C1984
Abstract: C1986 C198 CY7C198 7C19825
Text: 7c198: 10/25/89 Revision: February 29, 1996 CY7C198 Features Pin Configurations CerDIP Top View I/O1 A2 A3 A4 A5 A6 A7 I/O2 SENSE AMPS A1 ROW DECODER A0 1024 x 32 x 8 ARRAY A8 A 14 1 32 31 30 A13 A 12 NC V CC A7 2 28 VCC 2 27 WE A7 3 26 A4 A8 A6 A8 25 A3 5
|
Original
|
PDF
|
7c198:
CY7C198
CY7C198
600milwide
32lead
C1984
C1986
C198
7C19825
|
C1984
Abstract: C1985 C1983 16 C1986 C1983 C198 CY7C198
Text: 7c198: 10/25/89 Revision: February 29, 1996 CY7C198 Features Pin Configurations CerDIP Top View I/O1 A2 A3 A4 A5 A6 A7 I/O2 SENSE AMPS A1 ROW DECODER A0 1024 x 32 x 8 ARRAY A8 A 14 1 32 31 30 A13 A 12 NC V CC A7 2 28 VCC 2 27 WE A7 3 26 A4 A8 A6 A8 25 A3 5
|
Original
|
PDF
|
7c198:
CY7C198
CY7C198
600milwide
32lead
C1984
C1985
C1983 16
C1986
C1983
C198
|
SMD DIODE A6 t SOT-23
Abstract: BAS16 sot-23 BAS16 SMD DIODE bas16 tp-20ns BAS16 SMD SOT23
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
ISO/TS16949
BAS16
OT-23
C-120
BAS16
270304E
SMD DIODE A6 t SOT-23
BAS16 sot-23
SMD DIODE bas16
tp-20ns
BAS16 SMD SOT23
|
BAS16W
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16W SOT-323 PLASTIC PACKAGE 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking BAS16W = A6 High Switching Diode
|
Original
|
PDF
|
BAS16W
OT-323
C-120
BAS16W
Rev090206E
|
A6 sot-23
Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Text: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol
|
Original
|
PDF
|
BAS16
A6 sot-23
BAS16 sot-23
cd 5411
marking 855 sot 353
MARKING 358 sot-23
BAS16
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16W SOT-323 PLASTIC PACKAGE 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking BAS16W = A6 High Switching Diode
|
Original
|
PDF
|
BAS16W
OT-323
C-120
BAS16W
Rev090206E
|
smd a17
Abstract: No abstract text available
Text: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27
|
Original
|
PDF
|
MIL-STD-883
MT5C2561
MT5C2561C-55L883C
MT5C2561C-70L883C
5962-8872501LX
5962-8872502LX
5962-8872503LX
5962-8872504LX
5962-8854401LX
5962-8854402LX
smd a17
|
Untitled
Abstract: No abstract text available
Text: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27
|
Original
|
PDF
|
MT5C2561
MIL-STD-883
24-Pin
28-Pin
-8872503LX
5962-8872504LX
MT5C2561EC-35/883C
MT5C2561EC-45/883C
MT5C2561EC-55/883C
MT5C2561EC-70/883C
|
Untitled
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage
|
Original
|
PDF
|
BAS16
OT-23
OT-23
|
a9231
Abstract: LH531V00 32DIP 32-PIN lh531
Text: LH531V00 FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K × 8) Mask-Programmable ROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP OE1/OE1/DC 1 32 VCC A16 2 31 NC A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8
|
Original
|
PDF
|
LH531V00
32-PIN
LH531V00
32TSOP
32-pin,
600-mil
DIP032-P-0600)
a9231
32DIP
lh531
|
PA28F800
Abstract: IC51-0442-1536 CIC-44PS-44D-A6-YAM 44PIN DIP SOCKET
Text: CIC-44PS-44D-A6-YAM Rev 2 44-Lead PSOP to a 44-Pin DIP 9/97 (EXAMPLES) PSOP DEVICES: PIN CONFIGURATION: PA28F002BC PA28F200 BL / BV / BX / B5 PA28F400 BL / BV / BX / B5 PA28F800 BV / B5 SOCKET: BASE 44-Pin DIP PIN NAMES SOCKET 44-Lead PSOP 1 2 3 4 5 6 7
|
Original
|
PDF
|
CIC-44PS-44D-A6-YAM
44-Lead
44-Pin
PA28F002BC
PA28F200
PA28F400
PA28F800
IC51-0442-1536
CIC-44PS-44D-A6-YAM
44PIN DIP SOCKET
|
5962-3826705MXA
Abstract: 5962-3826703MXA AS28C010CW-15 5962-3826701MZA 5962-3826705MZA smd diode a7 AS28C010 5962-3826701 5962-3826707MXA
Text: EEPROM AS28C010 Austin Semiconductor, Inc. 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory 5 Volt, Byte Alterable 32-Pin CFP (F), 32-Pin CerDIP (CW) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss SMD 5962-38267
