CM100MXA-24S
Abstract: CM100MXa 5456 rectifier
Text: CM100MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AJ AK AG D E F K G J H K L K L K K L K M K AA AB C K AH DETAIL "A"
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CM100MXA-24S
Amperes/1200
CM100MXA-24S
CM100MXa
5456 rectifier
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CSTBT igbt
Abstract: No abstract text available
Text: CM100MXA-24S NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"
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CM100MXA-24S
Amperes/1200
CSTBT igbt
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Untitled
Abstract: No abstract text available
Text: CM100MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"
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CM100MXA-24S
Amperes/1200
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ZENER A19
Abstract: DIODE 1J DIODE A19 ZENER DIODES E-1
Text: ZY 1 . ZY 200 2W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 6 > + 5 < Absolute Maximum Ratings Symbol Conditions Axial lead diode
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RS2A
Abstract: No abstract text available
Text: 1.5A SURFACE MOUNT FAST RECOVERY RECTIFIER RS2A~RS2K 1.5A Surface Mount Fast Recovery Rectifier Features • • • • Low profile surface mounted package Fast recovery time for high efficiency Glass passivated junction Plastic package has underwriters laboratory
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DO-214AA
MIL-STD-750,
RS2A
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TB1010
Abstract: TB1010 bridge tb106 aj rectifier epoxy 5000 taitron TB1005 TB101 TB102 TB104 TB108
Text: SINGLE-PHASE BRIDGE RECTIFIER TB1005 ~ TB1010 10A Single-Phase Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds, 0.375" 9.5mm lead length,
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TB1005
TB1010
MIL-STD-202E
TB101
TB102
TB104
TB106
TB108
TB1010
TB1010 bridge
tb106
aj rectifier
epoxy 5000 taitron
TB1005
TB101
TB102
TB104
TB108
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1N40
Abstract: diode 1N40 datasheet diode 1n40 DO204AL 1N4001G 1N4007G DO-204AL
Text: 1.0A GENERAL PURPOSE SILICON RECTIFIER 1N4001G~1N4007G 1.0A General Purpose Silicon Rectifier Features • • • • • Glass passivated junction Low forward voltage drop Low leakage current High forward surge current capability High temperature soldering guaranteed 265°C/10 seconds
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1N4001G
1N4007G
DO-204AL,
MIL-STD-202E,
012Ounce,
DO204AL
DO-41)
1N40
diode 1N40 datasheet
diode 1n40
DO204AL
1N4007G
DO-204AL
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Untitled
Abstract: No abstract text available
Text: AJ ABRIDGED VERSION SSI 33P3733A jitim systems 8-26.5 Mbit/s Read Channel w/Pit Mark Pulse Qualifier A TDK Group/Company February 1996 DESCRIPTION • Wide bandwidth, high precision full-wave rectifier • Programmable LEVEL pin time constant with separate MO data and emboss registers
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OCR Scan
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33P3733A
64-Lead
33P3733A-CGT
33P3733A-CGT
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Untitled
Abstract: No abstract text available
Text: ER 1A.ER IM Superschnelle Si-Gleichrichter für die Oberflächenmontage Superfast Switching Surface Mount Si-Rectifier 0.6 A Nominal current Nennstrom 1 i 1 ! Isfö o aj 1 1 1 I 1 » 1 ! 50.300 V Repetitive peak reverse voltage Periodische Spitzensperrspannung
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OCR Scan
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DO-214AA
UL94V-0
R0D1RS14
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2659N
Abstract: No abstract text available
Text: jmm a KmmJI ! aj m h I j m l jmmm SL^JI I European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2659 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides VWK July 1996 D 2659 N Electrical properties
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OCR Scan
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D2659N2
2659N
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vp22
Abstract: No abstract text available
Text: International Government and Space Products I8R Rectifier Control Integrated Circuits Part Number VS Offset VBS, VCC IOUT Supply Voltage Supply Voltage Sink. Source V (AJ •> (V| Fax on Demand Number High & Low Side Driver LCC I R 2 I I0 E 4 -4 t o 400
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OCR Scan
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MO-036AB
601KSJ
M0-036AA
2130D
MO-Q38AB
44-Lead
vp22
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PDF
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Untitled
Abstract: No abstract text available
