surge absorber
Abstract: ZNR Y
Text: Surge Absorber Units “ZNR” Surge Absorber Units The Surge Absorber Unit contains Y, ∆ or p connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where reliability
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surge absorber
Abstract: EC139 absorber
Text: Surge Absorber Units “ZNR” Surge Absorber Units The Surge Absorber Unit contains Y, ∆ or π connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where reliability
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EC142
surge absorber
EC139
absorber
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surge absorber
Abstract: absorber 3 WIRE ZNR
Text: Surge Absorber Units ÒZNR âÓ Surge Absorber Units The Surge Absorber Unit contains Y, Æ or p connected ZNRs surge absorbers and, if necessary, a circuit breaker in a box. These Surge Absorber Units are designed for surge protection of industrial electric equipment where the
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ERZA5F201ACA
ERZA5F220BC
ERZA5F390BC
ERZA1P251BC
ERZA1P251AR]
ERZA5F680BC
ERZA5F101BC
ERZA5F201BC
surge absorber
absorber
3 WIRE ZNR
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NSAD500H
Abstract: D16235EJ1V1DS00
Text: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,
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NSAD500H
SC-88A
IEEE1394,
NSAD500H
D16235EJ1V1DS00
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NSAD500F
Abstract: No abstract text available
Text: DATA SHEET SURGE ABSORBER DEVICES NSAD500F ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-59 PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.8 ± 0.2 0.4 +0.1 -0.05 devices. Use by 100 to 500 Mbps class data line (USB2.0,
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NSAD500F
SC-59
IEEE1394,
NSAD500F
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absorber nec
Abstract: NSAD500H
Text: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE DESCRIPTION PACKAGE DRAWING Unit: mm <R> NSAD500H is a low capacity ESD surge absorber developed for 2.1 ± 0.1 100 to 500 Mbps-class data line ESD noise protection, such as
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NSAD500H
SC-88A
NSAD500H
IEEE1394,
IEC61000-4-2
absorber nec
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NSAD500H
Abstract: No abstract text available
Text: DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,
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NSAD500H
SC-88A
IEEE1394,
NSAD500H
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NSAD500S
Abstract: surge absorber
Text: DATA SHEET SURGE ABSORBER DEVICES NSAD500S ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-70 PACKAGE PACKAGE DRAWING Unit: mm DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0,
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NSAD500S
SC-70
IEEE1394,
NSAD500S
surge absorber
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YP-141N
Abstract: YA-501 ys-301 YP-141 N YS-701 zener diodes color coded YP-251 YP-501M yp501 surge absorber
Text: BL SURGE ABSORBER BL mini Surge Absorber BLSA , invented and produced by Japan BL Kogyo INC. , is a series of high-tech electronic components and is fully protected by international patent law . Its patent register number in Japan is HEI 7-16632 ; in USA: 08/378,969 ; in Korean: 2021/1995 ; in China: 94202711.6 . BL Surge
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25MAX)
YP-141N
YA-501
ys-301
YP-141 N
YS-701
zener diodes color coded
YP-251
YP-501M
yp501
surge absorber
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IC-3523
Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1458
PA1458
PA1458H
IC-3523
IC-6342
MEI-1202
MF-1134
IEI-1213
power transistor array
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IC-6634
Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1478
PA1478
PA1478H
IC-6634
MEI-1202
MF-1134
IEI-1213
2di50
DARLINGTON TRANSISTOR ARRAY
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IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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Bolt Torque M32
Abstract: hydraulic shock absorber RBC2015 RBC0805 RB27-X331 RBC1411 shock absorber RBC1007 Energy Me bm10
Text: Shock Absorber Series RB Impact and noise absorption Automatic adjustment to the most appropriate absorption performance Dampening to meet the high speed requirements of the modern world. Specially designed orifice can absorb energy comprehensively and most appropriately in many different
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G10597
Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.
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PA1500B
PA1500B
G10597
pa1500bh
uPA1500
IEI-1213
MEI-1202
MF-1134
G-1059
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andrew 13 GHz microwave antenna
Abstract: Andrew antennas Andrew antennas 4.5 andrew feed microwave antenna 1427-1535 MHz
Text: Antenna Types Shielded Antennas Shielded antennas include a low-VSWR feed, shielded reflector with RF absorber, a planar radome and a vertical pipe mount. Because of their construction, this series of antennas affords superior radiation characteristics, rugged
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Siemens RF
Abstract: M8613
Text: Siemens Matsushita Components Requirements for RF Absorber Chambers Used for Measurement of Radiated Emissions Author: A. Kohling, Erlangen If autom ated radiation emission m easurem ents are to yield reproducible results, they must be perform ed in shielded
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andrew 13 GHz microwave antenna
Abstract: No abstract text available
Text: Antenna Types Shielded Antennas Shielded antennas include a low-VSWR feed, painted reflector and shield with RF absorber, a planar radome and a m ount fo r attachment to a vertical pipe. This series of antennas provides excellent radiation characteristics,
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iei-1209
Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and
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PA1438
uPA1438
tPA1438H
IEI-1209)
iei-1209
transistor CD 910
IC351
IC-3517
IEI-1213
MEI-1202
MF-1134
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iei-1209
Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits
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uPA1428
The/xPA1428
PA1428H
IEI-1209)
iei-1209
PA1428
IC-6633
IEI-1213
MEI-1202
MF-1134
NEC RELAY
DARLINGTON TRANSISTOR ARRAY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR _ /¿PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The ¿¡PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.
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PA1500B
PA1500B
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PA1501h
Abstract: nec pa1501h
Text: N E C ,r • DATA SHEET iiPA1501 COMPOUND FIELD EFFECT POWER TRANSISTOR - A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1501 is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and
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iiPA1501
PA1501
/PA1501H
PA1501h
nec pa1501h
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PA1500B
Abstract: PA1500BH
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ju P A 1 5 0 0 B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for
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uPA1500B
uPA1500BH
PA1500B
PA1500BH
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UPA1500
Abstract: IC-3326 DIODE u5 TEA-1037 IEI-1213 MEI-1202 MF-1134 IPA1500H fet 9411
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR »PA1500 N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The /iP A1500 is N-channel Power MOS FET Array in millimeters that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.
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uPA1500
/IPA1500H
12-Pin
IC-3326
DIODE u5
TEA-1037
IEI-1213
MEI-1202
MF-1134
IPA1500H
fet 9411
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSORS M65811FP JITTER ABSO RBER FOR DIGITAL AUDIO SYSTEM DESCRIPTIO N The M 6 58 11F P is a digital audio jitter absorber fabricated PIN CONFIGURATIO N TOP VIEW with silicon-gate C M O S technology. Jitter on the digital audio data is rejected by jitter-free
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M65811FP
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