Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A82 TRANSISTOR Search Results

    A82 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A82 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A82

    Abstract: No abstract text available
    Text: Cascadable Amplifier 20 to 250 MHz A82/ SMA82 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA82 MIL-STD-883 transistor A82

    transistor A82

    Abstract: SMA82 CA82
    Text: A82 / SMA82 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA82 MIL-STD-883 transistor A82 SMA82 CA82

    transistor A82

    Abstract: No abstract text available
    Text: Cascadable Amplifier 20 to 250 MHz A82-1/ SMA82-1 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82-1 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A82-1/ SMA82-1 A82-1 MIL-STD-883 transistor A82

    transistor A82

    Abstract: A82-1 CA82-1 SMA82-1 sma82
    Text: A82-1 / SMA82-1 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82-1 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A82-1 SMA82-1 MIL-STD-883 transistor A82 CA82-1 SMA82-1 sma82

    transistor A82

    Abstract: A82 transistor CA82 SMA82
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics


    Original     		PDF A82/SMA82 SMA82 transistor A82 A82 transistor CA82 SMA82

    transistor A82

    Abstract: No abstract text available
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · HIGH GAIN: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics


    Original     		PDF A82/SMA82 SMA82 transistor A82

    STELLEX

    Abstract: transistor A82
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics


    Original     		PDF A82/SMA82 50-ohm STELLEX transistor A82

    Untitled

    Abstract: No abstract text available
    Text: A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >34 dB TYP. · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics


    Original     		PDF A82-1/SMA82-1 50-ohm

    transistor A82

    Abstract: A82 transistor
    Text: A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >34 dB TYP. · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics


    Original     		PDF A82-1/SMA82-1 A82-1 SMA82-1 CA82-1 transistor A82 A82 transistor

    2N3904 A30

    Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
    Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF

    a106 capacitor

    Abstract: 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017 HIP6017EVAL1 HIP6019 HIP6019EVAL1 T60-52 mosfet T60
    Text: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor


    Original     		PDF HIP6017, HIP6019 AN9800 HIP6019EVAL1 HIP6017 a106 capacitor 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017EVAL1 T60-52 mosfet T60

    a106 capacitor

    Abstract: C4346 a106 diode atx power supply schematic dc atx power supply circuit diagram T60-52 atx power supply schematic PO716 R2024 ATX MOTHERBOARD schematic
    Text: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor


    Original     		PDF HIP6017, HIP6019 AN9800 HIP6019EVAL1 HIP6017 a106 capacitor C4346 a106 diode atx power supply schematic dc atx power supply circuit diagram T60-52 atx power supply schematic PO716 R2024 ATX MOTHERBOARD schematic

    atx power supply circuit diagram

    Abstract: ATX MOTHERBOARD CIRCUIT diagram a106 capacitor mosfet T60 atx power supply schematic dc t60 capacitor 13t regulator dc input atx power supply schematic Schottky Diode B29 T60-52
    Text: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor


    Original     		PDF HIP6017, HIP6019 AN9800 HIP6019EVAL1 HIP6017 atx power supply circuit diagram ATX MOTHERBOARD CIRCUIT diagram a106 capacitor mosfet T60 atx power supply schematic dc t60 capacitor 13t regulator dc input atx power supply schematic Schottky Diode B29 T60-52

    transistor A106

    Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
    Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A


    Original     		PDF LM2639 T025A2 OT-23 SMDIP-10 SO-24 205Inductor A6S-0104 transistor A106 transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet

    AMD-K7750MTR52B

    Abstract: Northbridge transistor book AMD A75 amdk7600mtr51b Athlon 64 M amdk7650mtr51ba
    Text: Preliminary Information AMD Athlon TM Processor Data Sheet Publication # 21016 Rev: G Issue Date: December 1999 Preliminary Information 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced


    Original     		PDF AMD-751TM AMD-756TM 21016G/0 AMD-K7750MTR52B Northbridge transistor book AMD A75 amdk7600mtr51b Athlon 64 M amdk7650mtr51ba

    Untitled

    Abstract: No abstract text available
    Text: WJ-A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) HIGH GAIN: 22.5 dB (TYP.) Outline Drawings Specifications’1 A82 Typical Characteristics


    OCR Scan     		PDF WJ-A82 SMA82 50-ohm

    WJ-A82-1

    Abstract: No abstract text available
    Text: WJ-A82-1 / SMA82-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 34 dB TYP. HIGH OUTPUT POWER: +15.5 dBm (TYP.) HIGH GAIN: 18dB (TYP) LOW OUTPUT VSWR : 1.1:1 (TYP.) Outline Drawings A82-1


    OCR Scan     		PDF WJ-A82-1 SMA82-1 A82-1 00071ht

    Transistor BC 457

    Abstract: WJ-A82-1 WJ-A82 bc 457 Transistor bc 149 transistor transistor 9822 WJA82 WJ-CA82
    Text: uuU A82-1 /SMA82-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP) LOW OUTPUT VSWR : 1.1:1 (TYP.) O utline D raw ings A82-1


    OCR Scan     		PDF A82-1 /SMA82-1 A82-1 50-QHM J1-4401 Transistor BC 457 WJ-A82-1 WJ-A82 bc 457 Transistor bc 149 transistor transistor 9822 WJA82 WJ-CA82

    WJA8

    Abstract: WJ-A82
    Text: u u U A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB TYR HIGH LEVEL OUTPUT: +20 dBm (TYR) LOW NOISE: 2.8 dB (TYR) HIGH GAIN: 24.5 dB (TYR) «I n Outline Drawings Specifications*


    OCR Scan     		PDF SMA82 50-ohm WJ-CA82 WJ-A82 1-800-WJ1-4401 WJA8

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


    OCR Scan     		PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23

    TC518129AF-10

    Abstract: No abstract text available
    Text: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low


    OCR Scan     		PDF TC518129A-LV TC518129APL/AFL-80LV TC518129APL/AFL-1OLV TC518129APL/AFL-12LV DIP32 TC518129APL TC518129AF-10

    ysm7

    Abstract: TDA2020 TDA 2020 Application TDA HI-FI 20w tda GA-08 TDA 2020 TDA2Q20 8N11 TDA 1275
    Text: S G S-THONSON 07E D I . J VJ i 7 T 5 tl.S3? a 01 Efc.bE 3 J C H IC U N U U L LINEAR INTEGRATED CIRCUITS I U K V -U K T K 1 t V £ 1 " ' ' • TDA2020 i i L 1 j 3 NOT FOR NEW DESIGN 20W Hi-Fi AUDIO AMPLIFIER The T D A 2020 is a monolithic integrated operational amplifier in a 14-lead quad in-line plastic pa­


    OCR Scan     		PDF TDA2Q20 14-lead DQ15t TDA2020 CS-0074 ysm7 TDA 2020 Application TDA HI-FI 20w tda GA-08 TDA 2020 TDA2Q20 8N11 TDA 1275

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		PDF 7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


    OCR Scan     		PDF L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