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    AL22V Search Results

    AL22V Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    PAL22V10-12DM/BV Rochester Electronics PAL22V10 - 24 Pin TTL/CMOS Versatile PAL Device Visit Rochester Electronics Buy
    PAL22V10-12DM/B Rochester Electronics PAL20L10 - Electrically Erasable PAL Device Visit Rochester Electronics Buy
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    AL22V Price and Stock

    Lattice Semiconductor Corporation GAL22V10D-10LPN

    IC PLD 10MC 10NS 24DIP
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    Bristol Electronics GAL22V10D-10LPN 9
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    Flip Electronics GAL22V10D-10LPN 28,800
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    Lattice Semiconductor Corporation GAL22V10D-15LPI

    IC PLD 10MC 15NS 24DIP
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    Win Source Electronics GAL22V10D-15LPI 1,349
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    Lattice Semiconductor Corporation GAL22V10D-10LPI

    IC PLD 10MC 10NS 24DIP
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    Lattice Semiconductor Corporation GAL22V10D-25QJN

    IC PLD 10MC 25NS 28PLCC
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    Lattice Semiconductor Corporation GAL22V10D-25LJN

    IC PLD 10MC 25NS 28PLCC
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    AL22V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


    Original     		PDF 750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4

    22v10 gal

    Abstract: GAL22V10G
    Text: Lattice Semiconductor AL22V10 Family G A L I S V IO G AL22V10 Corporation FE A TU R E S • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS III Advanced CMOS Technology


    OCR Scan     		PDF GAL22V10 AL22V10 AL26C 22V10 100ns 22v10 gal GAL22V10G

    L22V10

    Abstract: AL22V10
    Text: Lattice FEATURES G AL22V10/883 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax =166 MHz — 7ns Maximum from Clock Input to Data Output — TTL Compatible 12 mA Outputs


    OCR Scan     		PDF 22V10 100ms) Testability28-Pin 24-Pin 28-Pin L22V10 AL22V10

    18v10

    Abstract: GAL 18v10 programming Guide
    Text: Lattice Semiconductor Corporation G A L 2 2 V 1 0 F a m ily G AL18V10 G AL22V10 G AL26C V12 ” FEATURES • HIGH PERFORMANCE E ^M O S* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS* 111Advanced CMOS Technology


    OCR Scan     		PDF AL18V10 AL22V10 AL26C 11Advanced 22V10 18v10 GAL 18v10 programming Guide

    RT6105

    Abstract: LATTICE plsi architecture 3000 SERIES speed isp synario LATTICE plsi architecture 3000 SERIES GAL22V10B use circuit isplsi device layout
    Text: Lattice G AL22V10/883 High Performance E2CMOS PLD Generic Array Logic , ! Semiconductor i •Corporation F U N C T IO N A L B L O C K D IA G R A M FEA TU RES • HIGH PERFORMANCE E!CMOS TECHNOLOG Y — 10 ns Maxim um Propagation Delay — Fmax = 1 6 6 MHz


    OCR Scan     		PDF AL22V10/883 22V10 1-800-LATTICE pDS2102M-PC1 pDS2102M-SN1 102M-PC2 pDS1102M-SN1 pDS3302M-PC2 pDS1120M-PC1 RT6105 LATTICE plsi architecture 3000 SERIES speed isp synario LATTICE plsi architecture 3000 SERIES GAL22V10B use circuit isplsi device layout

    AMPAL22V10

    Abstract: No abstract text available
    Text: A m P A L 2 2 V 1 0-1 5 24-Pin IM O X III7“ Program m able Array Logic P R E L IM IN A R Y Distinctive Characteristics • • • • • • • • • 15-ns perform ance Increased logic pow er — up to 22 inputs and 10 outputs Increased product term s — average 12 per output


    OCR Scan     		PDF 24-Pin 15-ns 28-pin WF022301 AMPAL22V10

    gal22v10b-15

    Abstract: No abstract text available
    Text: LATTICE SEMICONDUCTOR bflE D 5 3 8 ^ 4 ^ 00026*11 214 « L A T Lattice G A L 2 2 V 1 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 200 MHz


