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    ACS08 TRANSISTOR Search Results

    ACS08 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ACS08 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    acs08 Transistor

    Abstract: acs08 b3 smd transistor "silicon on sapphire" smd diode y4 SMD TRANSISTOR Y1 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR
    Text: ACS08MS Radiation Hardened Quad 2-Input AND Gate July 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level


    Original     		PDF ACS08MS MIL-PRF-38535 ACS08MS 25Micron acs08 Transistor acs08 b3 smd transistor "silicon on sapphire" smd diode y4 SMD TRANSISTOR Y1 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR

    acs08 Transistor

    Abstract: acs08 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR ACS08KMSR ACS08MS CDFP4-F14
    Text: ACS08MS Radiation Hardened Quad 2-Input AND Gate July 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level


    Original     		PDF ACS08MS MIL-PRF-38535 ACS08MS 25Micron acs08 Transistor acs08 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR ACS08KMSR CDFP4-F14

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    SMD TRANSISTOR A4 S

    Abstract: acs08 Transistor y2 smd transistor smd transistor A1 smd transistor b3 a4 smd transistor CDIP2-T14 smd transistor y3 A4 smd transistor A4 b3 smd transistor
    Text: H A R R IS X ACS08MS Semiconductor Radiation Hardened Quad 2-Input AND Gate juiy 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B


    OCR Scan     		PDF ACS08MS ACS08MS ACS257MS ACS08M SMD TRANSISTOR A4 S acs08 Transistor y2 smd transistor smd transistor A1 smd transistor b3 a4 smd transistor CDIP2-T14 smd transistor y3 A4 smd transistor A4 b3 smd transistor

    acs08 Transistor

    Abstract: b3 smd transistor y4 smd transistor smd transistor y3 smd transistor b3 smd transistor a4 y2 smd transistor a4 smd transistor smd transistor y2 smd transistor A1
    Text: ACS08MS Semiconductor Radiation Hardened Quad 2-Input AND Gate Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08M S is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level


    OCR Scan     		PDF ACS08MS MIL-PRF-38535 25Micron 100MeV/ ACS257MS 2390nm 2390nm 525nm acs08 Transistor b3 smd transistor y4 smd transistor smd transistor y3 smd transistor b3 smd transistor a4 y2 smd transistor a4 smd transistor smd transistor y2 smd transistor A1

    CDFP4-F14

    Abstract: No abstract text available
    Text: ACS08MS S ttftSESS Radiation Hardened Quad 2-Input AND Gate Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08M S is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level


    OCR Scan     		PDF ACS08MS MIL-PRF-38535 ACS08M 25Micron CDFP4-F14