W65C02
Abstract: PLD26 62c256 XC9572 A06 diode pld-40 PLD32 PLD33 SW_SPST PLD40
Text: 6 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW C6 C C7 C C8 C C9 C C10 C C11 C C12 C GND J8 D VCC_ARROW +5V 2 4 2 4 VCC_ARROW JP6 JP1 JUMPER2 JUMPER2 A[00:23] 1 3 1 3 A[00:23] D[0:7] VCC_ARROW Y1 EN OUT 8 10 11 13 14 15 16 17 18 19
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62C256
W65C02DB
W65C02
PLD26
62c256
XC9572
A06 diode
pld-40
PLD32
PLD33
SW_SPST
PLD40
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MACH3 cpld from AMD
Abstract: MACH3 cpld mach schematic B0337 matrix circuit VHDL code mach3 AMD A-18 MACH4 cpld amd ABEL-HDL Design Manual mach211sp
Text: MACH Device Kit User Manual 096-0197 June 1996 096-0197-001 Synario Design Automation, a division of Data I/O, has made every attempt to ensure that the information in this document is accurate and complete. Data I/O assumes no liability for errors, or for any incidental, consequential, indirect or special damages, including, without limitation,
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Untitled
Abstract: No abstract text available
Text: LMH6517 www.ti.com SNOSB19K – NOVEMBER 2008 – REVISED MARCH 2013 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain Check for Samples: LMH6517 FEATURES DESCRIPTION • • • • • • • • • The LMH6517 contains two high performance,
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LMH6517
SNOSB19K
LMH6517
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Untitled
Abstract: No abstract text available
Text: LMH6517 www.ti.com SNOSB19J – NOVEMBER 2008 – REVISED NOVEMBER 2011 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain Check for Samples: LMH6517 FEATURES DESCRIPTION • • • • • • • • • The LMH6517 contains two high performance,
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LMH6517
SNOSB19J
LMH6517
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Untitled
Abstract: No abstract text available
Text: LMH6517 www.ti.com SNOSB19K – NOVEMBER 2008 – REVISED MARCH 2013 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain Check for Samples: LMH6517 FEATURES DESCRIPTION • • • • • • • • • The LMH6517 contains two high performance,
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LMH6517
SNOSB19K
LMH6517
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Untitled
Abstract: No abstract text available
Text: LMH6517 www.ti.com SNOSB19K – NOVEMBER 2008 – REVISED MARCH 2013 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain Check for Samples: LMH6517 FEATURES DESCRIPTION • • • • • • • • • The LMH6517 contains two high performance,
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LMH6517
SNOSB19K
LMH6517
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Untitled
Abstract: No abstract text available
Text: LMH6521 www.ti.com SNOSB47C – MAY 2011 – REVISED SEPTEMBER 2011 High Performance Dual DVGA Check for Samples: LMH6521 FEATURES 1 • • • • • • • • • 234 OIP3 of 48.5 dBm at 200 MHz Maximum voltage gain of 26 dB Gain range of 31.5 dB with 0.5dB step size
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LMH6521
SNOSB47C
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IN402
Abstract: L6521SQ
Text: LMH6521 www.ti.com SNOSB47D – MAY 2011 – REVISED MARCH 2013 High Performance Dual DVGA Check for Samples: LMH6521 FEATURES DESCRIPTION • • • • • • • • • The LMH6521 contains two high performance, digitally controlled variable gain amplifiers DVGA .
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LMH6521
SNOSB47D
LMH6521
IN402
L6521SQ
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Untitled
Abstract: No abstract text available
Text: LMH6521 www.ti.com SNOSB47D – MAY 2011 – REVISED MARCH 2013 High Performance Dual DVGA Check for Samples: LMH6521 FEATURES DESCRIPTION • • • • • • • • • The LMH6521 contains two high performance, digitally controlled variable gain amplifiers DVGA .
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LMH6521
SNOSB47D
LMH6521
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Untitled
Abstract: No abstract text available
Text: LMH6521 www.ti.com SNOSB47D – MAY 2011 – REVISED MARCH 2013 High Performance Dual DVGA Check for Samples: LMH6521 FEATURES DESCRIPTION • • • • • • • • • The LMH6521 contains two high performance, digitally controlled variable gain amplifiers DVGA .
