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    A7A15 Price and Stock

    AMD XA7A15T-1CPG236Q

    IC FPGA 106 I/O 238CSBGA
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    AMD XA7A15T-1CSG325Q

    IC FPGA 150 I/O 324CSBGA
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    AMD XA7A15T-2CSG324I

    IC FPGA 210 I/O 324CSBGA
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    TE Connectivity W57-XA7A15A10-20

    CIR BRKR THRM
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    AMD XA7A15T-1CSG324Q

    IC FPGA 210 I/O 324CSBGA
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    A7A15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M395T5160QZ4-YE68

    Abstract: M395T5663QZ4 M395T2863QZ4-YE68 M395T5663QZ4-YE68
    Text: 1.55V FBDIMM DDR2 SDRAM DDR2 1.55V Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4 M395T5160QZ4-YE68 M395T5663QZ4 M395T2863QZ4-YE68 M395T5663QZ4-YE68

    M395T5160QZ4-CE66

    Abstract: M395T1G60QJ4-CE68 M395T5160QZ4-CE68 M395T5160QZ4-CE65 M395T5663QZ4-CE66 M395T2863QZ4-CE65 M395T5163QZ4-CE68 M395T5663QZ4 M395T5663QZ4-CE65 M395T5160QZ4-CE6
    Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4 M395T5160QZ4-CE66 M395T1G60QJ4-CE68 M395T5160QZ4-CE68 M395T5160QZ4-CE65 M395T5663QZ4-CE66 M395T2863QZ4-CE65 M395T5163QZ4-CE68 M395T5663QZ4 M395T5663QZ4-CE65 M395T5160QZ4-CE6

    M395T5160QZ4-CE65

    Abstract: M395T5663QZ4-CE65 M395T5663QZ4 sda 5241 M395T5160QZ4-CE68 M395T5663QZ4-CE66 m395t2863qz4-ce68 M395T5160QZ4-CE66 M395T1G60QJ4-CE68 DDR-667
    Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4 M395T5160QZ4-CE65 M395T5663QZ4-CE65 M395T5663QZ4 sda 5241 M395T5160QZ4-CE68 M395T5663QZ4-CE66 m395t2863qz4-ce68 M395T5160QZ4-CE66 M395T1G60QJ4-CE68 DDR-667

    Untitled

    Abstract: No abstract text available
    Text: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The


    Original     		PDF X28C512, X28C513 X28C513 FN8106

    AT29C512-70JC

    Abstract: No abstract text available
    Text: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes


    Original     		PDF AT29C512 AT29C512 0456G AT29C512-70JC

    1-5C78

    Abstract: intersil CERAMIC, LCC-32 X28C512 intersil 15t2
    Text: X28C512, X28C513 Data Sheet May 23, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The


    Original     		PDF X28C512, X28C513 FN8106 X28C513 1-5C78 intersil CERAMIC, LCC-32 X28C512 intersil 15t2

    AT29C512-90

    Abstract: 32PIN AT29C512-12PC AT29C512 AT29C512-12 AT29C512-15 AT29C512-70 0456E
    Text: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes


    Original     		PDF AT29C512 AT29C512 0456E AT29C512-90 32PIN AT29C512-12PC AT29C512-12 AT29C512-15 AT29C512-70

    M395T5163FB4

    Abstract: No abstract text available
    Text: Rev. 1.0, Jul. 2010 M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin Fully Buffered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin 128Mbx8 512Mx72 M395T5163FB4

    TYPE 85.32

    Abstract: X28C512 intersil
    Text: X28C512, X28C513 Data Sheet September 29, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile


    Original     		PDF X28C512, X28C513 X28C513 FN8106 TYPE 85.32 X28C512 intersil

    AT29C512-12PC

    Abstract: AT29C512-90
    Text: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes


    Original     		PDF AT29C512 AT29C512 0456F AT29C512-12PC AT29C512-90

    M395T5663QZ4

    Abstract: M395T2863QZ4-CD59 CI 3060 elsys M395T5160QZ4 CI 4940 M395T5163QZ
    Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4 M395T5663QZ4 M395T2863QZ4-CD59 CI 3060 elsys M395T5160QZ4 CI 4940 M395T5163QZ

    AT29C512-90

    Abstract: AT29C512 AT29C512-70 AT29C512-70JU AT29C512-70TU AT29C512-90JU
    Text: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes


    Original     		PDF AT29C512 AT29C512 0456i AT29C512-90 AT29C512-70 AT29C512-70JU AT29C512-70TU AT29C512-90JU

    Untitled

    Abstract: No abstract text available
    Text: 1.55V FBDIMM DDR2 SDRAM DDR2 1.55V Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4

    M395T5160QZ4-CE65

    Abstract: No abstract text available
    Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL


    Original     		PDF 240pin 60FBGA 256Mbx4 1Gx72 M395T1G60QJ4 M395T5160QZ4-CE65

    X28C010

    Abstract: X28C512 X28C512D X28C512DM X28C512J X28C513 X28C513EM X28C512 intersil
    Text: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The


