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    ABB SWITZERLAND LTD Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd
    KC355QD7LF224KH01K Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.22μF±10% Visit Murata Manufacturing Co Ltd

    ABB SWITZERLAND LTD Datasheets Context Search

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    IEC104

    Abstract: REC580 CP56Time2a REF542 RER581 IEC61850 Full project report on object counter AXP 193 Eberle Relays microscada abb
    Text: CAP581 Configuration Tool for COM581 p Operating Instructions 1MRB520184-Uen Edition July 2005 2000 ABB Switzerland Ltd Baden/Switzerland 4th Edition Applies for software version V6.0 We reserve all rights with respect to this document and the software it


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    PDF CAP581 COM581 1MRB520184-Uen CH-5400 IEC104 REC580 CP56Time2a REF542 RER581 IEC61850 Full project report on object counter AXP 193 Eberle Relays microscada abb

    IEC-103

    Abstract: IEC60870-5-104 IEC104 IEC61850 IEC103 IEC-101 SF6 switchgear IEC60870-5-101 COM581 MICRO SCADA ABB
    Text: COM581 Gateway p Operating Instructions 1MRB520267-Uen Edition July 2006 2001 ABB Switzerland Ltd Baden/Switzerland 5th Edition Applies for software version V6.2 All rights with respect to this document, including applications for patent and registration of other industrial property rights, are reserved. Unauthorised use, in


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    PDF COM581 1MRB520267-Uen CH-5400 IEC-103 IEC60870-5-104 IEC104 IEC61850 IEC103 IEC-101 SF6 switchgear IEC60870-5-101 COM581 MICRO SCADA ABB

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
    Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3


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    PDF CH-5600 5SYA2053-02 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation

    thyristor Q 720

    Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor


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    PDF 1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200

    stakpak

    Abstract: abb press-pack igbt 20H2500 5SNR 20H2500 IGBT 1500 press-pack igbt abb stakpak EN-50124 130025H0003 IGBT abb
    Text: VCE IC = = ABB StakPakTM H Series 2500 V 2000 A Presspack IGBT 5SNR 20H2500 Preliminary Doc. No. 5SYA1582-01 May 03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


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    PDF 20H2500 5SYA1582-01 CH-5600 stakpak abb press-pack igbt 20H2500 5SNR 20H2500 IGBT 1500 press-pack igbt abb stakpak EN-50124 130025H0003 IGBT abb

    5SHX26L4520

    Abstract: tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4520 Doc. No. 5SYA1251-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency


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    PDF 26L4520 5SYA1251-00 CH-5600 5SHX26L4520 tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439

    IGCT thyristor ABB

    Abstract: IGCT
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency


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    PDF 19L6020 5SYA1250-00 CH-5600 IGCT thyristor ABB IGCT

    EN-50124

    Abstract: EN50124
    Text: V RRM = IF = 2500 V 2000 A ABB StakPak H Series Press-pack Diode 5SLF 20H2501 Doc. No. 5SYA1584-03 May. 07 • High SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


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    PDF 20H2501 5SYA1584-03 CH-5600 EN-50124 EN50124

    stakpak

    Abstract: IGBT abb abb press-pack igbt 130025H0003 press-pack igbt 5SNR 10H2500 EN-50124 EN50124-1 IC 9102 EN50124
    Text: VCE IC = = ABB StakPakTM H Series 2500 V 1000 A Presspack IGBT 5SNR 10H2500 Preliminary Doc. No. 5SYA1580-01 May 03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


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    PDF 10H2500 5SYA1580-01 CH-5600 stakpak IGBT abb abb press-pack igbt 130025H0003 press-pack igbt 5SNR 10H2500 EN-50124 EN50124-1 IC 9102 EN50124

    5SNA 1200E250100

    Abstract: No abstract text available
    Text: VCE IC = = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 Doc. No. 5SYA 1557-02 July 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 1200E250100 CH-5600 5SNA 1200E250100

    5SYA2039

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA 1556-02 July 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 1200E330100 CH-5600 5SYA2039

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA 1561-00 Jan.05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 2400E120100 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-02 09-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


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    PDF 1200G330100 5SYA1563-02 CH-5600

    IGCT thyristor ABB

    Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


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    PDF 10H6004 5SYA1226-03 co1226-03 CH-5600 IGCT thyristor ABB igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb

    5SGF40L4502

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 40L4502 5SYA1209-04 40L4502 CH-5600 5SGF40L4502

    ic 082 specifications

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 1800E170100 CH-5600 ic 082 specifications

    IGBT CHIP 600V ABB

    Abstract: ABB IGBT diode 1200V 2400E-12
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 2400E120100 5SYA1561-00 CH-5600 IGBT CHIP 600V ABB ABB IGBT diode 1200V 2400E-12

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


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    PDF 1200G330100 5SYA1563-01 CH-5600 1200G330100

    GTO thyristor ABB

    Abstract: 40L4502
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


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    PDF 40L4502 5SYA1209-04 40L4502 CH-5600 GTO thyristor ABB

    IGCT thyristor ABB

    Abstract: IGCT abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


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    PDF 08F4502 5SYA1223-04 08F4502 CH-5600 IGCT thyristor ABB IGCT abb

    igct abb

    Abstract: IGCT thyristor ABB IGCT thyristor current max gct thyristor IGCT HFBR-2528 06F6
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 520 4.3 2.3 2.3 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6004 mΩ Ω V Doc. No. 5SYA1222-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


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    PDF 06F6004 5SYA1222-03 c1222-03 CH-5600 igct abb IGCT thyristor ABB IGCT thyristor current max gct thyristor IGCT HFBR-2528 06F6

    igct abb

    Abstract: IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


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    PDF 14H4502 5SYA1227-03 Ambient1227-03 CH-5600 igct abb IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max

    HFBR-2521Z

    Abstract: 6227-1 j-900 HFBR-1528Z
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


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    PDF 35L4521 5SYA1253-00 CH-5600 HFBR-2521Z 6227-1 j-900 HFBR-1528Z

    EN50124-1

    Abstract: stakpak EN-50124 Abb diode EN50124 20H2500 Ka10000 IE-33 ABB K series
    Text: VRRM = IF = ABB StakPakTM H Series 2500 V 2000 A Presspack Diode 5SLF 20H2500 Preliminary Specification Doc. No. 5SYA1584-01 June 03 • Rugged SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package


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    PDF 20H2500 5SYA1584-01 CH-5600 EN50124-1 stakpak EN-50124 Abb diode EN50124 20H2500 Ka10000 IE-33 ABB K series