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    AC125 DATA SHEET Search Results

    AC125 DATA SHEET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet
    MP-52RJ11SNNE-015 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft Datasheet

    AC125 DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pse jet THERMAL FUSE

    Abstract: Jet 2A 250v fuse SOC 8A fuse AC125 H-0032-2 pse jet 300 2.5A THERMAL FUSE Project Report of fire alarm using thermistor DC35VP11 DC35VP11CT soc 4a fuse
    Text: This catalog supersedes all prior catalogs. Date of issue: December 2004 SAFETY WARNINGS 1. Improper selection and use of products in this catalog, such as exceeding recommended established characteristics or maximum ratings or using in unsuitable operating conditions, may result in serious injury,


    Original     		PDF H-0014-2 H-0016-2 H-0017-2 H-0032-2 H-0048-2 H-0060 H-0084-2 BM-LQ-I-13 BM-LQ-I-15 BM-SS-I-14 pse jet THERMAL FUSE Jet 2A 250v fuse SOC 8A fuse AC125 H-0032-2 pse jet 300 2.5A THERMAL FUSE Project Report of fire alarm using thermistor DC35VP11 DC35VP11CT soc 4a fuse

    DDR3L-1866

    Abstract: MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 DDR3L-1866 MT41K256M16 MT41K1G4 MT41K512M8 901KB 96-ball FBGA 512M8 micron FBGA SDRAM

    DDR3L-1066

    Abstract: DDR3L-800 78-Ball TIS87
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


    Original     		PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 DDR3L-1066 DDR3L-800 78-Ball TIS87

    MT41K64M16

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks Description • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C


    Original     		PDF MT41K256M4 MT41K128M8 MT41K64M16 8192-cycle 09005aef833b7221 MT41K64M16

    MT41K128M16

    Abstract: 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


    Original     		PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270

    MT41K256M16

    Abstract: MT41K512M8RH-125 256M16 MT41K512M8 MT41K srt 8n ac130 sec AC135 MT41K512M8RH-125M MT41K512M8RH
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1GM4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3L-RS SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM


    Original     		PDF MT41K1GM4 MT41K512M8 MT41K256M16 09005aef8488935b MT41K256M16 MT41K512M8RH-125 256M16 MT41K512M8 MT41K srt 8n ac130 sec AC135 MT41K512M8RH-125M MT41K512M8RH

    MT41K

    Abstract: MT41K256M16 MT41K512M8 256M16 DDR3L DC90 25-micron DDR3L-1333
    Text: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM


    Original     		PDF MT41K512M8 MT41K256M16 09005aef8488935b MT41K MT41K256M16 MT41K512M8 256M16 DDR3L DC90 25-micron DDR3L-1333

    M471B5273DH0

    Abstract: No abstract text available
    Text: Rev. 1.31. Dec. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B5773DH0 M471B5273DH0 204pin 78FBGA K4B2G0846D 256Mbx8 512Mx64 M471B5273DH0

    MT41K256M16

    Abstract: No abstract text available
    Text: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features DDR3Lm SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM


    Original     		PDF MT41K512M8 MT41K256M16 09005aef8488935b MT41K256M16

    256M16

    Abstract: MT41K512M smd code marking ID MT41k micron
    Text: Preliminary‡ 4Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • • • • • Automatic self refresh ASR Write leveling Multipurpose register Output driver calibration


    Original     		PDF MT41K512M8 MT41K256M16 09005aef8488935b 256M16 MT41K512M smd code marking ID MT41k micron

    k4b1g1646g-bck0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133
    Text: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA k4b1g1646g-bck0 K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133

    K4B1G1646G-BCK0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133
    Text: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA K4B1G1646G-BCK0 K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133

    96-ball FBGA

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register


    Original     		PDF MT41K256M8 MT41K128M16 09005aef847d068f 96-ball FBGA

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64

    K4B2G16

    Abstract: K4B2G1646C-HCNB K4B2G1646C-HCK0 K4B2G1646C-HC
    Text: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646C 96FBGA K4B2G16 K4B2G1646C-HCNB K4B2G1646C-HCK0 K4B2G1646C-HC

    784038

    Abstract: ALS157 as04 78P4038 IE-784038-NS-EM1 IE-78K4-NS uPD784031 uPD784031Y uPD784038 uPD784038Y
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d88-6130 784038 ALS157 as04 78P4038 IE-784038-NS-EM1 IE-78K4-NS uPD784031 uPD784031Y uPD784038 uPD784038Y

    M471B5273EB0

    Abstract: M471B5773 K4B2G0846
    Text: Rev. 1.2. Apr. 2012 M471B5273EB0 204pin Unbuffered SODIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M471B5273EB0 204pin 78FBGA 125mV 135mv 125mV) 256Mbx8 512Mx64 K4B2G0846E M471B5273EB0 M471B5773 K4B2G0846

    M378B5173CB0

    Abstract: m378b5173 Samsung ddr3 1600 SDRAM
    Text: Rev. 1.1, Apr. 2012 M378B5173CB0 240pin Unbuffered DIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M378B5173CB0 240pin 78FBGA 125mV 135mv 125mV) 512Mbx8 K4B4G0846C-BC M378B5173CB0 m378b5173 Samsung ddr3 1600 SDRAM

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin 78FBGA 128Mbx8 256Mx64 K4B1G0846G-BC

    K4B1G1646G-BCK0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN
    Text: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA K4B1G1646G-BCK0 K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN

    K4B2G1646C-HCH9

    Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
    Text: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646C 96FBGA K4B2G1646C-HCH9 K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133

    K4B2G1646Q-BCK0

    Abstract: K4B2G1646q
    Text: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA K4B2G1646Q-BCK0 K4B2G1646q

    K4B4G0846q

    Abstract: No abstract text available
    Text: Rev.1.0, Jun. 2013 K4B4G0446Q K4B4G0846Q 4Gb Q-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446Q K4B4G0846Q 78FBGA K4B4G0846q