a7x transistor
Abstract: aen6 MSP430 A7X ad AEN.5 ACTL12 MDB Resistor
Text: MSP430 Family 15 Analog-To-Digital Converter Analog-To-Digital Converter Topic Page 15.1 Overview 15-3 15.2 Analog-to-Digital Operation 15-5 15.3 ADC Control Registers 15-15 15 15-1 Analog-To-Digital Converter 15 15-2 MSP430 Family MSP430 Family Analog-To-Digital Converter
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MSP430
12-bit
Bit11
a7x transistor
aen6
A7X ad
AEN.5
ACTL12
MDB Resistor
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UD61464DC
Abstract: 65536X4 RASH UD61464 RW100-50 A7X k
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
UD61464DC
65536X4
RASH
UD61464
RW100-50
A7X k
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a7y transistor
Abstract: a7x transistor transistor a7y UD61464 tv pattern generator RASH UD61464DC pd 223
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
a7y transistor
a7x transistor
transistor a7y
UD61464
tv pattern generator
RASH
UD61464DC
pd 223
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a7y transistor
Abstract: RASH soj20 Package UD61256 tsu a7y
Text: UD61256 Maintenance only 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time
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UD61256
PDIP16
SOJ20/26
UD61256
D-01109
D-01101
a7y transistor
RASH
soj20 Package
tsu a7y
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transistor a7y
Abstract: a7y transistor tsu a7y a7x transistor RASH soj20 Package ud61256 NS10000 tca 680 UD61256DC
Text: Maintenance only UD61256 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time
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UD61256
PDIP16
SOJ20/26
UD61256
D-01109
D-01101
transistor a7y
a7y transistor
tsu a7y
a7x transistor
RASH
soj20 Package
NS10000
tca 680
UD61256DC
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RASH
Abstract: transistor a7y UD61466
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
RASH
transistor a7y
UD61466
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104 k5k capacitor
Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
Text: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information
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T40/T40p,
T41/T41p,
T42/T42p
T42/T42p
92P2252
104 k5k capacitor
k5k 104 capacitor
104 capacitor k5k
ibm thinkpad t42
bmdc
ibm thinkpad t40
ibm t42
M1E wireless
ibm t40 lcd
1802 dfx
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a7y transistor
Abstract: RASH UD61466 A7X k
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
a7y transistor
RASH
UD61466
A7X k
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A970 GR
Abstract: A950 transistor a970 transistor a950 A970 A970 GR 41 a970 transistor a7x transistor a950 o transistor a950 transistor datasheet
Text: CXD3048R CD Digital Signal Processor with Built-in Digital Servo + Shock-proof Memory Controller + Digital High & Bass Boost Description The CXD3048R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and
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CXD3048R
CXD3048R
LQFP-120P-L051
P-LQFP120-16x16-0
A970 GR
A950
transistor a970
transistor a950
A970
A970 GR 41
a970 transistor
a7x transistor
a950 o transistor
a950 transistor datasheet
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transistor a950
Abstract: A950 a970 transistor a950 o transistor a950 transistor datasheet AM51A C176 CXD3029R KA2 DIODE
Text: CXD3029R CD Digital Signal Processor with Built-in Digital Servo + Shock-proof Memory Controller + Digital High & Bass Boost Description The CXD3029R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and
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CXD3029R
CXD3029R
120PIN
LQFP-120P-L051
P-LQFP120-16x16-0
transistor a950
A950
a970 transistor
a950 o transistor
a950 transistor datasheet
AM51A
C176
KA2 DIODE
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A970 GR
Abstract: A604000 A504000 sony cx 168 CXD3048R
Text: CXD3048R CD Digital Signal Processor with Built-in Digital Servo + Shock-proof Memory Controller + Digital High & Bass Boost Description The CXD3048R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and
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CXD3048R
CXD3048R
120PIN
LQFP-120P-L01
LQFP120-P-1616
A970 GR
A604000
A504000
sony cx 168
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Sumida LCD Inverter
Abstract: lenovo 2200bg SERVICE MANUAL crystal washing machine service manual rj45 cable lenovo battery Notebook Computer Lenovo 855GME 2200BG Lenovo smbios lenovo thinkpad feet
Text: ThinkPad Computer Hardware Maintenance Manual September 2005 This manual supports: ThinkPad X40 Series MT 2369, 2370, 2371, 2372, 2382, 2386 Note Before using this information and the product it supports, be sure to read the general information under “Notices” on page 145.
