Untitled
Abstract: No abstract text available
Text: General Purpose, Pulse and DC Transient Suppression A72 Series Polypropylene Film/Foil, Axial Overview Applications The A72 Series is a capacitor with polypropylene film and metal foil or metallized film and metal foil electrodes. The capacitor is encapsulated in self-extinguishing resin in a box of material
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Untitled
Abstract: No abstract text available
Text: R1Q4A7236 / R1Q4A7218 / R1Q4A7209 Series R1Q4A7236ABG Series R1Q4A7218ABG Series R1Q4A7209ABG Series 72-Mbit DDRII SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q4A7236 is a 2,097,152-word by 36-bit, the R1Q4A7218 is a 4,194,304-word by 18-bit, and the
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R1Q4A7236
R1Q4A7218
R1Q4A7209
R1Q4A7236ABG
R1Q4A7218ABG
R1Q4A7209ABG
72-Mbit
152-word
36-bit,
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Untitled
Abstract: No abstract text available
Text: 72QM2 R1Q3A7236 / R1Q3A7218 / R1Q3A7209 Series R1Q3A7236ABG Series R1Q3A7218ABG Series R1Q3A7209ABG Series 72-Mbit QDR II SRAM 4-word Burst Rev. 0.08a 2011.05.23 Description The R1Q3A7236 is a 2,097,152-word by 36-bit, the R1Q3A7218 is a 4,194,304-word by 18-bit, and the
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72QM2
R1Q3A7236
R1Q3A7218
R1Q3A7209
R1Q3A7236ABG
R1Q3A7218ABG
R1Q3A7209ABG
72-Mbit
152-word
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Untitled
Abstract: No abstract text available
Text: R1QHA72 / R1QLA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description
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R1QHA72
R1QLA72
R1QBA7236ABG
R1QBA7218ABG
R1QBA7209ABG
R1QEA7236ABG
R1QEA7218ABG
R1QEA7209ABG
R1QHA7236ABG
R1QHA7218ABG
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
b72 voltage regulator
marking A93
A75 marking code
marking a86
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B83 004
Abstract: marking a86 b72 voltage regulator
Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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MN18R162
MP18R162
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
B83 004
marking a86
b72 voltage regulator
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marking a86
Abstract: No abstract text available
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
marking a86
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Untitled
Abstract: No abstract text available
Text: BAS70W SERIES SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 70 Volts CURRENT 0.2 Amperes FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Lead free in comply with EU RoHS 2002/95/EC directives.
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BAS70W
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2011-REV
RB500V-40
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Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
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BAS70AW
Abstract: BAS70AW-T1 BAS70CW BAS70SW BAS70W BAS70W-T1 BAS70W-T3 a72 sot BAS70WT
Text: BAS70W / AW / CW / SW WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage L ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application B ! Plastic Material – UL Recognition Flammability
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BAS70W
OT-323,
MIL-STD-202,
OT-323
BAS70W/AW/CW/SW
BAS70AW
BAS70AW-T1
BAS70CW
BAS70SW
BAS70W-T1
BAS70W-T3
a72 sot
BAS70WT
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
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A74 marking
Abstract: a74 sot BAS70 BAS70A BAS70A-T1 BAS70C BAS70S BAS70-T1 BAS70-T3 sot-23 diode marking t3
Text: BAS70 / A / C / S WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage L ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application B ! Plastic Material – UL Recognition Flammability
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BAS70
OT-23,
MIL-STD-202,
OT-23
BAS70/A/C/S
A74 marking
a74 sot
BAS70A
BAS70A-T1
BAS70C
BAS70S
BAS70-T1
BAS70-T3
sot-23 diode marking t3
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Untitled
Abstract: No abstract text available
Text: BAS70 SERIES SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 70 Volts CURRENT 0.2 Amperes SOT-23 Unit：inch mm FEATURES • Fast switching speed 0.120(3.04) 0.110(2.80) • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC
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BAS70
OT-23
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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a74 marking code
Abstract: No abstract text available
Text: BAS70-AU SERIES SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 70 Volts CURRENT 0.2 Amperes SOT-23 Unit：inch mm FEATURES • Fast switching speed 0.120(3.04) 0.110(2.80) • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC
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BAS70
TS16949
AECQ101
2002/95/EC
IEC61249
OT-23
OT-23,
MIL-STD-750,
a74 marking code
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
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Untitled
Abstract: No abstract text available
Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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A74 marking
Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
A74 marking
a80 marking code
MS18R3266AH0-CT9
a74 marking code
diode code B74
marking A32
marking code B38
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SoRIMM
Abstract: ic marking B48 711 B34 a64 pcb rdram 600 mhz marking a20 5pin
Text: Advance Information RAMBUS Rambus® SO-RIMM Module with 128/144Mb RDRAMs Overview Key Timing Parameters The Rambus® SO-RIMM™ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including computer memory, mobile “Thin and Light” PCs,
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128/144Mb
128Mb/144Mb
DL0076
SoRIMM
ic marking B48
711 B34
a64 pcb
rdram 600 mhz
marking a20 5pin
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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arcotronics kp
Abstract: A72M Polypropylene CAPACITOR Arcotronics kp 1.72
Text: A72 ARCOffiONICS Loose Taped KP Series FILM-FOIL POLYPROPYLENE CAPACITOR HIGH CURRENT APPLICATIONS 4U±s Lr- g> Typical applications: switching spikes suppression and resonant capacitor in SMPS, deflection circuits in TV-sets S-correction and fly-back tuning , applications with high
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arcotronics kp
Abstract: arcotronics ac film capacitors 1.40 T3150 arcotronics 0.22 1000v F0220 arcotronics mkp data code Arcotronics kp 1.72 c 87 arcotronics
Text: A72 ARCOTRONICS Loose Taped KP Series FILM-FOIL POLYPROPYLENE CAPACITOR HIGH CURRENT APPLICATIONS 40+5 Lm ax Typical applications: switching spikes suppression and resonant capacitor in SMPS, deflection circuits in TV-sets Scorrection and fly-back tuning , applications with high voltage
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160Vac
300Vac
arcotronics kp
arcotronics ac film capacitors 1.40
T3150
arcotronics 0.22 1000v
F0220
arcotronics mkp data code
Arcotronics kp 1.72
c 87 arcotronics
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ERB44
Abstract: ERB44-08 T151 T930
Text: ERB44 ia I < s a a ia t ^ ^ - K : Outline Drawings FAST RECOVERY DIODE : Features :7jv : Marking High voltage by mesa design • f t flMRtt # 7- 3- K:» High reliability C olor code : Green • E J ii I Applications Abridged type name 7* Voltage class High speed sw itch in g .
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ERB44
30tf3^
I95t/R89)
ERB44-08
T151
T930
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