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    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05, 340282A, 25V05 A6340282A RIC0824 25VN05

    FM25V10

    Abstract: FM25V10-G FM25VN10 25VN10
    Text: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) 25VN10 A6340282A RIC0824 FM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25V10-G FM25VN10 25VN10

    FM25V02

    Abstract: FM25VN02 FM25V02-G
    Text: Preliminary FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25VN02 FM25V02-G

    FM25V05

    Abstract: FM25V05-G
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) 25VN05 A6340282A RIC0824 FM25V05 FM25V05-G FM25VN05-G FM25V05-G

    FM24V02-GTR

    Abstract: FM24V02 FM24V05 FM24VN02 FM24VN05
    Text: Product Preview FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24V02 256Kb FM24V02 256Kbit 340282A, 24V02 A6340282A RIC0824 24VN02 FM24V02-GTR FM24V05 FM24VN02 FM24VN05

    FM24V05-GTR

    Abstract: FM24V05 FM24VN05 24V05
    Text: Preliminary FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24V05 512Kb FM24V05 512Kbit 24V05 A6340282A RIC0824 24VN05 FM24V05-GTR FM24VN05 24V05

    FM24V02

    Abstract: FM24V05 FM24VN02 FM24VN05
    Text: Preliminary FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24V02 256Kb FM24V02 256Kbit RIC0824 24VN02 A6340282A FM24V05 FM24VN02 FM24VN05

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25P16 16Kb Ultra Low Power Serial SPI F-RAM Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2044 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Member of a New Family of Low Energy


    Original     		PDF FM25P16 FM25P16 16-kilobit FM25P16, FM25P16-G A6340282A RIC1028 2044x8.

    FM24VN10

    Abstract: FM24V10 FM24V10-GTR
    Text: Preliminary FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24V10 FM24V10 24V10 A6340282A RIC0824 24VN10 FM24V10-G FM24VN10 FM24V10-GTR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) FM25V10, 340282A, 25V10 A6340282A RIC0824 25VN10