ABB 5STP 16F2600
Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
Text: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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Original
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16F2800
16F2800
16F2600
16F2200
67xVDRM
CH-5600
ABB 5STP 16F2600
5STP 16F2600
5STP 16F2800
ABB 5STP 12
5STP16F2200
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PDF
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5STP 16F2200
Abstract: 5STP 16F2600 16F2600 ABB 5STP 16F2600 5STP16F2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 1400 A 2210 A 18000 A 0.82 V 0.370 mΩ Ω Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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16F2800
5SYA1022-03
16F2800
16F2600
16F2200
CH-5600
5STP 16F2200
5STP 16F2600
ABB 5STP 16F2600
5STP16F2800
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSM = 2800 V ITAVM = 1400 A ITRMS = 2210 A ITSM = 18000 A VT0 = 0.82 V rT = 0.370 mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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16F2800
5SYA1022-03
16F2800
16F2600
16F2200
67xVDRM
CH-5600
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PDF
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ABB 5STP 16F2600
Abstract: 5STP 5STP 16F2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 1400 A 2210 A 18000 A 0.82 V 0.37 mΩ Ω Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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16F2800
5SYA1022-03
16F2600
16F2200
CH-5600
ABB 5STP 16F2600
5STP
5STP 16F2800
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PDF
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