AGR21030EU Search Results

AGR21030EU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
AGR21030EU		Agere Systems	FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR21030EU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
Untitled Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF PB03-095RFPP PB03-070RFPP)
J605 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605
2.4 ghz mosfet Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-C101A Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A
AGR21030E Abstract: AGR21030EF AGR21030EU JESD22-A114 Text: Preliminary Data Sheet May 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF carr10-712-4106) DS02-277RFPP AGR21030EF AGR21030EU JESD22-A114