flir system
Text: PHP Vishay Thin Film High Power Thin Film Wraparound Chip Resistor FEATURES • • • • • • High purity ceramic substrate Power rating to 2.5 W Resistance range 10 Ω to 30 kΩ Resistor tolerance to ± 0.1 % TCR to ± 25 ppm/°C Flame resistant UL 94 V-0
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land pattern 2512
FLIR
2512 package resistor
10R0
thermal imaging
2512 resistor
flir system
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schematic e.m.p
Abstract: ECONOPACK Bridge Rectifier, 50A, 600V
Text: Bulletin I27148 01/03 EMP50P12B PIM+ Package: EMP Features: Power Module: • • • • NPT IGBTs 50A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.15Vtyp @ 50A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology
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15Vtyp
78Vtyp
50ppm/
EMP50P12B
schematic e.m.p
ECONOPACK
Bridge Rectifier, 50A, 600V
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ECONOPACK
Abstract: 100C EMP50P12B inverter 3 phases schematic e.m.p 250uH
Text: EMP50P12B EMP50P12B PIM+ Package: EMP Features: Power Module: • • • • NPT IGBTs 50A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.15Vtyp @ 50A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology Low diode VF (1.78Vtyp @ 50A, 25°C)
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EMP50P12B
15Vtyp
78Vtyp
50ppm/
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ECONOPACK
100C
inverter 3 phases
schematic e.m.p
250uH
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