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39T5972
Sumida LCD Inverter
lenovo
2200bg SERVICE MANUAL
crystal washing machine service manual
rj45 cable
lenovo battery
Notebook Computer Lenovo
855GME 2200BG
Lenovo smbios
lenovo thinkpad feet
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Untitled
Abstract: No abstract text available
Text: Contents Pin Pin Functions. 1 Block Diagram. 2
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S-29530A
9630A
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sis 6326
Abstract: No abstract text available
Text: SFH6325 SFH6326 Infineon High-Speed Dual Optocoupler Dim ensions in in ches mm FEATURES • Isolation Test Voltage: 5300 V RMS • TTL Compatible • Bit Rates: 1.0 MBit/s • High Common-mode Transient Immunity • Bandwidth 2.0 MHz • Open-Collector Output
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SFH6325
SFH6326
E52744
1-888-lnfineon
SFH6325/SFH6326
sis 6326
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Untitled
Abstract: No abstract text available
Text: Ml IVnO DATA SHEET SEPTEMBER 1988 HM 65231 2K x 8 C M O S DUAL PORT RAM FEATURES . ONE SEPARATE ADDRESS/DATA PORT, ONE MULTIPLEXED ADDRESS/DATA PORT . 3 PROGRAMMABLE ARBITRATION MODES ON CHIP . INT AND BUSY OUTPUTS . FULLY STATIC OPERATION . TTL COMPATIBLE INPUT/OUTPUT
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HM65231isa
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Untitled
Abstract: No abstract text available
Text: Contents Features. 1 Pin Assignm ent. 1 Pin
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Untitled
Abstract: No abstract text available
Text: Contents Features. 1 Pin A ssignm ent. 1 Pin F unctions. 1 Block Diagram. 2
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S-29530A
9630A
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Untitled
Abstract: No abstract text available
Text: KM736V790 128Kx36 Synchronous SRAM Document Tills 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft December. 15. 1997 Prelim inary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2
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KM736V790
128Kx36
128Kx36-Bit
14ELECTRONICS
100-TQFP-1420A
15ELECTRONICS
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ad2y
Abstract: AD7Y A10y hm3 65231 mhs p-8088
Text: IH M A f l H S DATA SHEET SEPTEMBER 1988 HM 65231 2K x 8 C M O S DUAL PORT RAM FEATURES . HIGH SPEED, FAST ACCESS TIME : COMMERCIAL : 80 ns max INDUSTRIAL : 100 ns max MILITARY: 120 ns max . STANDBY CURRENT: 3 mA . OPERATING SUPPLY CURRENT: 60 mA max . BATTERY BACK UP OPERATION :
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35C102
Abstract: No abstract text available
Text: Contents Features. 1 Pin Assignment.
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S93C66D
Abstract: S93C46d S93C56D S93C56 93c 66m S-93C56ADFJ
Text: Contents Features. 1 Pin A ssignm Pin F un ctions. 1 Block Diagram . 2
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Untitled
Abstract: No abstract text available
Text: KM29V16000ATS_ FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBERS p a ra m e te r: 5ms Typ. —» 2ms(Typ.).
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KM29V16000ATS
264-Byte
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D0243
Abstract: No abstract text available
Text: FLASH MEMORY KM29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Celi Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29V32000TS/RS
250us
D0243
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Untitled
Abstract: No abstract text available
Text: Contents F e a tu re s . 1 Pin A ssignm en t.
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