63C159
Abstract: 74HC14T P14DB se216 4HC14 bt 338 29C322 ti122 TC1628 CA20B
Text: 3 CPU RST # HD#[0.63] VCCT R64 5 56 .2 _1% B PR I# RS#0 HD#0 HD#1 HD#2 HD#3 HD#4 HD#5 HD#6 HD#7 HD# 8 HD#9 HD#10 HD#11 HD#12 HD#13 HD#14 HD#15 HD#16 HD#17 HD#18 HD#19 HD#20 HD#21 HD#22 HD#23 HD#24 HD#25 HD#26 HD#27 HD#28 HD#29 HD#30 HD#31 HD#32 HD#33 HD#34
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330UF/4V
CORE/13A
PK/15A
00-D0
63C159
74HC14T
P14DB
se216
4HC14
bt 338
29C322
ti122
TC1628
CA20B
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Pin100
Abstract: SK-96380 6110R
Text: D C B A GND 1 C11 10n MCUVCC DVSS C9 10n DVCC DVSS C7 10n DVCC GND C5 10n MCUVCC 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 GND
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Pin10
Pin11
Pin12
Pin13
Pin14
Pin15
Pin16
Pin17
Pin18
Pin19
Pin100
SK-96380
6110R
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Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 23mA Max. 2mA (Max.)
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BS62LV2006
BS62L
R0201-BS62LV2006A
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AMIS30663
Abstract: SK9633 sub-d 9 pin
Text: D C B A X20A 2x9 Header 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 X20B 2 2x9 Header 3 4 5 6 7 8 9 MCUVCC 10 11 12 C5 13 10n 14 15 GND 16 17 18 1 2 MCUVCC 3 4 5 C11 6 10n 7 8 GND 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
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Pin10
Pin11
Pin12
Pin13
Pin14
Pin15
Pin16
Pin17
Pin18
Pin19
AMIS30663
SK9633
sub-d 9 pin
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K4S5111632-U75
Abstract: TLE6250 MB91F46 lcd color monitor p15-1 RC39A GS 220P PIN160 TLE6250GV33 R38A-B r40b
Text: 2 3 4 5 6 7 Pin[1.176] 8 This part is not assembled ! J6A CON44 DB7 DB6 DB5 DB4 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 J4 14 13 12 11 10 9 8 7 6 5 4 3 2 1 MCUVCC5_1 Pin175
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CON44
Pin175
Pin174
Pin173
Pin172
Pin171
Pin170
Pin169
Pin168
Pin167
K4S5111632-U75
TLE6250
MB91F46
lcd color monitor p15-1
RC39A
GS 220P
PIN160
TLE6250GV33
R38A-B
r40b
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CD4016CN
Abstract: CD4016MW 10B3 CD4016C a7 P-CHANNEL cd4016cn datasheet CD4016CJ CD4016M CD4016MJ J14A
Text: CD4016M CD4016C Quad Bilateral Switch General Description The CD4016M CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS CMOS circuits to provide an extremely high ‘‘OFF’’ resistance and low ‘‘ON’’ resistance switch The switch will pass
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CD4016M
CD4016C
CD4016CN
CD4016MW
10B3
a7 P-CHANNEL
cd4016cn datasheet
CD4016CJ
CD4016MJ
J14A
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RC39F
Abstract: MB91F469GB b20 p03 JP41 SW1S r40a Y20 100N MAX3232CSE T RC41E 512Kx32x4
Text: 1 2 3 4 5 6 7 8 J1A DB7 DB6 DB5 DB4 U1 J21 8 7 6 5 4 3 2 1 A 8 7 6 5 4 3 2 1 P00/D24-31 J3 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 P01/D16-23 J4 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 P02/D8-15 J5 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 MCU_Y13 MCU_Y12 MCU_Y11 MCU_W11 MCU_V11 MCU_U11
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P00/D24-31
P01/D16-23
P02/D8-15
4MBx16
VDD35
16MBit
1Mx16)
SK-91469G-256BGA
RC39F
MB91F469GB
b20 p03
JP41
SW1S
r40a
Y20 100N
MAX3232CSE T
RC41E
512Kx32x4
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EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
Text: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l
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EDH411MN-10/12/15
EDH411MN
EDH411MN-10
EDH411MN-12
EDH411MN-15
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suss Instruments
Abstract: D3501 SN74ALS2238 gba 2674