    Original     		PDF X28C512, X28C513 X28C513 FN8106 X28C010 X28C512 X28C512D X28C512DM X28C512J X28C513EM X28C512 intersil

    AT29C512-12PC

    Abstract: AT29C512 AT29C512-12 AT29C512-15 AT29C512-70 AT29C512-90
    Text: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes


    Original     		PDF AT29C512 AT29C512 0456D AT29C512-12PC AT29C512-12 AT29C512-15 AT29C512-70 AT29C512-90

    Untitled

    Abstract: No abstract text available
    Text: 123456789ABCD8ECF9A2CCC C 1 12324567829AB7CDE7AF4AAB77 CD5AEF1A96BF13FA16EF1A11 34E671151 1111151 1!"1#1$753FA%839AB1 111&'51  1!"1 #1$753FA%839AB1


    Original     		PDF 123456789ABCD8ECF9 11111111111111111123435671839AB1CD5AEFAB 12324567829AB7CDE7AF4A 16EF1 34E67 839AB1 3E47A 1651BA

    Untitled

    Abstract: No abstract text available
    Text: AT29C512 Features Fast Read Access Tim e - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 bytes/sector) Internal Address and Data Latches for 128-Bytes Internal Program Control and Timer


    OCR Scan     		PDF AT29C512 128-Bytes AT29C512 AT29C512-12JC AT29C512-12PC AT29C512-12TC AT29C512-12JI AT29C512-12PI AT29C512-12TI AT29C512-15JC

    Untitled

    Abstract: No abstract text available
    Text: AT29LV512 Features • • • • Single Supply Voltage, Range 3V to 3.6V 3-Volt-Only Read and W rite Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 |^A CMOS Standby Current Fast Read Access Tim e - 200 ns Sector Program Operation


    OCR Scan     		PDF AT29LV512 128-Bytes AT29LV512-15JC AT29LV512-15TC AT29LV512-15JI AT29LV512-15TI AT29LV512-20JC AT29LV512-20TC AT29LV512-20JI AT29LV512-20TI

    E2951

    Abstract: AT27C512 ATMEL AT27c512 PLCC Atmel 27C512R AT27C512R
    Text: AT27C512R Features • • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 |xA max. Standby 20 mA max. Active at 5 MHz Wide Selection of JEDEC Standard Packages 28-Lead 600-mil PDIP and Cerdip 32-Pad PLCC and LCC


    OCR Scan     		PDF AT27C512R 28-Lead 600-mil 32-Pad le2-87648 28DW6 E2951 AT27C512 ATMEL AT27c512 PLCC Atmel 27C512R AT27C512R

    AT29LV102415JI

    Abstract: No abstract text available
    Text: AT29LV1024 Features • • • • • • • • • • • • Single Voltage, Range 3V to 3.6V Supply 3-Volt-Only Read and Write Operation Software Protected Programming Fast Read Access Time -150 ns Low Power Dissipation 15mA Active Current 50 jxA CMOS Standby Current


    OCR Scan     		PDF AT29LV1024 AT29LV1024 AT29LV1024-15JC AT29LV1024-15TC AT29LV1024-15JI AT29LV1024-15TI AT29LV1024-20JC AT29LV1024-20TC AT29LV1024-20JI AT29LV1024-20TI AT29LV102415JI

    keyboard controller 8042

    Abstract: weitek 80387 interfacing of RAM and ROM with 8086 386DX pipeline architecture for 80386 T704 t607 t309 logic diagram of 74LS245
    Text: ELITE MICROELECTRONICS 2TE D • 3273050 0000011 b ■ ~ V Z-C? 0 - / O ELITE 80386 PC/AT EAGLE CHIPSET e88C31i & e88C312 An Overview The Eagle 386 AT chip set is designed for high performance PC-ATs with 80386DX running at 20/25/33 MHz. Major features of the Eagle chip set include:


    OCR Scan     		PDF e88C31i e88C312 80386DX 386DX RST387 ADSTB16 387RDY- keyboard controller 8042 weitek 80387 interfacing of RAM and ROM with 8086 pipeline architecture for 80386 T704 t607 t309 logic diagram of 74LS245

    Untitled

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * * * Single Supply Voltage, Range 3V to 3.6V 3-Volt Only Read and Write Operation Software Protected Programming Low Power Dissipation - 15 mA Active Current - 40 pA CMOS Standby Current Fast Read Access Time - 200 ns Sector Program Operation


    OCR Scan     		PDF AT29LV512 AT29LV512

    Untitled

    Abstract: No abstract text available
    Text: «O V i C 1992 MEC il PD431018 65,536 x 18-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /1/PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology,


    OCR Scan     		PDF PD431018 18-Bit /1/PD431018 536-word 18-bit 44-Pin XPD431018 PD431018