m628032
Abstract: SOJ28 1370E
Text: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION
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M628032
PSDIP28
M628032
SOJ28
1370E
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25x16
Abstract: ST24C16 ST24W16 ST25C16 ST25W16
Text: ST24C16, ST25C16 ST24W16, ST25W16 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions
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ST24C16,
ST25C16
ST24W16,
ST25W16
ST24x16
ST25x16
ST24W16
ST24C16
ST24/25C16
25x16
ST24C16
ST25C16
ST25W16
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M48T35Y
Abstract: M48T35 SOH28
Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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M48T35
M48T35Y
28-pin
M48T35:
M48T35Y:
PCDIP28
M48T35Y
M48T35
SOH28
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M27C160
Abstract: Q15A
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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M27C160
50sec.
FDIP42W
M27C160
Q15A
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DS1642
Abstract: M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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M48T02
M48T12
24-pin
PCDIP24
M48T02:
M48T12:
DS1642
M48T02
M48T12
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micromodule
Abstract: ST1305 DS0501 DS-0501
Text: ST1305 High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control BRIEF DATA • Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: Figure 1. Delivery Forms – 16 bits of Circuit Identification – 48 bits of Card Identification
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ST1305
DS0502
ST1305
DS0501
micromodule
DS0501
DS-0501
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AN923
Abstract: M48T35 M48T35Y SOH28
Text: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME
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M48T35
M48T35Y
PCDIP28
SOH28
M48T35:
M48T35Y:
AN923
M48T35
M48T35Y
SOH28
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M48T58
Abstract: M48T58Y SOH28
Text: M48T58 M48T58Y 64 Kbit 8Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME
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M48T58
M48T58Y
M48T58:
M48T58Y:
28-LEAD
M48T58
M48T58Y
SOH28
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DS1220
Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
DS1220
M48Z02
M48Z12
24-Pin Plastic DIP
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Untitled
Abstract: No abstract text available
Text: ST24/25C08, ST24C08R ST24/25W08 SERIAL 8K 1K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x08 versions – 2.5V to 5.5V for ST25x08 versions – 1.8V to 5.5V for ST24C08R version only
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ST24/25C08,
ST24C08R
ST24/25W08
ST24x08
ST25x08
ST24C08R
ST24W08
ST25W08
150mil
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DS1225
Abstract: M48Z08 M48Z18 M4Z28-BR00SH M4Z32-BR00SH SOH28 ram DS1225
Text: M48Z08 M48Z08Y, M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT
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M48Z08
M48Z08Y,
M48Z18
28-pin
M48Z08:
M48Z18/Z08Y:
PCDIP28
DS1225
M48Z08
M48Z18
M4Z28-BR00SH
M4Z32-BR00SH
SOH28
ram DS1225
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M48T35
Abstract: STMicroelectronics
Text: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35
M48T35Y
M48T35:
M48T35Y:
STMicroelectronics
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
SOH28
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M27C160
Abstract: PDIP42 PLCC44 Q15A SDIP42
Text: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)
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M27C160
FDIP42W
PDIP42
SDIP42
M27C160
PDIP42
PLCC44
Q15A
SDIP42
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Untitled
Abstract: No abstract text available
Text: XZ7 SG S-TH O M SO N * IM. HD»IHI miS !0 §i M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 12,15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil
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M628032
PSDIP28
SOJ28
M628032
in8032
SOJ28
0DbTE23
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Untitled
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7#«, HO glS ilLIOT®iD(gi ST24C08, ST25C08 ST24W08, ST25W08 SERIAL ACCESS 8K (1K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION > SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions
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ST24C08,
ST25C08
ST24W08,
ST25W08
ST24x08
ST25x08
ST24W08
ST24/25C08,
ST24/25W08
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Untitled
Abstract: No abstract text available
Text: M48Z512 M48Z512Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4 Mb 512K x 8 ZEROPOWER SRAM NOT FOR NEW DESIGN INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the
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M48Z512
M48Z512Y
LDIP32
M48Z512Y
M48Z512/512Y
M48Z512A/512AY)
M48Z512,
PMLDIP32-
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Untitled
Abstract: No abstract text available
Text: / 3 T SCS-THOMSON *7 / ST24C01, ST25C01 ST24W01, ST25W01 SERIAL ACCESS 1K 128 x 8 EEPROM 00 • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24 versions - 2.5V to 5.5V for ST25 versions ■ HARDWARE WRrTE CONTROL VERSIONS:
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ST24C01,
ST25C01
ST24W01,
ST25W01
ST24W01
ST24/25C01,
ST24/25W01
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Untitled
Abstract: No abstract text available
Text: £ = 7 ^ 7 # » S G S -T H O M S O N M 4 8 T 0 2 M M 4 8 T 1 2 M illL IM t M Q Ig i CMOS 2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY DATE,
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M48T02
M48T12
M48T02,
M48T12
PCDIP24
PCDIP24
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Untitled
Abstract: No abstract text available
Text: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ M48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and
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M48Z02
M48Z12
M48Z02:
M48Z12:
M48Z02/12
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Untitled
Abstract: No abstract text available
Text: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the
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M48Z2M1
M48Z2M1Y
48Z2M
M48Z2M1Y
LDIP36
M48Z2M1/2M1Y
204ce,
M48Z2M1,
PMLDIP36-
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Untitled
Abstract: No abstract text available
Text: /T T SGS-THOMSON M48T02 A 7 # . [M»[g[LI gmMD(gS_ M48T12 16Kb (2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
1N5817
MBRS120T3
M48T02,
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Untitled
Abstract: No abstract text available
Text: M41T11 512 bit 64b x8 Serial Access TIM EKEEPER SRAM • 2.0V to 5.5V SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC SWITCH-OVER and DESELECT
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M41T11
150mil
M41T11
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Untitled
Abstract: No abstract text available
Text: ST24C08, ST25C08 ST24W08, ST25W08 8 Kbit Serial l2C Bus EEPROM with User-Defined Block Write Protection • 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions
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ST24C08,
ST25C08
ST24W08,
ST25W08
ST24x08
ST25x08
ST24W08
150mil
ST24/25C08,
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