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    Untitled

    Abstract: No abstract text available
    Text: ACE8212B Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is


    Original     		PDF ACE8212B ACE8212B

    Untitled

    Abstract: No abstract text available
    Text: ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is


    Original     		PDF ACE8212B ACE8212B