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    AFT27S006N Search Results

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    AFT27S006N Price and Stock

    NXP Semiconductors AFT27S006NT1

    RF MOSFET LDMOS 28V PLD-1.5W
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    DigiKey AFT27S006NT1 Reel 1,000 1,000
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    AFT27S006NT1 Cut Tape 134 1
    • 1 $11.66
    • 10 $10.715
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    AFT27S006NT1 Digi-Reel 1
    • 1 $11.66
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    Avnet Americas AFT27S006NT1 Reel 10 Weeks 1,000
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    Mouser Electronics AFT27S006NT1 1,324
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    Newark AFT27S006NT1 Cut Tape 504 1
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    Rochester Electronics AFT27S006NT1 10,000 1
    • 1 $8.82
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    Richardson RFPD AFT27S006NT1 712 1
    • 1 $12.19
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    Avnet Silica AFT27S006NT1 12 Weeks 1,000
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    Chip1Stop AFT27S006NT1 Cut Tape 1,000
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    EBV Elektronik AFT27S006NT1 4,000 12 Weeks 1,000
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    NXP Semiconductors AFT27S006N-1000M

    RF MOSFET
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    DigiKey AFT27S006N-1000M Bulk 1
    • 1 $624.02
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    Avnet Americas AFT27S006N-1000M Box 1
    • 1 $643.5
    • 10 $630
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    • 1000 $558
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    Mouser Electronics AFT27S006N-1000M
    • 1 $607.81
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    Newark AFT27S006N-1000M Bulk 1
    • 1 $643.5
    • 10 $625.5
    • 100 $589.5
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    Richardson RFPD AFT27S006N-1000M 1
    • 1 $620.27
    • 10 $603.95
    • 100 $573.04
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    Freescale Semiconductor AFT27S006NT1

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    Quest Components AFT27S006NT1 800
    • 1 $12.1876
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    • 100 $12.1876
    • 1000 $8.1251
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    AFT27S006N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AFT27S006NT1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF NCH 65V 2690MHZ PLD1.5W Original PDF

    AFT27S006N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF