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    AF SOT 23 Search Results

    AF SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    AF SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40LT16

    Abstract: No abstract text available
    Text: BC817-16LT1 BC817-25LT1 BC817-40LT1 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE


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    PDF BC817-16LT1 BC817-25LT1 BC817-40LT1 OT-23 OT-23 MIL-STD-202E 40LT16

    IC104

    Abstract: No abstract text available
    Text: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5


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    PDF OT-23-5 Q62702- Dec-04-1996 IC104

    BC817

    Abstract: BC807 BC817-16 BC817-25 BC817-40 6a. sot 23 pnp marking 6A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16 BC817-25 BC817-40 TRANSISTOR NPN SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage


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    PDF OT-23 BC817-16 BC817-25 BC817-40 OT-23 BC807 100mA 500mA 500mA, BC817 BC807 BC817-16 BC817-25 6a. sot 23 pnp marking 6A

    100MHZ

    Abstract: BC817-16 BC817-25 BC817-40
    Text: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


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    PDF BC817-16 BC817-25 BC817-40 OT-23 OT-23 MIL-STD-202E 100MHZ BC817-16 BC817-25 BC817-40

    bc857

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER


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    PDF OT-23 BC856A, BC857A, BC858A, OT-23 BC856 BC857 BC858 bc857

    BC857

    Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER


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    PDF OT-23 BC856A BC857A, BC858A, OT-23 BC856 BC857 BC858 BC857 BC858 BC856 BC856B BC857 Plastic BC857C BC857A BC857B BC858A

    DKs smd marking

    Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
    Text: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1


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    PDF BCX42 OT-23 DKs smd marking marking AF BCX42 high voltage swiching transistors marking AF SOT

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage


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    PDF OT-23 BC818-16 BC818-25 OT-23 BC818-40 100mA 300mA 500mA, 500mA

    bc818

    Abstract: BC818-16 BC818-25 BC818-40
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage


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    PDF OT-23 BC818-16 BC818-25 OT-23 BC818-40 100mA 300mA 500mA, 500mA bc818 BC818-16 BC818-25

    bc817

    Abstract: SOT-23 6C BC817-25
    Text: BC817-16 BC817-25 BC817-40 SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features — For general AF applications — — — — High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)


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    PDF BC817-16 BC817-25 BC817-40 OT-23 OT-23 BC807 100mA 500mA 500mA, bc817 SOT-23 6C

    bc847

    Abstract: BC848 BC846 BC846A BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A,B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications


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    PDF OT-23 BC846A BC847A, BC848A, OT-23 BC846 BC847 BC848 bc847 BC848 BC846 BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A

    6E SMD

    Abstract: marking AF SOT-23 6F BC818A
    Text: Transistors SMD Type NPN Silicon AF Transistors KC818A BC818A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High collector current. 1 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High current gain. +0.05


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    PDF KC818A BC818A) OT-23 KC818A-16 KC818A-25 KC818A-40 6E SMD marking AF SOT-23 6F BC818A

    BC859

    Abstract: No abstract text available
    Text: BC859 SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS PNP FEATURES * Ideally suited for automatic insertion * For switching and AF amplifier applications SOT-23 COLLECTOR MECHANICAL DATA * * * * 3 BASE Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed


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    PDF BC859 OT-23 OT-23 MIL-STD-202E BC859

    BC847B1F

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A, B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications


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    PDF OT-23 BC846A, BC847A, BC848A, OT-23 BC846 BC847 BC848 BC847B1F

    smd marking 5G

    Abstract: MARKING 5E marking AF
    Text: Transistors SMD Type PNP Silicon AF Transistors KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


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    PDF KC808A BC808A) OT-23 KC808A-16 KC808A-25 KC808A-40 smd marking 5G MARKING 5E marking AF

    Untitled

    Abstract: No abstract text available
    Text: BC808 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    PDF BC808 OT-23 OT-23 BC818 -300mA -500mA, -50mA -10mA, 50MHz

    smd 9FB

    Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
    Text: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


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    PDF KC807 BC807) OT-23 300mA KC807-16 KC807-25 KC807-40 smd 9FB marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40

    DHs SOT-23

    Abstract: DFs SOT-23 sep 67a BCW67 das sot 23 67A SOT 23 6
    Text: BCW 67, BCW 68 PNP Silicon AF Transistors 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 65, BCW 66 NPN 2 1 Type Marking Pin Configuration BCW 67A DAs 1=B 2=E 3=C SOT-23 BCW 67B


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    PDF OT-23 VPS05161 Sep-30-1999 EHP00401 EHP00402 DHs SOT-23 DFs SOT-23 sep 67a BCW67 das sot 23 67A SOT 23 6

    bc857

    Abstract: BC857A 3F TRANSISTOR transistor pnp bc858 transistor 3j SOT-23 marking 3f transistor 3f sot-23 BC856B marking pc sot-23 transistor
    Text: BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO


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    PDF BC856A BC857A BC858A OT-23 OT-23 BC856 BC857 BC858 3F TRANSISTOR transistor pnp bc858 transistor 3j SOT-23 marking 3f transistor 3f sot-23 BC856B marking pc sot-23 transistor

    Bc817 sot-23

    Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
    Text: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


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    PDF KC817 BC817) OT-23 Jun10 300mA KC817-16 KC817-25 KC817-40 Bc817 sot-23 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817

    KC807A-25

    Abstract: 5C smd BC807A marking AF smd 5c KC807A-40 marking 5A
    Text: Transistors SMD Type PNP Silicon AF Transistors KC807A BC807A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


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    PDF KC807A BC807A) OT-23 KC807A-16 KC807A-25 KC807A-40 KC807A-25 5C smd BC807A marking AF smd 5c KC807A-40 marking 5A

    marking AF

    Abstract: BC818
    Text: Transistors SMD Type NPN Silicon AF Transistors KC818 BC818 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1


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    PDF KC818 BC818) OT-23 300mA KC818-16 KC818-25 KC818-40 marking AF BC818

    EHs SOT-23

    Abstract: EFs SOT-23
    Text: BCW 65, BCW 66 NPN Silicon AF Transistor 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP 2 1 Type Marking Pin Configuration BCW 65A EAs 1=B 2=E 3=C SOT-23 BCW 65B


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    PDF OT-23 VPS05161 Sep-30-1999 EHP00394 EHP00395 EHs SOT-23 EFs SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 BC808 OT-23 BC818 -100mA -300mA -500mA, -50mA -10mA,