Untitled
Abstract: No abstract text available
Text: NANALOG WDEVICES ADSP-2111 User's Manual Architecture - ~~-~-~-~-~-~- You may contact the Digital Signal Processing Division in the following ways: By contacting your local Analog Devices Sales Representative For Marketing information, call 617 461-3881 in Norwood,
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ADSP-2111
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst
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EDI2AG272129V
2x128Kx72,
2x128Kx72
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
s129V
EDI2AG272129V85D1*
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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aa11
Abstract: 14mmx20mm GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2CG272128V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
positi08)
EDI2CG272128V85D1*
EDI2CG272128V9D1*
EDI2CG272128V12D1
EDI2CG272128V15D1
aa11
14mmx20mm
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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GVT7164B19
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT7164B19 64K X 18 SYNCHRONOUS BURST SRAM 64K x 18 SRAM SYNCHRONOUS BURST SRAM +5V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7164B19
GVT7164B19
7164B19
access/12ns
access/15ns
access/20ns
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GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Abstract: No abstract text available
Text: EDI2AG272128V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst
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EDI2AG272128V
2x128Kx72,
2x128Kx72
EDI2AG272128VxxD1
2x128Kx72.
14mmx20mm
s128V
EDI2AG272128V85D1*
EDI2AG272128V9D1*
EDI2AG272128V10D1
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Abstract: No abstract text available
Text: EDI2CG264128V 2x128Kx64, 3.3V Sync/Sync Burst Flow-Through FEATURES DESCRIPTION • 2x128Kx64 Synchronous, Synchronous Burst The EDI2CG264128VxxD1 is a Synchronous/Synchronous Burst SRAM, 64 position DIMM 144 contacts Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2CG264128V
2x128Kx64,
2x128Kx64
EDI2CG264128VxxD1
14mmx20mm
EDI2CG264128V85D1*
EDI2CG264128V9D1*
EDI2CG264128V12D1
EDI2CG264128V15D1
2x128Kx64
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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AN1223
Abstract: MCM6264C MCM67B518 64KX1 MC6440
Text: MOTOROLA Order this document by MCM/D SEMICONDUCTOR TECHNICAL DATA AN1223 A Zero Wait State Secondary Cache for Intel’s Pentium Prepared by: Michael Peters, FSRAM Applications Engineer Due to the increased complexity and sheer memory size requirements of new and forthcoming operating systems
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AN1223
MC64400/D*
AN1223
MCM6264C
MCM67B518
64KX1
MC6440
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EDI2CG272128V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2CG272128V ADVANCED* 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM DESCRIPTION FEATURES 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module,
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
14mmx20mm
EDI2CG272128V85D1*
2x128Kx72
EDI2CG272128V9D1*
EDI2CG272128V12D1
EDI2CG272128V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM DESCRIPTION FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Sequential Burst MODE Clock Controlled Registered Bank Enables E1#, E2#
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EDI2AG272129V
2x128Kx72
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
EDI2AG272129V85D1*
2x128Kx72
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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burst SRAM
Abstract: EDI2CG272128V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2CG272128V 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
14mmx20mm
EDI2CG272128V85D1*
EDI2CG272128V9D1*
EDI2CG272128V12D1
EDI2CG272128V15D1
2x128Kx72
burst SRAM
EDI2CG272128V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2CG272128V
Abstract: CK66 GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2CG272128V ADVANCED* 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM DESCRIPTION FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Access Speed s : TKHQV = 8.5, 9, 12, 15ns
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
14mmx20mm
EDI2CG272128V85D1*
2x128Kx72
EDI2CG272128V9D1*
EDI2CG272128V12D1
EDI2CG272128V
CK66
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM DESCRIPTION FEATURES The EDI2AG272129VxxD1 is a Synchronous/ Synchronous Burst SRAM, 72 position SO DIMM 144 contacts Module, organized as 2x128Kx72. The Module
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EDI2AG272129V
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
2x128K
EDI2AG272129V85D1*
2x128Kx72
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2AG272128V-D1
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2AG272128V-D1 ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module con tains four
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EDI2AG272128V-D1
2x128Kx72
EDI2AG272128VxxD1
2x128Kx72.