Text: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, APRIL 1990 N PACKAGE TOP VIEW Independent Asychronous Inputs and Outputs Bidirectional 30 R lT B DBF BO B1 B2 GND B3 B4 B5 B6 GND VCC 12 29 Vc c A7 A8 LDCKA FULLA UNCKB EMPTYB
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SN74ALS2238
D3501,
576-bit
ALS2238
suss Instruments
D3501
SN74ALS2238
gba 2674
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MCM68A364
Abstract: 68a308 a1718 MCM68A332 kbyte 68A316E
Text: Vßfl A ID CS 00 D1 D2 03 AO A1 A2 A3 v ss 4 1 - 2 - 3 - 4 5 - 6 7 - ß -i 5 10 w m M r M l "I 23 22 21 20 19 IB V 16 IS H 13 ¥cc A7 1 24 I VüD A6 / A9 A8 A? A5 A4 A3 A? 3 04 C5 r A? 23 Vc< Ac 22 A9 A5 21 A 12 A4 20 1 A3 19 - A 10 A2 1 p 18 - A11 AI 06 AO
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MCM68A364
MCM68A332
68a308
a1718
MCM68A332
kbyte
68A316E
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Untitled
Abstract: No abstract text available
Text: ADE-203-234B Z HM628128B Series 131,072-word x 8-bit High Speed CMOS Static RAM Rev. 2.0 March 20, 1995 HITACHI The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, h igher perform ance and low pow er consum ption by em ploying 0.8 pm Hi-CMOS
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ADE-203-234B
072-word
HM628128B
525-mil
600-mil
HM628128BLP-7
HM628128BLP-8
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k0247
Abstract: KS6078 811ks Solar power bank calculator chip 48QFP a616b6 RM 40 pin LCD 4 digit KS6129 KS6525
Text: APPLICATION GUIDE 8. CALCULATOR APPLICATION 8.1 KS6225: mirror type of KS6325 A. For use with a solar cell M Q |— —* ZS •_! C 1— I 3 .!_ ! .1 . U . 1— •• .L _ .1 I r b3 c3 a4 b4 C4 a5 b5 c5 a6 b6 c6 a7 24 23 22 21 20 19 18 17 16 15 14 13 12 25
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KS6225:
KS6325
KS6225
2240x2120
APS14
20-30pF)
k0247
KS6078
811ks
Solar power bank
calculator chip
48QFP
a616b6
RM 40 pin LCD 4 digit
KS6129
KS6525
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2364A
Abstract: No abstract text available
Text: D e | 7flllD73 □□llflfll 7 f~ ROCKWELL INTL/ SC PDTS 7811073 ROCKWELL INTL, SC 62C 1 1889 PDTS D T ' + 6 ' I 3 ’J 5 Ì R2364A Memory Producta « I * Rockwell R2364A 64K 8K X 8 STATIC ROM DESCRIPTION E/E The R 2364A 2, R 2364A 25 and R 2364A 3 are 65,536-bit static
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7flllD73
R2364A
R2364A
536-bit
24-pin,
64K-bit
tri-s1073
7flllD73
L1891
2364A
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MP 130B
Abstract: MP 130B 00 TL 650 ht
Text: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n tr o ller FEA TU R ES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options:
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Z86E30/E31/E40
Z86E30
Z86E31
Z86E40
28-Pin
Z86E30/31
40-Pin
44-Pin
MP 130B
MP 130B 00
TL 650 ht
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Untitled
Abstract: No abstract text available
Text: JHPD23C2000A 2,097,152-Bit Mask-Programmable CM OS ROM NEC NEC Electronics Inc. Description Pin Configuration Th e /¿PD 23C 2000A is a 2,097,152-bit ROM fabricated w ith C M O S siiicon-gate technology. This device is static in operation and can be organized as 131,072 w ords by
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JHPD23C2000A
152-Bit
152-bit
40-Pin
juPD23C2000A-1
PD23C2000A
fiPD23C2000A
fiPD23C2000A-1
JJPD23C2000A
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upD23C1001
Abstract: No abstract text available
Text: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /uPD23C1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power
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1001E
uPD23C1001E
072-word
600-mil,
32-pin
upD23C1001
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Untitled
Abstract: No abstract text available
Text: FAST 74F776 Signetics Pi-Bus Transceiver FAST Products Octal Bidirectional Latched Transceiver Open Collector Product Specification FEATURES • O ctal Latched Transceiver TYPICAL PROPAGATION DELAY TYPE • Drives heavily loaded backplanes w ith eq uivalen t load Im pedances
