Untitled
Abstract: No abstract text available
Text: Low Ohmic - Current Sense Resistors Type KNP4 Series Type KNP4 Series Characteristics Electrical Maximum Current: Maximum Watts: Dielectric Withstand: KNP4-2A KNP4-7 22A 22A 3 7 1000V ac 1500V ac Resistance Range: R005 to R10 standard R001 Special Resistance Tolerances:
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R0031,
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UL1015 awg10
Abstract: E52653 awg12 AWG10 AWG14 AWG16 DF22 UL1015 awg12 R9950703
Text: •Product Specifications AWG10 Number of contacts 1 30A 2 25A 3 25A 4 22A 5 22A Specification UL/C-UL TÜV Current rating Ratings Voltage rating Item AWG12 25A 20A 20A 18A 18A AWG14 AWG16 20A 15A 18A 15A 18A 15A 15A 13A 15A 13A AC/DC 1000V AC/DC 600V AC/DC
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AWG10
AWG12
AWG14
AWG16
E52653
R9950703
ohm92
DF22R-1P-7
92DSA
UL1015 awg10
E52653
awg12
AWG10
AWG14
AWG16
DF22
UL1015 awg12
R9950703
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Untitled
Abstract: No abstract text available
Text: APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC 28 27 26 25
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APTM100VDA35T3G
APTM100VDA35T3Gâ
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SOT-227 heatsink
Abstract: APT0502 diode schottky 1000V 10a
Text: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT22M100JCU2
OT-227)
SOT-227 heatsink
APT0502
diode schottky 1000V 10a
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Untitled
Abstract: No abstract text available
Text: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT22M100JCU2
OT-227)
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800V 40A mosfet
Abstract: APT0406 APT0502 APTM100VDA35T3G
Text: APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC 28 27 26 25
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APTM100VDA35T3G
APTM100VDA35T3G
800V 40A mosfet
APT0406
APT0502
APTM100VDA35T3G
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Untitled
Abstract: No abstract text available
Text: APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350m typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction PFC Interleaved PFC 28 27 26 25
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APTM100VDA35T3G
APTM100VDA35T3Gâ
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Untitled
Abstract: No abstract text available
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
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mosfet 10a 800v
Abstract: SOT-227 heatsink sic-diode 1000v APT0502 diode schottky 1000V 10a
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
mosfet 10a 800v
SOT-227 heatsink
sic-diode 1000v
APT0502
diode schottky 1000V 10a
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000
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IXFL44N100P
300ns
44N100P
4-01-08-D
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44n10
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000
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IXFL44N100P
300ns
44N100P
4-01-08-D
44n10
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 37A ≤ 220mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN44N100P
300ns
OT-227
E153432
44N100P
8-27-07-B
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB44N100P
300ns
PLUS264TM
44N100P
4-01-08-D
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MOSFET 1000v 30a
Abstract: APTM100DSK35T3
Text: APTM100DSK35T3 Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 11 18 22 7 19 10 23 CR1 29 8 30 CR 2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 1000V
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APTM100DSK35T3
APTM100DSK35T3
MOSFET 1000v 30a
APTM100DSK35T3
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXFN44N100P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFN44N100P
300ns
OT-227
E153432
44N100P
4-01-08-D
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000
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IXFL44N100P
300ns
44N100P
9-20-07-C
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500V N-Channel IGBT TO-3P
Abstract: IRGP440U igbt 500V 22A 22a ic
Text: PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGP440U
500V N-Channel IGBT TO-3P
IRGP440U
igbt 500V 22A
22a ic
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22a ic
Abstract: 1000v bipolar transistor igbt 500V 22A IRGP440U IRGP440U same
Text: PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGP440U
22a ic
1000v bipolar transistor
igbt 500V 22A
IRGP440U
IRGP440U same
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igbt 500V 22A
Abstract: APTM100TDU35P
Text: APTM100TDU35P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
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APTM100TDU35P
APTM100TDU35P
igbt 500V 22A
APTM100TDU35P
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DIODE S4 56
Abstract: APT0502 APTM100TDU35PG
Text: APTM100TDU35PG Triple dual common source MOSFET Power Module D3 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 S1 Benefits
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APTM100TDU35PG
APTM100TDU35PG
DIODE S4 56
APT0502
APTM100TDU35PG
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Untitled
Abstract: No abstract text available
Text: APTM100TDU35PG Triple dual common source MOSFET Power Module D3 D1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
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APTM100TDU35PG
APTM100TDU35PGâ
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR
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IXFB44N100P
300ns
PLUS264TM
44N100P
8-27-07-B
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SML10043JVR
Abstract: No abstract text available
Text: Illl Vrr r = mi SEM E SML10043JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 1000V 22A 0.430Q Faster Switching
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SML10043JVR
OT-227
MIL-STD-750
SML10043JVR
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Untitled
Abstract: No abstract text available
Text: Low kelvin connections ~E Key features 4 w ir e c o n n e c tio n s • u ltra lo w re s is ta n c e R 0 0 1 -R 1 0 • to u g h m o u ld e d e p o x y b od y * p o w e r ra tin g up to 7 w a tts • to le ra n c e d o w n to 0.1 °/o • d o w n to ± 5 0 p p m te r •
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F0495B
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