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    ADDR 1 DATA BYTE PROGRAM 5555H AAH 2AAAH 55H Search Results

    ADDR 1 DATA BYTE PROGRAM 5555H AAH 2AAAH 55H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

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    MX29L1611

    Abstract: No abstract text available
    Text: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns


    Original     		PDF MX29L1611 16M-BIT 100ns 200ms MX29L1611

    Untitled

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 30ns Page access depth: 16 bytes/8 words, page address


    Original     		PDF MX29L1611 16M-BIT 100ns 200ms PM0511

    MX29L3211

    Abstract: 29L3211
    Text: ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns


    Original     		PDF MX29L3211 32M-BIT 100ns/120ns 200ms JAN/19/2000 MAY/15/2000 NOV/06/2001 MX29L3211 29L3211

    29L1611-75

    Abstract: 29l1611-10
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


    Original     		PDF MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms FEB/10/2000 FEB/21/2000 FEB/29/2000 29L1611-75 29l1611-10

    29L1611-75

    Abstract: MX29L1611
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


    Original     		PDF MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms JAN/18/2000 FEB/10/2000 FEB/21/2000 29L1611-75 MX29L1611

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100/120ns Fast pagemode access time: 30/40ns Page access depth: 16 bytes/8 words, page address


    Original     		PDF MX29L1611 16M-BIT 100/120ns 30/40ns 200ms SEP/09/1998 NOV/26/1998 JUN/28/1999 JUL/15/1999 JUL/22/1999

    mxic

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


    Original     		PDF MX29L1611G 16M-BIT 90ns/100ns/120ns 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 SEP/11/2002 PM0604 mxic

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture


    Original     		PDF MX29L1611G 16M-BIT 90ns/120ns 200ms PM0604 APR/18/2000 JUL/10/2001

    MX29L1611G

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/120ns Sector erase architecture


    Original     		PDF MX29L1611G 16M-BIT 90ns/120ns 200ms 29L1611G-10-- 29L1611G-90 PM0604 APR/18/2000 MX29L1611G

    Untitled

    Abstract: No abstract text available
    Text: MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. • Full voltage range 2.7 to 3.6V write, erase and read


    Original     		PDF MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms a/2000 FEB/21/2000 FEB/29/2000

    5555H

    Abstract: No abstract text available
    Text: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.


    Original     		PDF MX29L1611 16M-BIT MX29L1611-75/10/12) 100/30ns, 120/30ns. MX29L1611-90) 200ms JAN/18/2000 FEB/10/2000 FEB/21/2000 5555H

    29F1611

    Abstract: MX29F1611
    Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 29F1611 MX29F1611

    MX29L1611GPC-90

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


    Original     		PDF MX29L1611G 16M-BIT 90ns/100ns/120ns 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 SEP/11/2002 NOV/21/2002 PM0604 MX29L1611GPC-90

    29L3211

    Abstract: 29L321 MX29L3211 MX29L3211MC-10
    Text: ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns


    Original     		PDF MX29L3211 32M-BIT 100ns/120ns 200ms PM0641 JAN/19/2000 MAY/15/2000 29L3211 29L321 MX29L3211 MX29L3211MC-10

    MX29F1611

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


    Original     		PDF MX29F1611 16M-BIT 100/120/150ns 50/60/70ns 150ms MX29F1611

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000

    MX29L1611

    Abstract: MX29L1611G command-30H
    Text: ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns


    Original     		PDF MX29L1611G MX29L1611* 16M-BIT 90ns/100ns/120ns 29L1611PC-90/ 200ms APR/18/2000 JUL/10/2001 JAN/24/2002 MX29L1611 command-30H

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 100ns/120ns Sector erase architecture


    Original     		PDF MX29L1611G 16M-BIT 100ns/120ns 200ms MAR/23/1999 MAY/07/1999 PM0604

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		PDF MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A

    29F8100-12

    Abstract: MX29F8100
    Text: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns


    Original     		PDF MX29F8100 8/512K 120/150ns oper887 CA95131 29F8100-12 MX29F8100

    MX29F8100

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each


    Original     		PDF MX29F8100 8/512K bytes/64 100uA 120/150ns 44SOP MAR/08/1999 PM0262 MX29F8100

    MX29F1611

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		PDF MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 MX29F1611