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    A64 TRANSISTOR Search Results

    A64 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A64 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1200 MHz A64/ SMA64 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA64 MIL-STD-883

    TRANSISTOR A64

    Abstract: a64 TRANSISTOR SMA64 CA64
    Text: A64 / SMA64 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA64 MIL-STD-883 TRANSISTOR A64 a64 TRANSISTOR SMA64 CA64

    MBS 6-B5

    Abstract: CY7C960 Family Users Guide VIC64 Users interrupt vhdl ld 18 CY7C960 CY7C961 Cypress VMEbus FF000000 MD32
    Text: Using the Slave VIC CY7C960/961 Many VME boards, especially I/O Local Interrupts boards, need only be aware of VME Slave transactions. Most A64/A40 Support commercially available VME interface chips are caĆ pable of both Master and Slave VME transactions


    Original     		PDF CY7C960/961) A64/A40 CY7C964 EEEEEE00" MBS 6-B5 CY7C960 Family Users Guide VIC64 Users interrupt vhdl ld 18 CY7C960 CY7C961 Cypress VMEbus FF000000 MD32

    marking A64 amplifier

    Abstract: A64 sot23-5 transistor ic equivalent book
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 marking A64 amplifier A64 sot23-5 transistor ic equivalent book

    ADS805

    Abstract: OPA642 OPA643 OPA643P 1RF 630
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 ADS805 OPA642 OPA643P 1RF 630

    ADS805

    Abstract: OPA642 OPA643 OPA643P 5v audio amplifier
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 ADS805 OPA642 OPA643P 5v audio amplifier

    ADS805

    Abstract: OPA642 OPA643 OPA643P 1RF 630
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 ADS805 OPA642 OPA643P 1RF 630

    TRANSISTOR A64

    Abstract: No abstract text available
    Text: A64/SMA64 10 TO 1200 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · HIGH GAIN - TWO STAGES: 26 dB (TYP.) · ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2°, 100-1000 MHz · LOW VSWR: 1.2:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)*


    Original     		PDF A64/SMA64 SMA64 TRANSISTOR A64

    Untitled

    Abstract: No abstract text available
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643

    SOT23-5 MARKING V4

    Abstract: opa 275
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 SOT23-5 MARKING V4 opa 275

    carbon composition resistors

    Abstract: PI sot23-5 fast photodiode amplifier ADS805 OPA642 OPA643 OPA643P 1RF 630
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 carbon composition resistors PI sot23-5 fast photodiode amplifier ADS805 OPA642 OPA643P 1RF 630

    Untitled

    Abstract: No abstract text available
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643

    ADS805

    Abstract: OPA642 OPA643 OPA643P 1RF 630 CURRENT TRANSFORMER transimpedance
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 ADS805 OPA642 OPA643P 1RF 630 CURRENT TRANSFORMER transimpedance

    1RF 630

    Abstract: ADS805 OPA642 OPA643 OPA643P OPA643PB MARKING VB SOT23-5
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


    Original     		PDF OPA643 90dBc 800MHz OT23-5 OPA643 DEM-OPA64XP-N OPA643P OPA643PB DEM-OPA64XU-N 1RF 630 ADS805 OPA642 OPA643PB MARKING VB SOT23-5

    RF TRANSISTOR 1.5 GHZ A64

    Abstract: TRANSISTOR A64 A64 marking amplifier MMIC A64 marking SGA-6489 marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64
    Text: Product Description Stanford Microdevices’ SGA-6489 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6489 SGA-6489 DC-3500 EDS-100621 RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 A64 marking amplifier MMIC A64 marking marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64

    TRANSISTOR A64

    Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
    Text: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6486 SGA-6486 DC-4500 EDS-100615 TRANSISTOR A64 RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking A64 marking amplifier marking A64 amplifier