|
Original
|
PDF
|
AS28C010
32-Pin
MIL-PRF-38535
250ns
500uA
AS28C010CW-25
AS28C010CW-20
AS28C010CW-15
5962-3826705MXA
5962-3826703MXA
AS28C010CW-15
5962-3826701MZA
5962-3826705MZA
smd diode a7
AS28C010
5962-3826701
5962-3826707MXA
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
BAS16
OT-23
C-120
BAS16
270304E
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
BAS16
OT-23
C-120
BAS16
270304E
|
|
|
8M SMD
Abstract: BAS16 MARKING A6 sot23 DIODE SMD A6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
BAS16
OT-23
C-120
BAS16
270304E
8M SMD
MARKING A6 sot23
DIODE SMD A6
|
CIC-56SS-40D-A6-TI
Abstract: 40 pin DIP socket
Text: CIC-56SS-40D-A6-TI 56-Lead SSOP to a 40-Pin DIP 7/97 EXAMPLES SSOP DEVICES: DA28F016SA DA28F016SV PIN CONFIGURATION: (DT Extended Temp Range) SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $180.00 $162.00 $153.00 $135.00
|
Original
|
PDF
|
CIC-56SS-40D-A6-TI
56-Lead
40-Pin
DA28F016SA
DA28F016SV
CSP056-054
DA28F016SA/V)
CIC-56SS-40D-A6-TI
40 pin DIP socket
|
Untitled
Abstract: No abstract text available
Text: CIC-56SS-44D-A6-TI 56-Lead SSOP to a 44-Pin DIP 7/97 EXAMPLES SSOP DEVICES: DA28F016SA DA28F016SV PIN CONFIGURATION: (DT extended temp range) SOCKET: Texas Instruments CSP056-054 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $185.00 $166.50 $157.25 $138.75
|
Original
|
PDF
|
CIC-56SS-44D-A6-TI
56-Lead
44-Pin
DA28F016SA
DA28F016SV
40-Pin
CSP056-054
|
5962-8961420
Abstract: as27c010 5962-8961420QXA
Text: UVEPROM SMJ27C010A AS27C010A Austin Semiconductor, Inc. 1 MEG UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND
|
Original
|
PDF
|
MIL-STD-883
SMJ27C010A
AS27C010A
32-Pin
AS27C010A-12ECAM
AS27C010A-15ECAM
AS27C010A-20ECAM
5962-8961420QYA
5962-8961420
as27c010
5962-8961420QXA
|
LH532600
Abstract: LH532
Text: LH532600 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) CMOS 2M (256K × 8/128K × 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC 1 40 A8 A7 2 39 A9 A6 3 38
|
Original
|
PDF
|
LH532600
8/128K
40-PIN
D15/A-1
48TSOP
48-pin,
40-pin,
600-mil
LH532600
LH532
|
DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 1 A12 | A7 | 28 1 VCC 2 27 1 WE 3 26 1 NC A6 | 4 25 1 A6 A5 | 5 24 1 A9 A4 1 6 23 1 A11 • Low-power CMOS A3 1
|
OCR Scan
|
PDF
|
28-pin
DS1225Y
psi225ln
DS1225Y
|
Untitled
Abstract: No abstract text available
Text: ASÎÿ Aì 's‘f h •f 'p o p ‘ Si DRAM srvr . ' ' Ö83C , 1 * »RAM 256K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) FEATURES m |U 2 18 17 *A8 16 Q 4 15 A6 NC AZ 7
|
OCR Scan
|
PDF
|
MIL-STD-883
18-Pin
150mW
256-cycle
16-Pin
MIL-STD-883
MT4C1259
DS000015
|
Untitled
Abstract: No abstract text available
Text: CI BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BASI 6 = A6 _3.0_ 2.8 0.14 0.48 038 nr L 0.70 0.50 3 1 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.6 1.4 1.2 2.4
|
OCR Scan
|
PDF
|
BAS16
150mA
|
DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 • Data is automatically protected during power loss • Low-power CMOS VCC A12 | 2 27 1 WE A7 1 3 26 1 NC A6 1 4 25 1 A8 A5 1 5 « A9
|
OCR Scan
|
PDF
|
DS1225Y
28-pin
Vcc11.
DS1225Y
28-PIN
|
ram DS1225
Abstract: No abstract text available
Text: DS1225AB/AO DALLAS DS1225AB/AD SEMICONDUCTOR 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC | 1 A12 1 A7 1 A6 1 A5 1 A4 1 A3 | A2 1 A1 1 A0 1 DQ0 1 DQ1 1 DQ2 1 GND 1 • Data is automatically protected during power loss
|
OCR Scan
|
PDF
|
DS1225AB/AO
DS1225AB/AD
28-pin
DS1225AD)
DS1225AB)
28-pln
DS1225
DS1225A8/AD
DS1225AB/AD
ram DS1225
|
