Semikron skiip 22 nab 12
Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Text: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0
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Untitled
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE AC INPUT LARGE FORWARD AC INPUT TYPE 6 PIN OPTOCOUPLER PS2625 PS2625L PS2626 PS2626L FEATURES DESCRIPTION_ • PS2625, PS2626 ,PS2625Land PS2626L are optically coupled isolators containing a GaAs light emitting diode and a NPN
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PS2625
PS2625L
PS2626
PS2626L
PS2625,
PS2626
PS2625Land
PS2626L
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2625, PS2626, PS2625L, PS2626L HIGH ISOLATION VOLTAGE AC INPUT LARGE FORWARD AC INPUT TYPE 6 PIN PHOTOCOUPLER — NEPOC Series — DESCRIPTION PS2625, PS2626 and PS2625L, PS2626L are optically coupled isolators containing a GaAs light em itting diode
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PS2625,
PS2626,
PS2625L,
PS2626L
PS2626
PS2626L
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Untitled
Abstract: No abstract text available
Text: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code
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HSB88WS
ADE-208-026B
HSB88W
200pF,
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Untitled
Abstract: No abstract text available
Text: SIE D HL1361 AC • MMIbaOS OGllbE? ÖÖT ■ H I T M -Under Development HITACHI/ OPTOELECTRONICS Laser Diode D escription T—41—05 HL1361AC is a 1.3 /¿m InG aA sP distributedfeedback (DFB) laser diode with X/4 phase shifted.
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HL1361
HL1361AC
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photo transistor til 78
Abstract: Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN TIL188-4 AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4
Text: T IL 1 87 1 THRU TIL1B7-4 TIL188 1 THRU TIL188-4 AC INPUT OPTOCOUPLERSfOPTOISOLATORS SOOS012A D29BO, JANUARY 19 8 7 —HEVISÊD JULY 1989 AC Signal Input • Gallium Arsenide Dual-Diode Infrared Source Optically Coupled to a Silicon N-P-IV Darlinaton Phototransistor
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TIL188-4
SOOSQ12A
D29BO.
E65085
TIL187
photo transistor til 78
Transistor AC 187
transistor tl 187
TL 187 TRANSISTOR NPN
AC 187 npn transistor TO 1
E65085
Til 160
Phototransistor Til 78
TIL187-4
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D2980
Abstract: emitter phototransistor til 31 NA TRANSISTOR TIL187 TIL187-1 TIL187-4 TIL188 TIL188-1 TIL188-4
Text: TILI 87-1 THRU TIL187-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input Gallium Arsenide Dual-Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington Phototransistor High Current Transfer Ratio, 500% Minimum
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D2980,
1987-REVISED
E65085
TIL188
TIL187
D2980
emitter phototransistor til 31
NA TRANSISTOR
TIL187-1
TIL187-4
TIL188-1
TIL188-4
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TIL196
Abstract: optocouplers from texas instruments TIL194A TIL194B TIL195 TIL195B TIL196A TIL196B I0831
Text: TILI 94, mi95, TILI 96, TIL194A, TIL195A, TIL196A TIL194B, TIL195B, TIL196B AC INPUT OPTOCOUPLERS D 3 2 8 7 , M A Y 1 9 8 9 -R E V IS E D SEPTEMBER 1989 • AC Signal Input • Choice of Three Current-Transfer Ratios • Gallium-Arsenide Diode Infrared Source
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TILI94,
TILI96,
TIL194A,
T1L195A,
TIL196A
TIL194B,
TIL195B,
TIL196B
d3287.
