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    A44 TRANSISTOR Search Results

    A44 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A44 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BR A44

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L 100mA BR A44

    BR A44

    Abstract: TRANSISTOR A44 To92 transistor
    Text: A44 A44 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 30MHz BR A44 TRANSISTOR A44 To92 transistor

    TRANSISTOR A44

    Abstract: BR A44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage


    Original     		PDF 100mA 30MHz TRANSISTOR A44 BR A44

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage


    Original     		PDF 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO


    Original     		PDF 30MHz

    Untitled

    Abstract: No abstract text available
    Text: A44 YOUDA TRANSISTOR SI NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 100mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: A44 YOUDA TRANSISTOR Si NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF 300mA

    BD5431

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5431EFS 1 2) 3) 4) 5) 6) Differential Analog / PWM inputs High efficiency and low heat generation eliminates external heat-sinks


    Original     		PDF BD5431EFS HTSSOP-A44 R1120A BD5431

    TRANSISTOR A44

    Abstract: BR A44 datasheet of ic 555 IC 555 A44 npn
    Text: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage * High Reliability 1 2 3 1 2 3 1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF 01-Jun-2002 270TYP 050TYP TRANSISTOR A44 BR A44 datasheet of ic 555 IC 555 A44 npn

    IC 555

    Abstract: datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE （Tamb=25℃） Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage


    Original     		PDF O--92 30MHz 270TYP 050TYP IC 555 datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44

    Untitled

    Abstract: No abstract text available
    Text: Transistors DIP Type NPN Transistors A44 Features 1. OUT High voltage 1 Emitter 2. GND 2 Base 3. IN 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage


    Original     		PDF 100uA, 100mA 30MHZ

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage


    Original     		PDF 30MHz

    A44 npn

    Abstract: No abstract text available
    Text: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC


    Original     		PDF 100mA 30MHz A44 npn

    Untitled

    Abstract: No abstract text available
    Text: 1/7 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: BD5427EFS PACKAGE: FEATURES: HTSSOP-A44 1 2) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply is


    Original     		PDF BD5427EFS HTSSOPA44

    Industrial Drives

    Abstract: No abstract text available
    Text: V23990-P630-A44-PM flow 90PIM 1 1200V/25A Features flow 90PIM 1 ● Trench Fieldstop Technology IGBT4 for low saturation loss ● Supports design with 90° mounting angle between heatsink and PCB ● Clip-in PCB mounting ● Clip or screw on heatsink mounting


    Original     		PDF V23990-P630-A44-PM 90PIM 200V/25A Industrial Drives

    Untitled

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5424EFS 1 2) 3) 4) 5) 6) 7) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply


    Original     		PDF BD5424EFS HTSSOPA44

    SGA-4486

    Abstract: A44 marking amplifier pin configuration transistor A44 TRANSISTOR A44 "Bipolar Transistor" A44
    Text: Product Description Stanford Microdevices’ SGA-4486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


    Original     		PDF SGA-4486 SGA-4486 EDS-100643 A44 marking amplifier pin configuration transistor A44 TRANSISTOR A44 "Bipolar Transistor" A44

    4463 B

    Abstract: TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier SGA-4463 pin configuration transistor A44 ZL 15 a
    Text: Product Description Stanford Microdevices’ SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-4463 DC-3500 SGA-4463 EDS-100644 4463 B TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier pin configuration transistor A44 ZL 15 a

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    BDT61

    Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
    Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.


    OCR Scan     		PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON

    Untitled

    Abstract: No abstract text available
    Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA

    A45A

    Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
    Text: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8


    OCR Scan     		PDF cen-a44 cen-a45 cen-a45a to-92 CEN-A44, EN-A45 CEN-A45A MPS-A44, MPS-A45 100mA A45A MPS-A44 TRANSISTOR A44 TRANSISTOR a45 MPSA44

    TRANSISTOR A44

    Abstract: BR A44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon MPSA44 M otorola P referred Device EMITTER 1 MAXIM UM RATINGS 3 Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 400 Vdc C ollector-B ase Voltage VCBO 500 Vdc E m itter-B ase Voltage


    OCR Scan     		PDF MPSA44 O-226AA) TRANSISTOR A44 BR A44