equivalent of transistor 8050
Abstract: 22V10Z 16V8Z 22V10 PAL CMOS device 16V8 20V8 PAL10H8 PAL16C1 PAL16R8 PALCE16V8
Text: Advanced Micro Devices Minimizing Power Consumption with Zero-Power PLDs Application Note Minimizing Power Consumption with Zero-Power PLDs Advanced Micro Devices Application Note Zero-Power Programmable Logic Devices PLDs are advanced PAL devices designed with ultra low-power,
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16V8Z
22V10Z
22V10
equivalent of transistor 8050
22V10 PAL CMOS device
16V8
20V8
PAL10H8
PAL16C1
PAL16R8
PALCE16V8
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Untitled
Abstract: No abstract text available
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
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thermistor ntc 50k
Abstract: NTC 15K APT0406 thermistor 68k ADVANCED POWER TECHNOLOGY EUROPE ptc 96016 thermistor ntc 15k NTC Thermistor NTC 203 PTC NTC SENSORS
Text: Application note APT0406 November 2004 Using NTC Temperature Sensors Integrated into Power Modules Pierre-Laurent Doumergue R&D Engineer Advanced Power Technology Europe Chemin de Magret 33700 Mérignac, France Introduction Most APTE Advanced Power Technology
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APT0406
thermistor ntc 50k
NTC 15K
APT0406
thermistor 68k
ADVANCED POWER TECHNOLOGY EUROPE
ptc 96016
thermistor ntc 15k
NTC Thermistor
NTC 203
PTC NTC SENSORS
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800w class d circuit diagram schematics
Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.
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IRF540NS
Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
IRF540NS
IRF540NL
3F smd transistor
MOSFET IRF540n
AN-994
IRF540N
4.5v to 100v input regulator
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IRF540NL
Abstract: IRF540NS 3F smd transistor AN-994 IRF540N MOSFET IRF540n
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
IRF540NL
IRF540NS
3F smd transistor
AN-994
IRF540N
MOSFET IRF540n
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LRG5AP
Abstract: No abstract text available
Text: 2011-05-04 Advanced Power TOPLED Datasheet LR G5AP released Advanced Power TOPLED Plus packs outstanding brightness into a mid-power package, making it the perfect light source for thin applications that need bright and homogeneous lighting. Advanced Power TOPLED Plus verfügt über eine
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JESD22-A114-D
D-93055
LRG5AP
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schematic diagram inverter 12v to 24v 1000w
Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.
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Untitled
Abstract: No abstract text available
Text: 2011-07-08 Rev. 1.0 Advanced Power TOPLED Datasheet LS G6SP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an
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JESD22-A114-F
D-93055
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Untitled
Abstract: No abstract text available
Text: 2012-06-11 Advanced Power TOPLED Datasheet Version 1.0 LCY G6SP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an
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JESD22-A114-F
D-93055
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LW G6CP
Abstract: LWG6CP
Text: 2012-08-07 Advanced Power TOPLED Datasheet Version 1.2 LW G6CP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an
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JESD22-A114-F
D-93055
LW G6CP
LWG6CP
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Untitled
Abstract: No abstract text available
Text: 2011-05-04 Advanced Power TOPLED Datasheet LA G5AP Advanced Power TOPLED Plus packs outstanding brightness into a mid-power package, making it the perfect light source for thin applications that need bright and homogeneous lighting. Advanced Power TOPLED Plus verfügt über eine
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D-93055
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yellow590
Abstract: No abstract text available
Text: 2011-05-04 Advanced Power TOPLED Datasheet LY G5AP Advanced Power TOPLED Plus packs outstanding brightness into a mid-power package, making it the perfect light source for thin applications that need bright and homogeneous lighting. Advanced Power TOPLED Plus verfügt über eine
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D-93055
yellow590
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Untitled
Abstract: No abstract text available
Text: 2013-09-24 Advanced Power TOPLED Datasheet Version 1.0 LA G6SP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an
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617rve:
D-93055
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LAG6SP
Abstract: LA G6SP-6E8E-23-3B4A-140-R18-Z-XX
Text: 2012-03-27 Advanced Power TOPLED Datasheet LA G6SP Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. Advanced Power TOPLED verfügt über eine platzsparende Bauform mit einer breiten Spanne an Helligkeit und hoher Lichtausbeute.
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JESD22-A114-F
D-93055
LAG6SP
LA G6SP-6E8E-23-3B4A-140-R18-Z-XX
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ATC800B680JT
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
ATC800B680JT
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
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transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
transistor 1800MHz
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UF634L
Abstract: a/kvp 81A DIODE
Text: UNISONIC TECHNOLOGIES CO., LTD UF634 Preliminary Power MOSFET ADVANCED POWER MOSFET DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS ON , improved gate charge and so on. FEATURES
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UF634
UF634
UF634L-TA3-T
UF634G-TA3-T
O-220
QW-R502-454
UF634L
a/kvp 81A DIODE
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transistor 1800MHz
Abstract: r.f. amplifier 30mhz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
r.f. amplifier 30mhz
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rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
ERJ-3GEYJ821
ERJ-3GEYJ391
transistor 1800MHz
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RFHA1000
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS121114
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
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