MC1408
Abstract: MC1408-8N NE530 500W TRANSISTOR AUDIO AMPLIFIER
Text: MC1408−8 Product Preview 8−bit Multiplying D/A Converter The MC1408−8 is an 8−bit monolithic digital−to−analog converter which provides high−speed performance with low cost. It is designed for use where the output current is a linear product of an 8−bit digital
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MC1408-8
MC1408-8
SOIC-16
MC1408-8/D
MC1408
MC1408-8N
NE530
500W TRANSISTOR AUDIO AMPLIFIER
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MC1408
Abstract: MC1408 Digital-to-Analog Converter NE530 500w audio amplifier free circuit diagram MC1408-8D MC14082
Text: MC1408−8 8−bit Multiplying D/A Converter The MC1408−8 is an 8−bit monolithic digital−to−analog converter which provides high−speed performance with low cost. It is designed for use where the output current is a linear product of an 8−bit digital
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MC1408-8
MC1408-8
MC1408-8/D
MC1408
MC1408 Digital-to-Analog Converter
NE530
500w audio amplifier free circuit diagram
MC1408-8D
MC14082
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MC1408
Abstract: 950W BEI15 500w audio amplifier free circuit diagram
Text: MC1408−8 8−bit Multiplying D/A Converter The MC1408−8 is an 8−bit monolithic digital−to−analog converter which provides high−speed performance with low cost. It is designed for use where the output current is a linear product of an 8−bit digital
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Original
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PDF
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MC1408-8
SOIC-16
PDIP-16
MC1408-8D
MC1408-8/D
MC1408
950W
BEI15
500w audio amplifier free circuit diagram
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mc1408
Abstract: MC14088N mc14089 ladder servo motor diagram
Text: MC1408−8 8−bit Multiplying D/A Converter The MC1408−8 is an 8−bit monolithic digital−to−analog converter which provides high−speed performance with low cost. It is designed for use where the output current is a linear product of an 8−bit digital
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Original
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PDF
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MC1408-8
SOIC-16
MC1408-8/D
mc1408
MC14088N
mc14089
ladder servo motor diagram
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Untitled
Abstract: No abstract text available
Text: S N 74AC T215 7 2K x 16 C A C H E A D D R E S S C O M PA R A TO R /D A TA RAM D3326, JANUARY 1990-REVlSED JUNE 1990 Fast A ddress to Match Delay . . . 20 ns Max FN PACKAGE TOP VIEW Totem -Pole and Open-Drain Match Outputs On-Chip Address/D ata Com parator
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D3326,
1990-REVlSED
T2157
18-bit
T2157
ACT2157
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HM4315P
Abstract: HM43 10juW
Text: H M 4 3 1 5 P 4 0 9 6 -w o rd X 1 -b it Static Random Access M em ory Low Power S t a n d b y . 10juW typ. Low Power O p e r a tio n .20m W typ.
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HM4315P
4096-wordXI-bit
10juWtyp.