1989-revised
TIL196
optocouplers from texas instruments
TIL194A
TIL194B
TIL195
TIL195B
I0831
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JU003
Abstract: No abstract text available
Text: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls
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ETK81-O5O
Ic680
JU003
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TIL188-4
Abstract: No abstract text available
Text: TILI 87-1 THRU TILI 87-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input • High Current Transfer Ratio, 500% Minimum at Ip - 10 mA, Up to 1500% Minimum at If - 2 mA with Four Categories Gallium Arsenide Dual-Diode Infrared Source
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D2980,
1987-REVISED
TIL187
TIL188-4
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Untitled
Abstract: No abstract text available
Text: 6DI3OB-O5CK30A — )v P O W E R T R A N S IS T O R M O D U LE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls
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6DI3OB-O5CK30A)
I95t/R89)
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Untitled
Abstract: No abstract text available
Text: TIL 194, T I L 1 95, TILI 96, TIL194A, TIL195A, TIL196A TIL194B, TIL195B, TIL196B AC INPUT OPTOCOUPLERS D 3 2 8 7 , M A Y 1 9 8 9 -R E V IS E D SEPTEMBER 198 9 • AC Signal Input • Choice of Three Current-Transfer Ratios • Gallium-Arsenide Diode Infrared Source
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TIL194A,
TIL195A,
TIL196A
TIL194B,
TIL195B,
TIL196B
E65085
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 15-06 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM VRRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 15-06 A Test Conditions Maximum Ratings per diode I frm Tc = 135°C ; rectangular, d = 0.5
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O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 15-03 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 15-03 A Test Conditions Maximum Ratings per diode I fr m Tc = 135°C ; rectangular, d = 0.5
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O-220
1500C
D2-31
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C1685 transistor
Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
Text: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator
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E90700
ST1603A
C2079
C1296A
c1294
C1685 transistor
C1684 r .85 transistor
C1685
transistor c1684
C1680
C1681
TRANSISTOR C1685
C1679
C1682
C1683
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 8-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 DSEP 8-06A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode U rms 35
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O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 12-12A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM 15 A FAV V RRM 1200 V t rr 40 ns TO-220 AC Type V 1200 1200 DSEP 12-12A Symbol Test Conditions Maximum Ratings per diode I frm Tc = 125°C ; rectangular, d = 0.5
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2-12A
O-220
D2-31
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6sv7 tube
Abstract: 1 watt diode DC1515
Text: TENTATIVE 6SV7 DATA TUNG'SOL DIODE PENTODE COATED UNIPOTENTIAL CATHODE HEATER 6 .3 VOLTS 300 MA. AC OR DC ANY MOUNTING POSITION BOTTOM VIEW S M A L L W AFER 8 P I N OCTA L 7AZ METAL SHELL THE 6SV7 COMBINES A DIODE AND SHARP CUT OFF RF AM PLIFIER PENTODE IN THE
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M8-210
6sv7 tube
1 watt diode
DC1515
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E67349
Abstract: TLP330
Text: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse
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TLP330
TLP330
150mA.
150mA
5000Vrms
UL1577,
E67349
220kH
E67349
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 29-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 29-03A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5
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9-03A
O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 29-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 29-06A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5
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9-06A
O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: RM25TN-2H Description: M itsubishi Three-P hase Diode Bridge M odules are designed fo r use in applications requiring rectifi cation of thre e-p ha se AC lines into DC voltage. Each m odule consists of six diodes and the interconnect required to form a com plete threephase bridge circuit. Each diode is
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RM25TN-2H
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Untitled
Abstract: No abstract text available
Text: AC, 1 min Operating / stor. temperature Q Sym bol vV¡sol 4> —I o o —I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK C o n d itio n s 1> Values U nits 3000 V -25.+85 °C IGBT and Inverse Diode V ces V cc5 lc Tj 3) If Ifm Ifsm l2t Diode) Driver
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Untitled
Abstract: No abstract text available
Text: RM10TN-2H Description: M itsubishi Three-P hase Diode Bridge M odules are designed fo r use in applications requiring rectifi cation of thre e-p ha se AC lines into DC voltage. Each m odule consists of six diodes and the interconnect required to form a com plete threephase bridge circuit. Each diode is
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RM10TN-2H
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