ACRIAN RF POWER TRANSISTOR 300 W Search Results

ACRIAN RF POWER TRANSISTOR 300 W Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ACRIAN RF POWER TRANSISTOR 300 W Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GROUND BASED RADAR Abstract: AIRBORNE DME vimostm Text: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather	Original	1214-1400MHz 200uS GROUND BASED RADAR AIRBORNE DME vimostm	PDF
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30	PDF
acrian RF POWER TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.	OCR Scan	01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc	PDF
acrian RF POWER TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50 Text: DE\| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It	OCR Scan	-65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50	PDF
acrian RF POWER TRANSISTOR Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664 Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ \|j \|!\|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to	OCR Scan	TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664	PDF
acrian RF POWER TRANSISTOR Abstract: ACRIAN acrian RF POWER TRANSISTOR 300 w T-33-O acrian inc Text: n 18299 8 A C R I A N 97D 0 1229 INC T7 ACRIAN INC D T~— 33- O DE \| 0 1 0 2 ^ 0 DGDiaai 3 46110 GENERAL DESCRIPTION 10 WATTS - 28 VOLTS _ 1000 MHz The 46110 is a stable common emitter transistor capable of providing 10 watts of CW RF output power across the 500-1000 MHz frequency	OCR Scan		PDF
acrian RF POWER TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc Text: 0 182998 G EN ER A L ACRIAN INC 97D 01054 D V - 3 3 - /^ DME 375 D E S C R IPTIO N 375 WATTS - 50 VOLTS 1090 MHz The DME 375 is an internally matched, common base transistor capable of providing 375 watts of pulse RF output power at 10 microsecond pulse widths and 1 percent duty cycles across the	OCR Scan	10jisec DME375-3 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc	PDF
acrian RF POWER TRANSISTOR Abstract: BAL0204-125 225-400MHz Q12-200 0105-50 acrian TG T-33-15 acrian inc Text: 0182998 ACRIAN INC □IñSnñ 97D 01159 OODllST fl T-33-15 0204-125 GENERAL DESCRIPTION 125 WATTS - 28 VOLTS 2 25-400M H Z The 0204-125 balanced transistor is designed to operate Class, A, AB or C over the 225-400MHz frequency range. It is an improved drop-in replacement for the BAL0204-125.	OCR Scan	T-33-15 225-400MHz BAL0204-125. acrian RF POWER TRANSISTOR BAL0204-125 Q12-200 0105-50 acrian TG T-33-15 acrian inc	PDF
acrian RF POWER TRANSISTOR Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;\| 0 1 0 2 ^ 0 ^!jjj\|jjjgjgg 0DD1403 4 J ^0 \|j\|ijj\|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for	OCR Scan	0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc	PDF
acrian RF POWER TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.	OCR Scan	S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc	PDF