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LMH6521
SNOSB47D
LMH6521
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Keil uVision
Abstract: 1995 philips vmi connector p80c652 CCIR601 TVP5020 TVP560000EVM TVP56000EVM P80C652-code Schematic/P80C652
Text: TVP5020 NTSC/PAL Video Decoder Programming for the I 2C Host Interface Application Report March 1999 Mixed Signal Products SLAA052 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue
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TVP5020
SLAA052
Keil uVision
1995 philips vmi connector
p80c652
CCIR601
TVP560000EVM
TVP56000EVM
P80C652-code
Schematic/P80C652
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QS3B2491
Abstract: QS3B491 a5 s0b
Text: QS3B491, QS3B2491 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS Clocked 4 Port x 9-Bit CrossbarSwitch Q QUALITY SEMICONDUCTOR, INC. QS3B491 QS3B2491 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Fully configurable Switch Matrix • Sub-nanosecond Propagation Delay
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QS3B491,
QS3B2491
QS3B491
QS3B2491
64-pin
QS3B491
MDSL-00251-01
a5 s0b
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QS3B2491
Abstract: QS3B491 a5 s0b 3b49
Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS CLOCKED 4 PORT X 9-BIT CROSSBAR SWITCH QS3B491 QS3B2491 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Fully configurable Switch Matrix • Sub-nanosecond Propagation Delay • User-friendly Individual Port Control
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QS3B491
QS3B2491
64-pin
QS3B491
QS3B2491
a5 s0b
3b49
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Untitled
Abstract: No abstract text available
Text: cP March 1997 Revision 2.1 FUJI' DATA SHEET - * S0B2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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V6482-
16MByte
SOB2UV6482-
16-megabtye
144-pin,
B81117822A-
16MByte
MP-SDRAMM-DS-20370-3/97
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Untitled
Abstract: No abstract text available
Text: cP IITSU December 1997 Revision 2.0 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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S0B8UL6484-
64MByte
SOB8UL6484-
64-megabyte
144-pin,
B81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP IITSU December 1997 Revision 1.0 data sheet S0B8U V6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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V6484-
64MByte
SOB8UV6484-
64-megabtye
144-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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HY51V64404ATC
Abstract: HY51V65404A
Text: -HYUNDAI - » HY51 V64404A,HY51 V65404A . S 16Mx4. Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Extended Data Out mode CMOS DRAMs, Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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V64404A
V65404A
16Mx4.
128ms
cycle/64ms)
HY51V64404ATC
HY51V65404A
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Untitled
Abstract: No abstract text available
Text: cP IITSU November 1997 Revision 1.1 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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S0B8UL6484-
64MByte
SOB8UL6484-
64-megabyte
144-pin,
B81164842A-
84Mhz
100Mhz
125Mhz
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Untitled
Abstract: No abstract text available
Text: D • SôbûMSb OOOED^ MÔG « M M H S _^ V C , ' Z January 1991 MATRA M H S HM 65788 HI-REL DATA SHEET 16 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS FAST ACCESS TIME : 25/35 /45/S5 ns
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/45/S5
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MSC23CV132SL-60BS8
Abstract: MSC23CV132SL-70BS8 MSC23CV132SL-80BS8
Text: O K I Semiconductor MSC23CV132SL-xxBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV132SL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages
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MSC23CV132SL-xxBS8
576-Word
32-Bit
MSC23CV132SL-xxBS8
72-pin
MSC23CV132SL-60BS8
MSC23CV132SL-70BS8
MSC23CV132SL-80BS8
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lg 6154
Abstract: amd k10 09485-012B
Text: a Am29C983/Am29C983A Advanced Micro Devices 9-Bit x 4-Port Multiple Bus Exchange DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Four bidirectional I/O ports with latches Glitch-free outputs during power-up/down - Replaces several bidirectional latches and
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Am29C983/Am29C983A
29C983
9485-007A
09485-008B
09485-009B
9485-011A
09485-012B
lg 6154
amd k10
09485-012B
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Untitled
Abstract: No abstract text available
Text: •H Y U N D A I HY234100 Series 512KX 8-b¡t/256KX 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234100 is a 4Mbit mask-programmable ROM organized either as 524,288 x 8bit Byte mode or as 262,144 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS process
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HY234100
512KX
t/256KX
16-bit
16bit
120ns
600mil
525mil
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 DATA SHEET FUJI - ' SOB2UV6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
16-megabtye
144-pin,
MB81117822A-
16puts
200mV.
37MT7Sb
001fi757
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Untitled
Abstract: No abstract text available
Text: January 1997 Revision 2.0 D A TA SH EET - SOB2UV6482- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SOB2llV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
SOB2llV6482-
16-megabtye
144-pin,
MB81117822A-
200mV.
V6482-
144-pin
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