    OCR Scan     		PDF 22V10 GAL22V10 GAL22V10B-15/-25Q: gal22v10b-15

    Untitled

    Abstract: No abstract text available
    Text: AL22V1 OB/883 AL22V10/883 Lattice High Performance E2CMOS PLD FUN CT IO N A L BLO C K DIAGRAM FEATURES • HIGH PERFORMANCE E^CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 8ns Maximum from Clock Input to Data Output — TTL Compatible 12 mA Outputs


    OCR Scan     		PDF GAL22V1 OB/883 GAL22V10/883 22V10 100ms) 962-89841023A 24-Pin GAL22V10-25LD/883 5962-8984104LA

    Untitled

    Abstract: No abstract text available
    Text: AL22V10 Lattice High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FEATURES FUNCTIONAL BLOCK DIAGRAM HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.5 ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10 22V10 Tested/100% GAL22V1 OB-15/-25Q:

    Untitled

    Abstract: No abstract text available
    Text: LAT T IC E S E M I C O N D U C T O R bfiE D Lattice 0 D D 3 G2 4 E4T AL22V10/883 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz


    OCR Scan     		PDF GAL22V10/883 22V10 28-Pin AL22V10B-15LR/883 962-89841033A 24-Pin AL22V10B-20LD/883 5962-8984102LA

    TRANSISTOR SMD T1P

    Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
    Text: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products


    OCR Scan     		PDF accuram29C676 07606C Am7202A Am7203A Am7204A Am7205A TRANSISTOR SMD T1P schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement

    GAL22V10B

    Abstract: GAL22V10 GAL22V10B-7LP GAL22V10C GAL22V10C-7LJ GAL22V10C-7LP GAL22V10B-15LJ GAL22V10C-10LP lattice 22v10 al22v10
    Text: AL22V10 Lattice High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 200 MHz — 4 ns Maximum from Clock Input to Data Output — UitraMOS® Advanced CMOS Technology


    OCR Scan     		PDF GAL22V10 22V10 100ms) GAL22V10B-15/-25Q: GAL22V10B GAL22V10B-7LP GAL22V10C GAL22V10C-7LJ GAL22V10C-7LP GAL22V10B-15LJ GAL22V10C-10LP lattice 22v10 al22v10

    GAL22V10B

    Abstract: No abstract text available
    Text: AL22V10B AL22V10 : : : :| L ad t l tl li UP CO •■■■■■ High Performance E2CMOS PLD F U N C T IO N A L B L O C K D IA G R A M FE A T U R E S • HIGH PERFORMANCE E2CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5 ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10B GAL22V10 22V10 100ms) GAL22V10

    GAL22V10-25LP

    Abstract: GAL22V10-15LP GAL22V10-20LP gal22v10b15lpi GAL22V10-25LPI lattice 22v10 programming specification GAL22V10-20LPI GAL22V10B15LP GAL22V10B-15U GAL22V10-15L
    Text: AL22V10B AL22V10 t i PC O :L d I IIÜ •■■■■■ FEATURES High Performance E2CMOS PLD F U N C T IO N A L B L O C K D IA G R A M • HIGH PERFORMANCE E’ CMOS» TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 105 MHz — 7 ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10B GAL22V10 22V10 100ms) 24-Pin 28-Lead GAL22V10B-15LPI GAL22V10-25LP GAL22V10-15LP GAL22V10-20LP gal22v10b15lpi GAL22V10-25LPI lattice 22v10 programming specification GAL22V10-20LPI GAL22V10B15LP GAL22V10B-15U GAL22V10-15L

    Untitled

    Abstract: No abstract text available
    Text: LATTICE SEMICONDUCTOR böE » • SBÔb'îM'J □DDS'îlO TTb « L A T AL22V10 Lattice In-System Program m able E2C M O S PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • IN-SYSTEM PROGRAMMABLE 5-VONLY — 4-Wire Serial Programming Interface