450ns
HM4315P
HM43
10juW
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Untitled
Abstract: No abstract text available
Text: him RMS DATA SHEET_ March 1994 HM 65779 8 Kx 9 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max LOW POWER CONSUMPTION ACTIVE : 850 mW (max) STANDBY :1 25 mW (max) 300 AND 330 MILS WIDTH PACKAGE
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65779/Rev
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Untitled
Abstract: No abstract text available
Text: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)
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F12-TM
65162/Rev
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65728
Abstract: 65728H
Text: M'ÌE » • 5ñfc.fl4Sb D P D l i m bSñ ■ flflHS _ r = ^ - Z 3 v z nllll I V r H September 1990 HATRA M H S HM 65728 DATA SHEET 2 kx 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS FAST ACCESS TIME
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fl45b
65728
65728H
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Untitled
Abstract: No abstract text available
Text: 4RE D Sñtjfl4Sb □□□llT'ì bfib M M M H S fililíI V r H I September 1990 MATRA M H S HM 65790 DATASHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
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Untitled
Abstract: No abstract text available
Text: IlM lI September 1989 HM 65687 DATASHEET 64 k x 1 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 nW (typ) DATA RETENTION : 0.8 |xW (typ)
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Untitled
Abstract: No abstract text available
Text: M ill DATA SHEET_ HM 65788 16 K x 4 HIGH SPEED CMOS SRAM FEATURES . . . . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE . SINGLE 5 VOLT SUPPLY
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65788/Rev
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 4 MCM516400 Advance Information Fast Page Mode 16M CMOS Dynamic RAM Family Fast Page Mode, x4 and x1, 2K and 4K Refresh 4096 Cycle Refresh MCM517400 T h e fa m ily o f 1 6 M d y n a m ic R A M s is fa b ric a te d u s in g 0 .6 ^ C M O S h ig h -s p e e d s ilic o n -
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MCM516400
MCM517400
CM516100J60
CM516100J70
516400J60
MCM516400J70
517400J60
517400J70
516100T60
516100T70
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HM4315P
Abstract: No abstract text available
Text: H M 4 3 1 5 P 4 0 9 6 -w o rd X 1 -b it Static Random Access M em ory Low Power S t a n d b y . 10juW typ. Low Power O p e r a tio n .20m W typ.
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HM4315P
4096-wordXI-bit
10juWtyp.
450ns
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CMS210 memory
Abstract: card 60-pin
Text: CMS209, CMS210, CMS212, CMS213, CMS214, CMS216 CMOS OTP PROM MEMORY CARDS _ SMN8209A-JUNE 1991-REVISED JANUARY 1993 60-PIN MEMORY CARD CONNECTOR VIEW * Card Size (85 mm x 54 mm x 3.6 mm) * Organization . . . From 64K x 8 to 256K x 16 * Single 5-V Power Supply (Read Mode)
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CMS209,
CMS210,
CMS212,
CMS213,
CMS214,
CMS216
SMN8209A-JUNE
1991-REVISED
16-Bit
60-Pin
CMS210 memory
card 60-pin
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DDE1217
Abstract: MSM27C1622ZB
Text: O K I Semiconductor MSM27C1622ZB IPffSiilmSfùSffY 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM D E S C R IP TIO N The MSM27C1622ZB is an 16 Mb electrically Programmable Read-Only Memory w hose configuration can be electrically switched between 1,048,576 words x 16 bits and 2,097,152 w ords x 8 bits. It operates on a
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MSM27C1622ZB
576-Word
16-Bit
152-Word
MSM27C1622ZB
42-pin
44-pin
DDE1217
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Untitled
Abstract: No abstract text available
Text: Illììlilll DATA SHEET_ HM 65687A 64 Kx 1 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 35/45 ns max MILITARY/INDUSTRIAL : 45/55 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE: 175.0 mW(typ) STANDBY : 0.5 hW (typ) DATA RETENTION : 0.4 jiW (typ)
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5687A
5687A
5687A/Rev
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F16 - 100 HIP
Abstract: 65664A
Text: Tem ic HM 65664A S e m i c o n d u c t o r s 8 K X 8 Very Low Power CMOS SRAM Introduction The HM 65664A is a very low pow er CM O S static RAM organized as 8192 x 8 bit. It is m anufactured using the TEM IC high perform ance CM O S technology nam ed super CM OS.
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5664A
5664A
F16 - 100 HIP
65664A
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Untitled
Abstract: No abstract text available
Text: IBM0316409C Advance 4M x 4 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CAS latency = 3 -10 C lock Frequency -11 -12 -13 Burst Read/Write Modes with Sequential and Interleave Addresses <100M Hz <91 MHz <83MHz <77MHz
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IBM0316409C
TSOP-44
400mil)
83MHz
77MHz
cycles/64ms
2048x1024x4
A8A9A10A11
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