14mmx20mm
EDI2AG272128V85D1*
4x256Kx72
EDI2AG272128V9D1*
EDI2AG272128V10D1
EDI2AG272128V-D1
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2AG272128V-D1
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2AG272128V-D1 ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear Burst Mode Clock Controlled Registered Bank Enables E1#, E2#
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EDI2AG272128V-D1
2x128Kx72
EDI2AG272128VxxD1
2x128Kx72.
14mmx20mm
EDI2AG272128V85D1*
4x256Kx72
EDI2AG272128V9D1*
EDI2AG272128V10D1
EDI2AG272128V-D1
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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DL156
Abstract: AN1223 MCM6264C MCM67B518 AN-12232
Text: Order this document by MCM/D Freescale Semiconductor AN1223 A Zero Wait State Secondary Cache for Intel’s Pentium Freescale Semiconductor, Inc. Prepared by: Michael Peters, FSRAM Applications Engineer Due to the increased complexity and sheer memory size
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AN1223
DL156
AN1223
MCM6264C
MCM67B518
AN-12232
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AN1223
Abstract: MCM6264C MCM67B518 Analysis on Intel Pentium Processor L1 Cache SRAM DL156
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM/D SEMICONDUCTOR TECHNICAL DATA AN1223 A Zero Wait State Secondary Cache for Intel’s Pentium Freescale Semiconductor, Inc. Prepared by: Michael Peters, FSRAM Applications Engineer Due to the increased complexity and sheer memory size
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AN1223
AN1223/D
AN1223
MCM6264C
MCM67B518
Analysis on Intel Pentium Processor L1 Cache SRAM
DL156
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GVT7164B18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT7164B18 64K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM 64K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7164B18
GVT7164B18
7164B18
access/15ns
access/20ns
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GALVANTECH
Abstract: GVT7132B36 DQ25d
Text: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132B36
GVT7132B36
32768x36
7132B36
access/15ns
access/20ns
GALVANTECH
DQ25d
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AA01
Abstract: aa11
Text: EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Sequential Burst MODE • Clock Controlled Registered Bank Enables E1\, E2 • Clock Controlled Byte Write Mode Enable (BWE\)
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EDI2AG27265V
EDI2AG27265VxxD1
y1999
EDI2AG27265V85D1*
EDI2AG27265V9D1*
EDI2AG27265V10D1
EDI2AG27265V12D1
2x64Kx72
AA01
aa11
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Untitled
Abstract: No abstract text available
Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear and Sequential Burst Support via MODE pin • Clock Controlled Registered Bank Enables E1\, E2\ •
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EDI2CG27264V
EDI2CG27264VxxD2
2CG27264V
EDI2CG27264V85D1*
EDI2CG27264V9D1*
EDI2CG27264V10D1
EDI2CG27264V12D1
2x64Kx72
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GVT7164B36
Abstract: 7164b36
Text: GALVANTECH, INC. GVT7164B36 64K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM 64K x 36 SRAM +3.3V POWER SUPPLY, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family employs high-speed, low power CMOS designs using
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GVT7164B36
GVT7164B36
536x36
7164B36
access/10ns
access/11ns
access/15ns
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GVT71128B18
Abstract: No abstract text available
Text: PRELIMINARY GALVANTECH, INC. GVT71128B18 128K X 18 SYNCHRONOUS BURST SRAM 128K x 18 SRAM SYNCHRONOUS BURST SRAM +3.3V POWER SUPPLY , REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128B18
GVT71128B18
072x18
71128B18
access/10ns
access/11ns
access/15ns
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Untitled
Abstract: No abstract text available
Text: JÄN 1 7 1992 DSP Microcomputer with Host Interface Port ADSP-2111 ANALOG ► DEVICES FUNCTIONAL BLOCK DIAGRAM FEATURES Complete DSP Microcomputer 60 ns Instruction Cycle Time from 16.67 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM
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OCR Scan
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ADSP-2111
ADSP-2100
80C51,
ADSP-2101
Inst2111
ADSP-2111KG-52
ADSP-2111KG-66
ADSP-2111KS-52
ADSP-2111KS-66
ADSP-2111BG-52
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Untitled
Abstract: No abstract text available
Text: ADSP-2111 March 1990 For current information contact Analog Devices at 617 461-3881 FEATURES 77 ns Instruction Cycle with Sustained 13 MIPS Performance 100-Pin PGA and 100-Lead PQFP ANALOG DEVICES This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices
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OCR Scan
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ADSP-2111
100-Pin
100-Lead
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