Transistor BC 457
Abstract: MCH185A100JK MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R
Text: SPA-1526Z Preliminary SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar
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SPA-1526Z
SOF-26
SPA-1526Z
SPA-1526Z-EVB1
850MHz
910MHz
SPA-1526Z-EVB2
Transistor BC 457
MCH185A100JK
MCH185A101JK
MCH185CN104KK
SOF-26
TAJA105K020R
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Transistor BC 457
Abstract: SOF-26 SPA1426Z POWER TRANSISTOR MCH185CN104KK TAJA105K020R bc 457 Transistor MCH185A221JK -1426Z
Text: SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier SPA-1426Z Preliminary 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar
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SPA-1426Z
SOF-26
SPA-1426Z
SPA-1426Z-EVB1
850MHz
910MHz
SPA-1426Z-EVB2
Transistor BC 457
SOF-26
SPA1426Z
POWER TRANSISTOR
MCH185CN104KK
TAJA105K020R
bc 457 Transistor
MCH185A221JK
-1426Z
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bc 303 transistor
Abstract: LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z
Text: Preliminary SPA-1426Z Product Description Sirenza Microdevices’ SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with
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SPA-1426Z
SPA-1426Z
co105883
SPA-1426Z-EVB1
910MHz
SPA-1426Z-EVB2
1960MHz
SPA-1426Z-EVB3
bc 303 transistor
LL1608-FS3N9
TAJA105K020R
MCH185A8R2JK
GTEK
MCH185CN104KK
ML200D
SOF-26
avg9
SPA1426Z
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spa1526
Abstract: No abstract text available
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SOF-26
SPA1526Z
SPA1526ZSQ
SPA1526ZSR
850MHz
spa1526
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Transistor BC 457
Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
Text: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs
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SPA-1426Z
SOF-26
SPA-1426Z
SOF-26
SPA-1426Z-EVB1
SPA-1426Z-EVB2
SPA-1426Z-EVB3
Transistor BC 457
MCH185CN104KK
TAJA105K020R
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SPA1426Z
Abstract: TAJA105K020R
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SPA1426Z
SOF-26
SOF-26
DS110610
SPA1426ZSQ
TAJA105K020R
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ML200D
Abstract: 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK
Text: Preliminary SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with
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SPA-1526Z
SPA-1526Z
co105847
SPA-1526Z-EVB1
910MHz
SPA-1526Z-EVB2
1960MHz
SPA-1526Z-EVB3
ML200D
64DPCH
SOF-26
TAJA105K020R
MCH185A100JK
l1303
spa152
MCH185A101JK
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MCH185A100JK
Abstract: 1000PPM
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SPA1526Z
SOF-26
SOF-26
SPA1526ZSQ
SPA1526ZSR
MCH185A100JK
1000PPM
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SPA-1426
Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SPA1426Z
SOF-26
SOF-26
Opt17]
DS120601
SPA-1426
Transistor BC 457
MCH185A8R2JK
MCH185A221JK
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Transistor BC 457
Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
Text: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs
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SPA-1526Z
SOF-26
SPA-1526Z
SOF-26
SPA-1526Z-EVB1
SPA-1526Z-EVB2
SPA-1526Z-EVB3
Transistor BC 457
bc 457 Transistor
MCH185A101JK
MCH185CN104KK
TAJA105K020R
MCH185A100JK
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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Untitled
Abstract: No abstract text available
Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs
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SPA1426Z
SOF-26
SPA1426Z
enha9421
DS120601
SPA1426ZSQ
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MCH185A100JK
Abstract: transistor Bc 540 pin transistor Bc 540
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SPA1526Z
SOF-26
SOF-26
Matchi9421
SPA1526ZSQ
MCH185A100JK
transistor Bc 540 pin
transistor Bc 540
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SPB-2026Z
Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated
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SPB2026Z
SPB2026Z
SOF-26
SPB2026ZSQ
SPB2026ZSR
SPB2026ZPCK1
SPB-2026Z
SPB-2026ZSR
ER39
s-parameters
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SPB-2026
Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Text: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
SOF-26
EDS-105436
SPB-2026
zo 107
TL 188 TRANSISTOR PIN DIAGRAM
SPB2026Z
SPB2026
0722
ER39
ML200D
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CMX998
Abstract: RF5110G ev9810 cmx981 CMX998 Calibration CMX981 dqpsk modulation tetra EV9980 TMS320VC5510 EV9810 PE0001
Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX998 with an RF5110G Power Amplifier Publication: AN/TwoWay/CFBL/998/1 January 2007 1 Introduction This document is intended as an aid to customers developing linear transmitters using the CMX998 integrated circuit[1] by demonstrating a typical ‘Cartesian Loop’ transmitter solution
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CMX998
RF5110G
AN/TwoWay/CFBL/998/1
CMX981
TMS320VC5510
CMX981.
