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Catalog Datasheet	MFG & Type	PDF	Document Tags
MOSFET Abstract: No abstract text available Text: ACE2301B P-Channel Enhancement Mode MOSFET Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are	Original	PDF	ACE2301B ACE2301B 100mR 120mR MOSFET

Catalog Datasheet

MFG & Type

PDF

Document Tags

MOSFET

Abstract: No abstract text available
Text: ACE2301B P-Channel Enhancement Mode MOSFET Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are

Original

PDF

ACE2301B ACE2301B 100mR 120mR MOSFET