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    A949 TRANSISTOR Search Results

    A949 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A949 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor a949

    Abstract: A949 2SA949 a949 transistor TOSHIBA a949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		2SA949 O-92MOD transistor a949 A949 2SA949 a949 transistor TOSHIBA a949 PDF

    transistor a949

    Abstract: A949 2SA949 A949 Y a949 transistor
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		2SA949 transistor a949 A949 2SA949 A949 Y a949 transistor PDF

    transistor a949

    Abstract: A949 a949 transistor A949 Y 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		2SA949 transistor a949 A949 a949 transistor A949 Y 2SA949 PDF

    transistor a949

    Abstract: A949 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 4.0 pF typ. • High transition frequency: fT = 120 MHz (typ.)


    Original     		2SA949 transistor a949 A949 2SA949 PDF