4518 APPLICATION CIRCUITS
Abstract: M34518E8FP M34518E8SP M34518M2-XXXFP M34518M2-XXXSP M34518M4-XXXFP M34518M4-XXXSP M34518M6-XXXFP M34518M8-XXXFP MDB2
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4518 Group REJ03B0008-0200Z Rev.2.00 2003.04.15 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4518 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0008-0200Z
10-bit
4518 APPLICATION CIRCUITS
M34518E8FP
M34518E8SP
M34518M2-XXXFP
M34518M2-XXXSP
M34518M4-XXXFP
M34518M4-XXXSP
M34518M6-XXXFP
M34518M8-XXXFP
MDB2
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4584 Group
Abstract: 4584 FR20 FR21 FR22 M34584EDFP M34584MD-XXXFP transistor on 4584
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4584 Group REJ03B0010-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4584 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0010-0200Z
10bit
4584 Group
4584
FR20
FR21
FR22
M34584EDFP
M34584MD-XXXFP
transistor on 4584
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ad 156 transistor
Abstract: TMOS E-FET TMOS power FET MTW8N60E
Text: MOTOROLA Order this document by MTW8N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTW8N60E/D
O-247
ad 156 transistor
TMOS E-FET
TMOS power FET
MTW8N60E
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MMFT6N03HD
Abstract: h bridge ad 156 transistor
Text: MOTOROLA Order this document through Power Products Marketing SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT6N03HD HDTMOS Single N-Channel Field Effect Transistor Medium Power Surface Mount Products These medium power SOT–223 devices are an advanced series
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MMFT6N03HD
MMFT6N03HD/D*
MMFT6N03HD/D
MMFT6N03HD
h bridge
ad 156 transistor
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transistor BF422
Abstract: BF422
Text: Transys Electronics L I M I T E D NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C ) DESCRIPTION SYMBOL VALUE VCBO 250 Collector -Base Voltage
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BF422
transistor BF422
BF422
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2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as
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MMBR911LT1/D
MMBR911LT1
MPS911
226AA
A/500
MMBR911LT1
MMBR911LT1/D*
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BC368
Abstract: TO-92 plastic package transistors TRANSISTOR bc368
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W
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BC368
C-120
BC368
TO-92 plastic package transistors
TRANSISTOR bc368
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BC640-16
Abstract: BC640
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
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BC640-16
C-120
BC640-16
BC640
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BF422
Abstract: transistor bf422
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
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BF422
C-120
BF422
transistor bf422
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
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BF422
C-120
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application.
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BC640-16
C-120
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BC368
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 BPL TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF
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BC368
C-120
BC368
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BF422
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
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BF422
C-120
BF422
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369 TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W
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BC369
C-120
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BC368
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC368 BPL TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W
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BC368
C-120
BC368
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FZH 161
Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency
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AT-31625
OT-223
AT-31625
5965-5911E
FZH 161
FZH 111
FZH 181
transistor I 17-13 0773
CBC 184 transistor
FZH 175
S3230
FZH 165
FZH 165 b
fzh 171
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Untitled
Abstract: No abstract text available
Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0
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TP1220L,
TP/VP2020L,
BSS92_
TP1220L
TP2020L
VP2020L
BSS92
P-37994--
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HXTR-3685
Abstract: HXTR-3686 HXTR3685 HXTR 3685
Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package
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HXTR-3685
HXTR-3686
HXTR-3685
HPAC-85
HPAC-86
HXTR-3686
HXTR3685
HXTR 3685
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AT41400
Abstract: ad 156 transistor maximum gain 33 at 2.0 ghz
Text: m H EW LETT PACKARD AT-f 1400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features • • • Chip Outline Low NoiseFigure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High AssociatedGain: 14.5 dB typical at 2.0 GHz 10.5 dB typical at 4.0 GHz
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AT-41400
metal12
AT41400
ad 156 transistor
maximum gain 33 at 2.0 ghz
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2222A
Abstract: No abstract text available
Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.
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AT-31625
OT-223
AT-31625
1997H
5965-5911E
2222A
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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TA8559
Abstract: VK 200-09 59014 Silicon Power Cube SILVER-MICA FERROXCUBE VK200 rca 349 ai 016.3 arco 406
Text: File No. 579 RF Power Transistors Solid State Division 40953 40954 40955 1 .7 5 -, 1 0 -, and 25-W , 156-M Hz Silicon N -P -N Overlay Transistors '&ÊÊPw 3 r For High-Power V H F Am plifiers r ▼ Features • Designed fo r vhf marine transmitters 40953 JEDEC TO-39
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HF-44
156-MHz
RCA-40953,
409E4
TA8559
VK 200-09
59014
Silicon Power Cube
SILVER-MICA
FERROXCUBE VK200
rca 349
ai 016.3
arco 406
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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FMA10A
FMA11A
IMB10A
IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
rkm 33 transistor
bkd transistor
DTD133HKA
BKD C6
DTB133HKA
Transistor BJD
2SA1885
rkm 20 transistor
2SC5274
rkm transistor
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