Text: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte
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2209N
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1809N
Abstract: No abstract text available
Text: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 1809 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte
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OCR Scan
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D1809N
1809N
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PDF
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Untitled
Abstract: No abstract text available
Text: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5809 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte
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D34AC
Abstract: 70MT80KB 70MT120K 90MT100KB 70MT120KB 70MT160KB
Text: International lO R Rectifier Bridges 1FSM Part Number V RRM ' o @ TC V (A} (C) VF » @ I FM 50 H i (V) (A) (A) M H i R QK{DC) 'RM (A) (°C/W) Gl/AJ Notes Fax on Case Demand Outline Number Key Three-Phase 60MT100KB 1000 60 85 1.75 100 350 370 0.37 ? 8 ft
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60MT100KB
60MT120KB
60MT140KB
60MT160KB
70MT80KB
70MT100KB
70MT120KB
70MT140KB
70MT160KB
90MT80KB
D34AC
70MT120K
90MT100KB
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3fs 4a
Abstract: No abstract text available
Text: •Fast-Recovery Rectifier Diodes AjasoMe Maximum Rating î Type No. V rm 10 IrsM <V <AJ A) Î] r stg 1^) Vf <V> V{/<A> m a*1' max trrl «íftᣠmax trr2 (#iS) (Center-tap type) 0.6 30 600 RH 1Z + 150 1.35 10 4.0 m ax . Typ«»to. FMU-12S.R 200 -14S.R
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FMU-12S
-G263
3fs 4a
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Diode FAJ 32
Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
Text: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package
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O-247AC
C-607
IRFPF40,
IRFPF42
T-39-13
C-608
Diode FAJ 32
diode c604 st
c608 A diode
IRFPF40
20V n-Channel Power MOSFET
c608 e diode
irf 607
diode lg 47a
7A, 100v fast recovery diode
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jrm 45
Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Text: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1
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1B01S
1B02S
1B04S
1B005
1KAB05H
fKAB10E
1KAB10EL3
jrm 45
jrm A 45
DIODE 1B
diode 60 31
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ST1900C
Abstract: t16 400 2900 29000 180s04p
Text: International IO R Rectifier Phase Control SCR v MtM/ Part Number ' tsm V DKM 1RMS V (A) l T(AV) @Tc (A) ro (b) % (a) (A) >61 ^ @ *T M dv/dt R0 J-HS (V) (Aj (V) (A) (V/ps) (°C/W) (A) Notes Fox on Case Demand Outline Number Key Thyristors A-36 (R-Puk) ST I9 0 0 C 4 5 R 0
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1900C46R0
ST1900C48RO
ST19OOC5OR0
ST19OOC52R0
ST2100C35R0
ST2100C36RÛ
ST21OOC38R0
ST21OOC4OR0
ST2100C42R0
ST2600C20R0
ST1900C
t16 400
2900
29000
180s04p
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4746a
Abstract: in 4746a
Text: ABRIDGED VERSION AJ SSI 32P4746/4746A d c n s y s k m Read Channel with 1,7 ENDEC, 4-burst Servo s A TDK Group/Company January 1996 DESCRIPTION FEATURES The SSI 32P4746/4746A devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a
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32P4746/4746A
32P4746/4746A
32P4746
32P4746A
64-Lead
32P4746-CGT
32P4746A-CGT
4746a
in 4746a
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mip 0253
Abstract: 33R3750
Text: ABRIDGED VERSION AJ sm m svskm s A TDK G ro u p /C o m p a n y SSI 33P3701 8-48 Mbit/s Magneto Optical Read Channel with PPM/PWM Pulse Qualification Advance Information February 1996 DESCRIPTION PULSE DETECTOR The SSI 33P3701 device is a high performance BiCMOS single chip read channel IC that contains all
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OCR Scan
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33P3701
33P3701
mip 0253
33R3750
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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E86015
Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Text: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays
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30S3
Abstract: KS926S2 T760 T930
Text: KS926S2 5 a 'Ê Ê ± 'h W t > ÿ '( * — F : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER Features • ffi£2£pBp Surface mount device. • teVp Low V y Connection Diagram Super high speed switching. • y n m iM M it h « High reliability by planer design
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KS926S2
l95t/R89
30S3
T760
T930
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