    RF TRANSISTOR 1.5 GHZ A64

    Abstract: MMIC A64 marking A64 marking amplifier
    Text: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6486 EDS-100615 RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking A64 marking amplifier

    vme 3u board standards

    Abstract: CY7C960 CY7C961 CY7C964 FF000000 MD32 VME64 vme bus specification vhdl Cypress VMEbus Interface Handbook CY7C960 Family Users Guide
    Text: faxid: 5709 Using the Slave VIC CY7C960/961 Many VME boards, especially I/O boards, need only be aware of VME Slave transactions. Most commercially available VME interface chips are capable of both Master and Slave VME transactions and require some local intelligence, such as a


    Original     		PDF CY7C960/961) vme 3u board standards CY7C960 CY7C961 CY7C964 FF000000 MD32 VME64 vme bus specification vhdl Cypress VMEbus Interface Handbook CY7C960 Family Users Guide

    vme bus specification vhdl

    Abstract: VIC64 Users CY7C960 CY7C961 CY7C964 FF000000 MD32 VIC64 VME64 vhdl code for simple microprocessor
    Text: faxid 5709 Using the Slave VIC CY7C960/961 Many VME boards, especially I/O boards, need only be aware of VME Slave transactions. Most commercially available VME interface chips are capable of both Master and Slave VME transactions and require some local intelligence, such as a


    Original     		PDF CY7C960/961) vme bus specification vhdl VIC64 Users CY7C960 CY7C961 CY7C964 FF000000 MD32 VIC64 VME64 vhdl code for simple microprocessor

    TRANSISTOR A64

    Abstract: MMBT pnp
    Text: MPS A64/MPSW64/MMBT A64 2 3 National Semiconductor MPSW64 MPSA64 MMBTA64 TO- 9 2 T L / G /1 0 1 0 Q - 5 T L / G /1 0 1 0 0 - 1 PNP Darlington Transistor Electrical Characteristics T * = 25‘ C unless otherw ise noted Param eter Sym bol Min Max Units OFF C HA R A C TER ISTIC S


    OCR Scan     		PDF A64/MPSW64/MMBT MPSA64 MPSW64 MMBTA64 100fxA TRANSISTOR A64 MMBT pnp

    pt 100 - to92

    Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
    Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a


    OCR Scan     		PDF MPS-A63, MPS-A64 MPS-A63 MPS-A63 100mA 100kHz) 300ns pt 100 - to92 pt 100 to92 MPS-A64 MPSA63

    WJ-A64

    Abstract: wj 508 WJA64 BC 148 TRANSISTOR TRANSISTOR "BC 258" TRANSISTOR BC 252 transistor BC 148
    Text: uuU A64 / SMA64 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. HIGH GAIN - TWO STAGES: 26 dB (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°,100-1000 MHz ♦ LOW VSWR: 1.2:1 (TYP.) Outline Drawings


    OCR Scan     		PDF SMA64 Input/Out25 1-800-WJ1 WJ-A64 wj 508 WJA64 BC 148 TRANSISTOR TRANSISTOR "BC 258" TRANSISTOR BC 252 transistor BC 148

    WJ-A64

    Abstract: No abstract text available
    Text: WJ-A64 / SMA64 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER m ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. HIGH GAIN - TWO STAGES: 26 dB (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2°, 100-1000 MHz ♦ LOW VSWR: 1.2:1 (TYP.) Outline Drawings


    OCR Scan     		PDF WJ-A64 SMA64

    transistor TA78

    Abstract: TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64
    Text: h -7 > y 7s £ /T ra n sisto rs TA54/T A57/T A60/T A61 /T A64/T A76/T A78 T A 5 4 /T A 5 7 /T A 6 0 /T A 6 1 T A 6 4 /T A 7 6 /T A 78 1 f c f T i i - ' f i ' - i - M y ' =i > Epitaxial Planar Silicon Transistor Arrays • W F ^ T liill/ D im e n s io n s U n it: mm)


    OCR Scan     		PDF TA54/T A57/T A60/T A64/T A76/T 12pin TA54/TA57/TA60/TA61 /TA64/T A76/TA78 transistor TA78 TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64