    OCR Scan     		PDF ispGAL22V10 22V10

    GAL22V10-20LP

    Abstract: GAL22V10-15LP gal22v10-15
    Text: Lattice Semiconductor G A L 22 V 1 0B AL22V10 Corporation High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES •HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 105 MHz — 7 ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10 22V10 GAL22V10-20LP GAL22V10-15LP gal22v10-15

    Untitled

    Abstract: No abstract text available
    Text: Lattice G A L 2 2 L V 1 0 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maxim um Propagation Delay — Fmax = 250 MHz — 3 ns Maxim um from Clock Input to Data O utput


    OCR Scan     		PDF 22V10 GAL22LV10C) GAL22LV10D) DDD5001 GAL22LV10 GAL22LV1

    PAL22V10

    Abstract: PD3024 DAL22V10 AMPAL22V10/A february 1996
    Text: COM’L: -7/10/15 AL22V10 Family, AL22V10/A 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As fast as 7.5-ns propagation delay and 91 MHz fMAX external ■ 10 Macrocells programmable as registered or combinatorial, and active high or active low to


    OCR Scan     		PDF PAL22V10 AmPAL22V10/A 24-Pin 28-pin 16559c-18 25752b PD3024 DAL22V10 AMPAL22V10/A february 1996

    Untitled

    Abstract: No abstract text available
    Text: AL22V10/883 Lattice High Performance E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 1 6 6 MHz — 7ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10/883 22V10 Tested/100% 100ms) L22V10/883 GAL22V10 MIL-STD-883 GAL22V10D-1

    Untitled

    Abstract: No abstract text available
    Text: AL22V 10 ; •; ; ; ; Semiconductor . . Z ï . ï Corporation I In-System Programmable EzCMOS PLD _ Generic Array Logic e atu re s F u n c tio n a l B lo c k Oiagra? • IN-SYSTEM PROGRAMMABLE™ 5-V ONLY — 4-Wire Serial Programming Interface


    OCR Scan     		PDF ispGAL22V ispGAL22V10C 22V10 ispGAL22V10

    SR 13003

    Abstract: SI 13003 13003 PAL22V10-12 PAL22V10 X 13003 13003 h pal 005a pal 007a PC 13003
    Text: COM’L : -7/10/15 MIL: -12/20 AL22V10 Family, AL22V10/A Advanced Micro Devices 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz Im a x ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to


    OCR Scan     		PDF PAL22V10 AmPAL22V10/A 24-Pin 24-pln 28-pln 3003-022A SR 13003 SI 13003 13003 PAL22V10-12 X 13003 13003 h pal 005a pal 007a PC 13003

    icc 312

    Abstract: No abstract text available
    Text: AL22V10B/883C AL22V10/883C Lattice Semiconductor Corporation High Performance EzCMOS PLD FE A TU R E S F U N C T IO N A L B LO C K D IA G R A M •HIGH PERFORMANCE EJCMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 8ns Maximum from Clock Input to Data Output


    OCR Scan     		PDF GAL22V10B/883C GAL22V10/883C 22V10 100ms) 28-Pin 24-Pin icc 312

    gal22v10b

    Abstract: GAL22V10B-25LD
    Text: Lattice AL22V10 /8 8 3 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORM ANCE E2CMOS TECHNOLOG Y — 15 ns Maxim um Propagation Delay — Fm ax = 62.5 MHz — 8ns Maxim um from C lock Input to Data Output


    OCR Scan     		PDF 22V10 24-Pin MIL-STD-883 GAL22V10B-15LD/883 GAL22V10B-15LR/883 GAL22V10B-20LD/883 GAL22V10B-20LR/883 GAL22V10B-25LD/883 GAL22V10B-30LD/883 gal22v10b GAL22V10B-25LD

    QAL22V10-30L

    Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
    Text: AL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor AL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating


    OCR Scan     		PDF bS0112b D0b7b45 GAL22V10, 24-pin GAL22V10 tl/l/10406-19 tl/l/10406-20 TL/L/10406-21 QAL22V10-30L PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL Gate Array Logic