M28W231
Abstract: No abstract text available
Text: M28W231 2 Mbit 256Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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M28W231
256Kb
100ns
TSOP40
M28W231
AI02004B
120ns
150ns
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wp 39
Abstract: AN933 M28F211 M28F410 M28F411 M28W231
Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.
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AN933
M28F2xx
M28F4xx
T6-U20)
wp 39
AN933
M28F211
M28F410
M28F411
M28W231
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1N914
Abstract: M28W231
Text: M28W231 2 Mbit 256Kb x8, Block Erase Low Voltage Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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PDF
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M28W231
256Kb
100ns
M28W231
1N914
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