CMX981
RF5110G
ev9810 cmx981
CMX998 Calibration
dqpsk modulation tetra
EV9980
EV9810
PE0001
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Untitled
Abstract: No abstract text available
Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated
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SPB2026Z
SOF-26
SPB2026Z
SPB2026ZSQ
SPB2026ZSR
1805MHz
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SPB2026Z
Abstract: SPB2026ZSR
Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features GaAs HBT p GaAs MESFET Applications V c c = 5V Functional Block Diagram SiGe BiCMOS
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SPB2026Z
SPB2026Z
SOF-26
SPB2026ZSQ
SPB2026ZSR
SPB2026ZPCK1
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SPB2026Z
Abstract: SPB-2026Z SPB-2026 SPB-2026Z-EVB3 ML200D SOF-26 spb2026zevb3 0.7GHz to 2.2GHz InGaP AMPLIFIER 1805-1880MHz power amplifier EDS-105436
Text: SPB-2026Z SPB-2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar
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SPB-2026Z
SOF-26
SPB-2026Z
SPB2026Z
SPB-2026Z-EVB1
1805-1880MHz
SPB-2026Z-EVB2
1930-1990MHz
SPB-2026
SPB-2026Z-EVB3
ML200D
SOF-26
spb2026zevb3
0.7GHz to 2.2GHz InGaP AMPLIFIER
1805-1880MHz power amplifier
EDS-105436
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ML200C
Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
Text: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with
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SPA-1526Z
EDS-105847
SPA-1526Z-EVB1
SPA-1526Z-EVB2
ML200C
7-27GHz
ER39
SPA1526Z
bc 303 transistor
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OV7740
Abstract: RE200B OmniVision CMOS Camera Module ov7740 Omnivision ov7740 CMOS image sensor JPEG PIR based human motion DETECTOR CIRCUIT DIAGRAM passive Infrared motion detector Sensor Pir RE200B RE200B nicera AT91SAM3S-LQFP100
Text: Passive InfraRed Reference Design PIRRD for SAM3S Motion Detector Camera 1. Scope This application note provides detailed directions and instructions to both hardware and software engineers building a low cost, yet powerful, Passive InfraRed Motion Detector Camera as found in building or home alarm and monitoring systems. The reference design is based on the SAM3S4C device.
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AT91SAM
com/products/at91/sam3s
1091A
10-Nov-10
OV7740
RE200B
OmniVision CMOS Camera Module ov7740
Omnivision ov7740
CMOS image sensor JPEG
PIR based human motion DETECTOR CIRCUIT DIAGRAM
passive Infrared motion detector
Sensor Pir RE200B
RE200B nicera
AT91SAM3S-LQFP100
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IC 7412
Abstract: 4fsk 4fsk modulation 4FSK modem IF
Text: CMX7143 CML Microcircuits Multi-Mode Wireless COMMUNICATION SEMICONDUCTORS Data Modem DATASHEET D/7143_FI2.0/2 December 2007 Advance Information FI-2.x 4FSK Packet Data Modem Features • Flexible bit rates • Multiple modulation types o FI-1.0: GMSK/GFSK modulation
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CMX7143
D/7143
48-pin
IC 7412
4fsk
4fsk modulation
4FSK modem IF
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CA9H-10K
Abstract: CA9H ca9h-1k CA9H-47K acp 100k
Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 BepTMKanbHbie noACTpoenHbie p e 3 M C T o p b i cepM M C A 9 H 9 mm. nMHeMHaa 5x2,5 mm 0,15 Bt 200 B ±20% ( b f lM a n a 3 0 H e 1 MO m -5 MO m ±30%) OT-25°CflO +70°C 240 ±5° n o f l C T p o e H H u e y m e p o f lM C T b i e p e 3 M C T o p b i C T a H fla p T a
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OCR Scan
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flMana30H
CA9H-100R
CA9H-250R
CA9H-470R
CA9H-10K
CA9H-25K
CA9H-47K
CA9H-100K
CA9H-250K
CA9H-470K
CA9H-10K
CA9H
ca9h-1k
CA9H-47K
acp 100k
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