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74F776
74F776
28-Pin
600mil
500ns
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Untitled
Abstract: No abstract text available
Text: JUPD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Pin Configuration Description T h e /JP D 23C 16000 is a w ith C M O S silic o n -g a te in o p e ra tio n an d has T T L -c o m p a tib le inputs 16,777,216-bit R O M fa b ric a te d
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JUPD23C16000
216-Bit
216-bit
42-Pin
MPD23C16000
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AHCT245
Abstract: SN54AHCT245 SN74AHCT245
Text: SN54AHCT245, SN74AHCT245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS S C LS 233E - O C TO BE R 1995 - R EVISED JU NE 1997 • EPIC Enhanced-Performance Implanted CMOS Process • High Latch-Up Immunity Exceeds 250 mA Per JESD 17 • • SN54AHC T245 . . . J OR W PACKAGE
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SN54AHCT245,
SN74AHCT245
SCLS233E
MIL-STD-883,
AHCT245
SN54AHCT245
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54F776
Abstract: GDFP2-F28 GDIP1-T28
Text: Product specification Philips Semiconductors Military FAST Products Octal bidirectional latched pi-bus transceiver DESCRIPTION The 54F776 is an octal latched transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. This bus has a loaded characteristic
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54F776
54F776
500ns
500ns
711002b
GDFP2-F28
GDIP1-T28
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Untitled
Abstract: No abstract text available
Text: pPD23C4000A 4,194,304-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration T h e /JP D 23C 4000A is a 4,194,304-bit ROM fa b ric a te d w ith C M O S silic o n -g a te technology. T h e d e v ic e is s ta tic in o p e ra tio n an d has th re e -s ta te o u tp uts, fu lly T T L c o m p a tib le in puts an d outp uts, an d an o u tp u t e n ab le
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pPD23C4000A
304-Bit
304-bit
40-Pin
JHPD23C4000A
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N82S212
Abstract: 82S212 N82S212F S82S212 S82S212F
Text: BIPOLAR MEMORY DIVISION MAY 1982 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The organization of the 82S212 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit can be used as a tag fo r each word stored. The 82S212 is ideal fo r scratch-pad, push
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2304-BIT
256x9)
82S212
82S212
N82S212
N82S212F
S82S212
S82S212F
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74ABT651
Abstract: 74ABT651D 74ABT651N 74ABT651PW 74ABT652 74ABT652 Philips
Text: INTEGRATED CIRCUITS 74ABT651 Octal transceiver/register, inverting 3-State Product specification 1995 Feb 23 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 711002b 000700b 121 m \ This Material Copyrighted By Its Respective Manufacturer Product specification
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74ABT651
711002b
000700b
74ABT651
74ABT652
64mA/-32mA
500mA
TSSOP24:
74ABT651D
74ABT651N
74ABT651PW
74ABT652
74ABT652 Philips
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93479ADC
Abstract: 93479ADMQB 93479ALMQB 93479DC 93479DMQB 93479LMQB E28A J22A 96755
Text: 93479 ZWÄ National ÉüA Semiconductor 93479 256 x 9-Bit Static Random Access Memory General Description Features The 93479 is a 2304-bit read/write Random Access Memo ry RAM , organized as 256 words by nine bits per word. It is ideally suited for scratchpad, small buffer and other applica
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2304-bit
3479Aâ
22-Pin
28-Pin
TL/D/9675-10
TL/D/9675-11
93479ADC
93479ADMQB
93479ALMQB
93479DC
93479DMQB
93479LMQB
E28A
J22A
96755
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