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    ADVANCED POWER ELECTRONICS Search Results

    ADVANCED POWER ELECTRONICS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    PowerPoint-Presenter Renesas Electronics Corporation PowerPoint Presenter Reference Design Visit Renesas Electronics Corporation
    TPN8R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN19008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    ADVANCED POWER ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AP42T03GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Low Gate Charge Fast Switching Characteristic ID G 30V 22m 30A S Description The Advanced Advanced Power Power


    Original     		PDF AP42T03GP O-220 O-220 42T03GP

    4002T

    Abstract: No abstract text available
    Text: AP4002T RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON Fast Switching Characteristics Simple Drive Requirement ID G 600V 5 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP4002T 400mA 4002T 4002T

    Untitled

    Abstract: No abstract text available
    Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60AT 160mA 01L60AT

    AP01L60T

    Abstract: No abstract text available
    Text: AP01L60T Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60T 160mA AP01L60T

    Untitled

    Abstract: No abstract text available
    Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Simple Drive Requirement Fast Switching G -30V RDS ON 50m ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP9435GH/J O-252 O-252/TO-251 O-251 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60T 160mA

    Untitled

    Abstract: No abstract text available
    Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low Gate Drive Surface Mount Package BVDSS ID G2 G1 185m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2625GY OT-26 OT-26 12REF 37REF 90REF 20REF 95REF

    Untitled

    Abstract: No abstract text available
    Text: AP3403H/J Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS -30V RDS ON 200mΩ ID - 10A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP3403H/J O-252 O-252/TO-251 O-251 100ms Fig11.

    AP2304AN

    Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
    Text: AP2304AN Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2304AN OT-23 OT-23 100ms AP2304AN N-CHANNEL MOSFET 30V 2A SOT-23

    AP01L60T

    Abstract: No abstract text available
    Text: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60T 160mA AP01L60T

    AP9435GH

    Abstract: No abstract text available
    Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP9435GH/J O-252 O-252/TO-251 O-251 100us 100ms AP9435GH

    AP2623Y

    Abstract: No abstract text available
    Text: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623Y OT-26 OT-26 180/W AP2623Y

    Untitled

    Abstract: No abstract text available
    Text: AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 1.8V gate drive Simple Drive Requirement RDS ON D ID Surface mount package Description 90m 2.5A S SOT-23 20V D G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2322GN OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Small Package Outline ID Surface Mount Device 30V 117m 2.5A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2304AGN-HF OT-23 OT-23

    AP01L60AT

    Abstract: No abstract text available
    Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60AT 160mA AP01L60AT

    AP01L60AT

    Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
    Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP01L60AT 160mA 01L60AT AP01L60AT RoHS-compliant Product Advanced MOSFET BVDSS 01L60

    Untitled

    Abstract: No abstract text available
    Text: AP2318GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive D Small Outline Package BVDSS 30V RDS ON 1.5 ID Surface Mount Device 500mA S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2318GEN 500mA OT-23 OT-23

    AP2625Y

    Abstract: No abstract text available
    Text: AP2625Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 135mΩ ID G2 G1 BVDSS - 2.3A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2625Y OT-26 OT-26 100ms 180/W AP2625Y

    4002T

    Abstract: AP4002T AP4002 RoHS-compliant Product Advanced MOSFET BVDSS
    Text: AP4002T RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 5Ω ID G 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP4002T 400mA 4002T 4002T AP4002T AP4002 RoHS-compliant Product Advanced MOSFET BVDSS

    AP2306N

    Abstract: No abstract text available
    Text: AP2306N Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 32mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2306N OT-23 OT-23 100ms AP2306N

    Untitled

    Abstract: No abstract text available
    Text: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623GY OT-26 OT-26

    9435GH

    Abstract: AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate
    Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP9435GH/J O-252 O-252/TO-251 O-251 O-251 9435GJ 9435GH AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate

    AP9963GP

    Abstract: No abstract text available
    Text: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced


    Original     		PDF AP9963GP O-220 100us 100ms AP9963GP

    AP9963GP

    Abstract: No abstract text available
    Text: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced


    Original     		PDF AP9963GP O-220 100us 100ms AP9963GP